Abstract:
Imaging metrology targets and methods are provided, which combine one-dimensional (1D) elements designed to provide 1D imaging metrology signals along at least two measurement directions and two-dimensional (2D) elements designed to provide at least one 2D imaging metrology overlay signal. The target area of the 1D elements may enclose the 2D elements or the target areas of the 1D and 2D elements may be partially or fully congruent. The compound targets are small, possibly multilayered, and may be designed to be process compatible (e.g., by segmentation of the elements, interspaces between elements and element backgrounds) and possibly be produced in die. Two dimensional elements may be designed to be periodic to provide additional one dimensional metrology signals.
Abstract:
A system for providing illumination to a measurement head for optical metrology is configured to combine illumination beams from a plurality of illumination sources to deliver illumination at one or more selected wavelengths to the measurement head. The intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. Illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.
Abstract:
Method, metrology modules and RCA tool are provided, which use the behavior of resonance region(s) in measurement landscapes to evaluate and characterize process variation with respect to symmetric and asymmetric factors, and provide root cause analysis of the process variation with respect to process steps. Simulations of modeled stacks with different layer thicknesses and process variation factors may be used to enhance the analysis and provide improved target designs, improved algorithms and correctables for metrology measurements. Specific targets that exhibit sensitive resonance regions may be utilize to enhance the evaluation of process variation.
Abstract:
Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.
Abstract:
Methods and systems for minimizing of algorithmic inaccuracy in scatterometry overlay (SCOL) metrology are provided. SCOL targets are designed to limit the number of oscillation frequencies in a functional dependency of a resulting SCOL signal on the offset and to reduce the effect of higher mode oscillation frequencies. The targets are segmented in a way that prevents constructive interference of high modes with significant amplitudes, and thus avoids the inaccuracy introduced by such terms into the SCOL signal. Computational methods remove residual errors in a semi-empirical iterative process of compensating for the residual errors algorithmically or through changes in target design.
Abstract:
A thin overlay structure for use in imaging based metrology is disclosed. The thin overlay structure may include a first structure and second structure, the first and second structures designed to have a common center of symmetry, both structures being invariant to a 180 degree rotation about the common center of symmetry, wherein a mark region defining the extent of the structures is characterized by a first direction and a second direction orthogonal to the first direction, a length of the mark region along the first direction being greater than a length of the mark region along the second direction.
Abstract:
The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.
Abstract:
Methods and systems are provided, which identify specified metrology target abnormalities using selected metrics and classify the identified target abnormalities geometrically to link them to corresponding sources of error. Identification may be carried out by deriving target signals such as kernels from specified regions of interest (ROIs) from corresponding targets on a wafer, calculating the metrics from the target signals using respective functions and analyzing the metrics to characterize the targets.
Abstract:
Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.
Abstract:
Systems and methods are provided, which calculate overlay misregistration error estimations from analyzed measurements of each ROI (region of interest) in at least one metrology imaging target, and incorporate the calculated overlay misregistration error estimations in a corresponding estimation of overlay misregistration. Disclosed embodiments provide a graduated and weighted analysis of target quality which may be integrated in a continuous manner into the metrology measurement processes, and moreover evaluates target quality in terms of overlay misregistration, which forms a common basis for evaluation of errors from different sources, such as characteristics of production steps, measurement parameters and target characteristics. Such common basis then enables any of combining various error sources to give a single number associated with measurement fidelity, analyzing various errors at wafer, lot and process levels, and/or to trade-off the resulting accuracy for throughput by reducing the number of measurements, in a controlled manner.