Information processing apparatus and processor and control method
    21.
    发明申请
    Information processing apparatus and processor and control method 失效
    信息处理装置及处理器及控制方法

    公开(公告)号:US20070118773A1

    公开(公告)日:2007-05-24

    申请号:US11404432

    申请日:2006-04-14

    申请人: Kazuhiko Tsuji

    发明人: Kazuhiko Tsuji

    IPC分类号: G06F1/00

    摘要: According to one embodiment, an information processing apparatus includes a main body in which a battery is mountable and a processor provided in the main body and including a first core and a second core. The information processing apparatus further comprises a power supply controller that executes a process for setting the processor in one of a multi-core mode in which the first core and the second core are operable and a single-core mode in which one of the first core and the second core is operable, in accordance with rating information indicative of a performance of the battery mounted in the main body, which is stored in the battery.

    摘要翻译: 根据一个实施例,信息处理设备包括其中可安装电池的主体和设置在主体中并包括第一芯和第二芯的处理器。 信息处理装置还包括电源控制器,该电源控制器执行用于将处理器设置为第一核心和第二核心可操作的多核心模式之一的处理,以及单核模式,其中第一核心 并且根据存储在电池中的指示安装在主体中的电池的性能的等级信息,第二核可操作。

    Assembly apparatus for assembling sub-assembly of swash plate type
fluidic apparatus
    22.
    发明授权
    Assembly apparatus for assembling sub-assembly of swash plate type fluidic apparatus 失效
    用于组装旋转斜盘式流体装置的组件的组装装置

    公开(公告)号:US5369878A

    公开(公告)日:1994-12-06

    申请号:US64487

    申请日:1993-05-19

    摘要: An assembly apparatus for assembling a sub-assembly of a swash plate type fluidic apparatus includes a holder adapted to hold an end of a driving shaft, a horizontal rail, a curved rail connected with the horizontal rail, a plurality of carriers adapted to seat pistons and a pair of hemispherical shoes as well and to move on the horizontal rail and the curved rail, transporting means adapted to move the carriers on the horizontal rail and the curved rail, a first orienting member adapted to positioned the shoes in spherical seats of the pistons with its surfaces, and a second orienting member disposed connectably with the first orienting member and including surfaces which incline gradually to an inclination angle of a swash plate. The carriers are moved continuously on the horizontal rail and the curved rail by the transporting means. When all of the carriers are placed on the curved rail, the pistons are positioned around an outer peripheral area of the swash plate in a predetermined phaseal relationship, and simultaneously the shoes are guided smoothly between the swash plate and spherical seats of the pistons.

    摘要翻译: 用于组装斜板式流体装置的子组件的组装装置包括:保持器,其适于保持驱动轴的端部,水平轨道,与水平轨道连接的弯曲轨道,多个载体,其适于将活塞 以及一对半球形鞋,并且在水平轨道和弯曲轨道上移动,适于在水平轨道和弯曲轨道上移动托架的传送装置,适于将鞋定位在球形座中的第一定向构件 具有其表面的活塞和与第一定向构件连接地设置并包括逐渐倾斜到斜盘倾斜角度的表面的第二定向构件。 载体通过输送装置在水平轨道和弯曲轨道上连续移动。 当所有载体都放置在弯曲轨道上时,活塞以预定的相位关系定位在旋转斜盘的外周区域周围,并且同时在滑板和活塞的球形座之间平滑地引导滑靴。

    CMOS integrated circuit
    23.
    发明授权
    CMOS integrated circuit 失效
    CMOS集成电路

    公开(公告)号:US4672584A

    公开(公告)日:1987-06-09

    申请号:US691701

    申请日:1985-01-15

    CPC分类号: H01L27/0921

    摘要: A CMOS integrated circuit includes a P-channel type MOS transistor which is formed on an N-type silicon substrate, an N-channel type MOS transistor which is formed on a P well formed in the substrate, and parasitic bipolar transistors which are electrically connected to each other to form a kind of thyristor structure. A power supply voltage is applied to a source electrode of the P-channel type MOS transistor through a part of the substrate which presents a resistance. The resistance is electrically connected to the parasitic bipolar transistor of the thyristor structure to thereby prevent the occurrence of a latch-up phenomenon in which a large current continuously flows through the parasitic bipolar transistors and may destroy the CMOS integrated circuit. Because of the prevention of the latch-up phenomenon, the CMOS integrated circuit is always maintained in good condition.

    摘要翻译: CMOS集成电路包括形成在N型硅衬底上的P沟道型MOS晶体管,形成在形成于衬底中的P阱上的N沟道型MOS晶体管和电连接的寄生双极晶体管 彼此形成一种晶闸管结构。 通过存在电阻的基板的一部分,将电源电压施加到P沟道型MOS晶体管的源电极。 电阻电连接到晶闸管结构的寄生双极晶体管,从而防止大电流连续流过寄生双极晶体管的闩锁现象的发生,并可能破坏CMOS集成电路。 由于防止闭锁现象,CMOS集成电路始终保持良好状态。

    Processing cell of automatic machining system and automatic honing system
    25.
    发明授权
    Processing cell of automatic machining system and automatic honing system 失效
    自动加工系统加工单元和自动珩磨系统

    公开(公告)号:US07726004B2

    公开(公告)日:2010-06-01

    申请号:US12023947

    申请日:2008-01-31

    IPC分类号: B23B39/16 B23B39/04

    摘要: A processing cell of automatic machining system configured in that it is easy to decide or change the number of steps and to design, and to reduce the installation cost. The control unit of the processing cell comprises an operation data storing means for storing every position necessary data for operation at each position of the processing cell installed in the machining section of the automatic machining system, and a position designating means for designating the after-installation position. The control unit reads necessary data for operation out of the operation data storing means in accordance with the position designated by the position designating means. Thus, the operation of each cell can be switched in accordance with the position, and the processing cells can be easily changed in position and adjusted in quantity.

    摘要翻译: 一种自动加工系统的处理单元,其配置为易于决定或更改步骤数量和设计,并降低安装成本。 处理单元的控制单元包括操作数据存储装置,用于存储安装在自动加工系统的加工部分中的处理单元的每个位置处的每个位置所需的数据,以及用于指定安装后的位置指定装置 位置。 控制单元根据由位置指定装置指定的位置从操作数据存储装置读出操作的必要数据。 因此,可以根据位置来切换各单元的动作,能够容易地改变处理单元的位置并进行调整。

    Information processing apparatus and power consumption method
    26.
    发明申请
    Information processing apparatus and power consumption method 审中-公开
    信息处理设备和功耗方法

    公开(公告)号:US20070204181A1

    公开(公告)日:2007-08-30

    申请号:US11710814

    申请日:2007-02-26

    申请人: Kazuhiko Tsuji

    发明人: Kazuhiko Tsuji

    IPC分类号: G06F1/32

    CPC分类号: G06F1/3203

    摘要: According to one embodiment, there is provided an information processing apparatus including a control portion to change the operation mode to the first power consumption mode when a remaining capacity of the battery is reduced to a first capacity if the action of changing the operation mode to the first power consumption mode is set, and change the operation mode to the second power consumption mode when the remaining capacity of the battery is reduced to a second capacity lower than the first capacity if the action of changing the operation mode to the second power consumption mode is set.

    摘要翻译: 根据一个实施例,提供了一种信息处理设备,包括:当将电池的剩余容量降低到第一容量时,将操作模式改变为第一功耗模式的控制部分,如果将​​操作模式改变为 如果将操作模式改变为第二功耗模式的动作将电池的剩余容量减小到低于第一容量的第二容量,则将第一功耗模式设定为第二功耗模式 被设置。

    High density integrated semiconductor device and manufacturing method
thereof
    27.
    发明授权
    High density integrated semiconductor device and manufacturing method thereof 失效
    高密度集成半导体器件及其制造方法

    公开(公告)号:US5565368A

    公开(公告)日:1996-10-15

    申请号:US370289

    申请日:1995-01-09

    申请人: Kazuhiko Tsuji

    发明人: Kazuhiko Tsuji

    IPC分类号: H01L27/092 H01L21/265

    摘要: In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region and a drain region may also be arranged on the same plane and the latter MOS device Is arranged to the gate electrode. This the of device may be constructed as a CMOS type device.In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

    摘要翻译: 在MOS型半导体器件中,MOS器件的源极区域,沟道区域和漏极区域布置在同一平面上,而栅极电极也布置在与沟道区域相邻的同一平面上。 源极区域,沟道区域和漏极区域的另一组也可以布置在同一平面上,并且将后一个MOS器件布置到栅电极。 该器件可以构造为CMOS型器件。 在另一种类型的半导体器件中,源极,沟道和漏极区域的上述类型平面布置经由绝缘体层层叠,同时垂直地设置栅电极以与两个沟道区相邻。

    Silicon on insulator field effect transistors
    28.
    发明授权
    Silicon on insulator field effect transistors 失效
    硅绝缘体场效应晶体管

    公开(公告)号:US5541432A

    公开(公告)日:1996-07-30

    申请号:US345438

    申请日:1994-11-21

    申请人: Kazuhiko Tsuji

    发明人: Kazuhiko Tsuji

    摘要: In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region, and a drain region may also be arranged on the same plane, and the latter MOS device is arranged adjacent to the gate electrode. This type of device may be constructed as a CMOS type device. In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel, and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

    摘要翻译: 在MOS型半导体器件中,MOS器件的源极区域,沟道区域和漏极区域布置在同一平面上,而栅极电极也布置在与沟道区域相邻的同一平面上。 源极区域,沟道区域和漏极区域的另一组也可以布置在同一平面上,并且后面的MOS器件被布置为与栅电极相邻。 这种类型的器件可以被构造为CMOS型器件。 在另一种类型的半导体器件中,源极,沟道和漏极区域的上述类型平面布置经由绝缘体层层叠,同时垂直地设置栅电极以与两个沟道区相邻。

    Method of manufacturing a high density semiconductor device
    29.
    发明授权
    Method of manufacturing a high density semiconductor device 失效
    制造高密度半导体器件的方法

    公开(公告)号:US5409850A

    公开(公告)日:1995-04-25

    申请号:US207633

    申请日:1994-03-09

    申请人: Kazuhiko Tsuji

    发明人: Kazuhiko Tsuji

    IPC分类号: H01L27/092 H01L21/265

    摘要: In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region and a drain region may also be arranged on the same plane and the latter MOS device is arranged to the gate electrode. This type of device may be constructed as a CMOS type device.In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

    摘要翻译: 在MOS型半导体器件中,MOS器件的源极区域,沟道区域和漏极区域布置在同一平面上,而栅极电极也布置在与沟道区域相邻的同一平面上。 源极区域,沟道区域和漏极区域的另一组也可以布置在同一平面上,并且后面的MOS器件被布置到栅电极。 这种类型的器件可以被构造为CMOS型器件。 在另一种类型的半导体器件中,源极,沟道和漏极区域的上述类型平面布置经由绝缘体层层叠,同时垂直地设置栅电极以与两个沟道区相邻。

    Valve control structure for working vehicle
    30.
    发明授权
    Valve control structure for working vehicle 失效
    工作车辆的阀门控制结构

    公开(公告)号:US4646778A

    公开(公告)日:1987-03-03

    申请号:US719828

    申请日:1985-04-04

    摘要: There is disposed a valve control structure for a working vehicle for operating two control valves by means of a control lever rockable crosswise, wherein one of the valves is operable by a rocking movement in a first direction of the control lever and the other valve is operable by a rocking movement in a second direction of the control lever. A connection switching mechanism is provided between the control lever and the valves to switch interlocking relations of the two control valves with respect to the rocking directions of control lever. This switching is readily carried out by operating a single switch lever permits the operator to use the vehicle after selecting the interlocking relations to which he is accustomed.

    摘要翻译: 设置用于工作车辆的阀控制结构,用于通过可横向摆动的控制杆操作两个控制阀,其中一个阀可通过在控制杆的第一方向上的摇摆运动操作,另一个阀可操作 通过在控制杆的第二方向上的摇摆运动。 连接切换机构设置在控制杆和阀之间,以切换两个控制阀相对于控制杆的摆动方向的互锁关系。 这种切换通过操作单个开关杆容易地执行,允许操作者在选择他习惯的互锁关系之后使用车辆。