摘要:
An electrostatic chuck comprising an insulating base 6, a plurality of conductive aluminum thin films 4a, 4b deposited on the surface of the base, and alumite films 2a, 2b formed by anodizing the surfaces of the conductive thin films 4a, 4b, wherein the conductive thin films 4a, 4b are each provided with a DC voltage of a different polarity so that a surface chucking a wafer 7 is electrostatically bipolar.
摘要:
A plasma processing apparatus having an electrostatic chucking electrode that allows temperature control of a semiconductor wafer during etching process with high efficiency comprises: a holder stage comprising an electrode block S having a dielectric film 4 on the surface thereof and a coolant flow passage 6 therein, in which temperature control is performed while holding a semiconductor wafer W on the dielectric film on the surface of the electrode block; and a cooling cycle 50 including a compressor 52, a condenser 55, an expansion valve 53, a heat exchanger 54 having a heater built therein, and an evaporator, wherein the temperature control of the electrode block S is performed by using a direct-expansion-type temperature controller in which the electrode block S is used as the evaporator of the cooling cycle, and the coolant is directly circulated and expanded inside the electrode block.
摘要:
A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
摘要:
The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.
摘要:
A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.
摘要:
A lithium ion secondary battery comprises a case; a positive electrode foil having a current collector foil on which a positive electrode material is coated; an negative electrode film having a current collector film on which an negative electrode material is coated; a separator sandwiched between the positive electrode film and the negative electrode film, the films and the separator being arranged in multiple layers to form a group of electrodes enclosed in the case, a positive collector disc plate connected to the positive electrode side of the group of the electrodes, and an negative collector disc plate connected to the negative electrode side of the group of the electrodes. Each of the current collector foils has a non-coated portion extended along one side of the foils, a part or the entire of the non-coated portion being exposed from a side of the separator. At least one of the collector disc plate is welded to the side of the exposed non-coated portion of the group of the electrodes. The periphery of the collector disc plate has an annular portion, which is bent towards the group of electrodes.
摘要:
Disclosed is a brake control apparatus which includes a brake booster for augmenting deceleration, and which addresses the problem in conventional brake control apparatuses that deceleration and pedal reaction force depend on driver brake pedal input, and thus the pedal response and the ride comfort from the feeling of deceleration are affected by the manner in which the brake pedal is actuated by the driver. The brake control apparatus comprises a pedal reaction force generation unit for generating a pedal reaction force on the brake pedal, and a brake control unit for controlling the brake force in such a way as to suppress driver brake input fluctuations, wherein the pedal reaction force generation unit suppresses pedal reaction force fluctuations in accordance with specific deceleration and pedal reaction force characteristics. The brake control apparatus further comprises a calculation unit for calculating a target deceleration on the basis of lateral acceleration information in the left-to-right direction of the vehicle, wherein the brake control unit suppresses the brake force in such a way that the target deceleration is produced and, when the amount by which the brake pedal is depressed reaches a specific amount in respect of the target deceleration, the pedal reaction force generated by the pedal reaction force generation unit may be increased.
摘要:
A lithium-ion secondary battery where a current collecting member and a foil are joined to each other securely while damage of the foil is suppressed is provided. The lithium-ion secondary battery is provided with a winding group obtained by winding a positive electrode plate and a negative electrode plate via a separator. An end portion of a positive electrode mixture non-application portion and an end portion of a negative electrode mixture non-application portion project at an upper portion and a lower portion of the winding group, respectively. Current collecting disks 7 are disposed so as to face both end faces of the winding group, respectively. The current collecting disk 7 has projecting ridge portions 8 on a face thereof opposite to the winding group and flat face portions facing the winding group at positions corresponding to the projecting ridge portions 8. The projecting ridge portions 8 are formed radially. The end portion of the positive electrode mixture non-application portion and the end portion of the negative electrode mixture non-application portion are caused to abut on the flat face portions of the current collecting disks 7 and joining is performed by irradiating the projecting ridge portions 8 with laser beam. The flat face portions of the current collecting disks 7 abut on the end portion of the positive electrode mixture non-application portion and the end portion of the negative electrode mixture non-application portion approximately evenly.
摘要:
In a secondary battery, for providing a structure which can enable a welding operation even when a gap is formed between a current collecting plate and a winding assembly, recessed portions are formed in a positive current collecting plate. The recessed portions are disposed opposite to the winding assembly. A laser beam is irradiated to welding protrusions located between the recessed portions to melt the welding protrusions. Here, since the end surface of a positive electrode foil is uneven in height, the positive electrode foil does not contact the positive current collecting plate necessarily. The welding operation is performed by heating, melting, and dropping the welding protrusions by the use of a YAG laser under the welding condition of a laser power of 900 W and a welding speed 2 m/min.
摘要:
A plasma processing apparatus having an electrostatic chucking electrode that allows temperature control of a semiconductor wafer during etching process with high efficiency comprises: a holder stage comprising an electrode block S having a dielectric film 4 on the surface thereof and a coolant flow passage 6 therein, in which temperature control is performed while holding a semiconductor wafer W on the dielectric film on the surface of the electrode block; and a cooling cycle 50 including a compressor 52, a condenser 55, an expansion valve 53, a heat exchanger 54 having a heater built therein, and an evaporator, wherein the temperature control of the electrode block S is performed by using a direct-expansion-type temperature controller in which the electrode block S is used as the evaporator of the cooling cycle, and the coolant is directly circulated and expanded inside the electrode block.