Compound imaging metrology targets
    21.
    发明授权

    公开(公告)号:US10527951B2

    公开(公告)日:2020-01-07

    申请号:US15057723

    申请日:2016-03-01

    Abstract: Imaging metrology targets and methods are provided, which combine one-dimensional (1D) elements designed to provide 1D imaging metrology signals along at least two measurement directions and two-dimensional (2D) elements designed to provide at least one 2D imaging metrology overlay signal. The target area of the 1D elements may enclose the 2D elements or the target areas of the 1D and 2D elements may be partially or fully congruent. The compound targets are small, possibly multilayered, and may be designed to be process compatible (e.g., by segmentation of the elements, interspaces between elements and element backgrounds) and possibly be produced in die. Two dimensional elements may be designed to be periodic to provide additional one dimensional metrology signals.

    VERIFICATION METROLOGY TARGETS AND THEIR DESIGN
    24.
    发明申请
    VERIFICATION METROLOGY TARGETS AND THEIR DESIGN 审中-公开
    验证计量目标及其设计

    公开(公告)号:US20170060001A1

    公开(公告)日:2017-03-02

    申请号:US15351995

    申请日:2016-11-15

    Abstract: Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

    Abstract translation: 提供计量目标设计方法和验证目标。 方法包括使用与设计的计量目标相关的OCD数据作为目标模型与晶片上的相应实际目标之间的差异的估计,以及调整度量目标设计模型以补偿估计的差异。 专用的验证目标可以包括覆盖目标特征,并且被尺寸优化以由OCD传感器测量,以便能够补偿由生产过程变化导致的不准确性。 方法还包括修改制造商和计量供应商之间的工作流程,从而提供更高保真度量的目标设计模型,并最终提高计量测量的精度。

    REDUCING ALGORITHMIC INACCURACY IN SCATTEROMETRY OVERLAY METROLOGY
    25.
    发明申请
    REDUCING ALGORITHMIC INACCURACY IN SCATTEROMETRY OVERLAY METROLOGY 有权
    降低算术计算中的算术不准确度

    公开(公告)号:US20150233705A1

    公开(公告)日:2015-08-20

    申请号:US14184295

    申请日:2014-02-19

    CPC classification number: G01B11/14 G01B11/2441 G03F7/70633

    Abstract: Methods and systems for minimizing of algorithmic inaccuracy in scatterometry overlay (SCOL) metrology are provided. SCOL targets are designed to limit the number of oscillation frequencies in a functional dependency of a resulting SCOL signal on the offset and to reduce the effect of higher mode oscillation frequencies. The targets are segmented in a way that prevents constructive interference of high modes with significant amplitudes, and thus avoids the inaccuracy introduced by such terms into the SCOL signal. Computational methods remove residual errors in a semi-empirical iterative process of compensating for the residual errors algorithmically or through changes in target design.

    Abstract translation: 提供了用于最小化散点映射覆盖(SCOL)计量学中算法不准确性的方法和系统。 SCOL目标被设计为将所得到的SCOL信号的功能依赖性的振荡频率的数量限制在偏移上并且降低更高模式振荡频率的影响。 目标被分段,以防止具有显着幅度的高模式的建构性干扰,从而避免了由这些术语引入到SCOL信号中的不准确性。 计算方法在半经验迭代过程中,通过算法或通过目标设计的变化来补偿残差,从而消除残差。

    Thin overlay mark for imaging based metrology
    26.
    发明授权
    Thin overlay mark for imaging based metrology 失效
    用于基于成像的计量学的薄叠加标记

    公开(公告)号:US08741668B1

    公开(公告)日:2014-06-03

    申请号:US13964789

    申请日:2013-08-12

    Inventor: Mark Ghinovker

    CPC classification number: G03F7/70683 G03F7/70633

    Abstract: A thin overlay structure for use in imaging based metrology is disclosed. The thin overlay structure may include a first structure and second structure, the first and second structures designed to have a common center of symmetry, both structures being invariant to a 180 degree rotation about the common center of symmetry, wherein a mark region defining the extent of the structures is characterized by a first direction and a second direction orthogonal to the first direction, a length of the mark region along the first direction being greater than a length of the mark region along the second direction.

    Abstract translation: 公开了一种用于基于成像的计量学的薄覆盖结构。 薄覆盖结构可以包括第一结构和第二结构,第一和第二结构被设计成具有共同的对称中心,两个结构不变地围绕公共对称中心旋转180度旋转,其中限定范围的标记区域 所述结构的特征在于与所述第一方向正交的第一方向和第二方向,所述标记区域沿着所述第一方向的长度大于所述标记区域沿所述第二方向的长度。

    Apodization for Pupil Imaging Scatterometry
    27.
    发明申请
    Apodization for Pupil Imaging Scatterometry 有权
    瞳孔影像散斑测量法

    公开(公告)号:US20140146322A1

    公开(公告)日:2014-05-29

    申请号:US13936529

    申请日:2013-07-08

    Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.

    Abstract translation: 本公开涉及用于瞳孔成像散射测量的各种变迹方案。 在一些实施例中,该系统包括设置在照明路径的光瞳平面内的变迹器。 在一些实施例中,系统还包括照明扫描器,其构造成用至少一部分变迹照明来扫描样品的表面。 在一些实施例中,系统包括配置成提供四极照明功能的变迹瞳孔。 在一些实施例中,系统还包括变迹集合区域停止。 可以组合这里描述的各种实施例以实现某些优点。

    Target and process sensitivity analysis to requirements

    公开(公告)号:US10726169B2

    公开(公告)日:2020-07-28

    申请号:US14919954

    申请日:2015-10-22

    Abstract: Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.

    Utilizing overlay misregistration error estimations in imaging overlay metrology

    公开(公告)号:US10565697B2

    公开(公告)日:2020-02-18

    申请号:US15739381

    申请日:2017-10-22

    Abstract: Systems and methods are provided, which calculate overlay misregistration error estimations from analyzed measurements of each ROI (region of interest) in at least one metrology imaging target, and incorporate the calculated overlay misregistration error estimations in a corresponding estimation of overlay misregistration. Disclosed embodiments provide a graduated and weighted analysis of target quality which may be integrated in a continuous manner into the metrology measurement processes, and moreover evaluates target quality in terms of overlay misregistration, which forms a common basis for evaluation of errors from different sources, such as characteristics of production steps, measurement parameters and target characteristics. Such common basis then enables any of combining various error sources to give a single number associated with measurement fidelity, analyzing various errors at wafer, lot and process levels, and/or to trade-off the resulting accuracy for throughput by reducing the number of measurements, in a controlled manner.

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