摘要:
According to one embodiment, an information processing apparatus includes a main body in which a battery is mountable and a processor provided in the main body and including a first core and a second core. The information processing apparatus further comprises a power supply controller that executes a process for setting the processor in one of a multi-core mode in which the first core and the second core are operable and a single-core mode in which one of the first core and the second core is operable, in accordance with rating information indicative of a performance of the battery mounted in the main body, which is stored in the battery.
摘要:
An assembly apparatus for assembling a sub-assembly of a swash plate type fluidic apparatus includes a holder adapted to hold an end of a driving shaft, a horizontal rail, a curved rail connected with the horizontal rail, a plurality of carriers adapted to seat pistons and a pair of hemispherical shoes as well and to move on the horizontal rail and the curved rail, transporting means adapted to move the carriers on the horizontal rail and the curved rail, a first orienting member adapted to positioned the shoes in spherical seats of the pistons with its surfaces, and a second orienting member disposed connectably with the first orienting member and including surfaces which incline gradually to an inclination angle of a swash plate. The carriers are moved continuously on the horizontal rail and the curved rail by the transporting means. When all of the carriers are placed on the curved rail, the pistons are positioned around an outer peripheral area of the swash plate in a predetermined phaseal relationship, and simultaneously the shoes are guided smoothly between the swash plate and spherical seats of the pistons.
摘要:
A CMOS integrated circuit includes a P-channel type MOS transistor which is formed on an N-type silicon substrate, an N-channel type MOS transistor which is formed on a P well formed in the substrate, and parasitic bipolar transistors which are electrically connected to each other to form a kind of thyristor structure. A power supply voltage is applied to a source electrode of the P-channel type MOS transistor through a part of the substrate which presents a resistance. The resistance is electrically connected to the parasitic bipolar transistor of the thyristor structure to thereby prevent the occurrence of a latch-up phenomenon in which a large current continuously flows through the parasitic bipolar transistors and may destroy the CMOS integrated circuit. Because of the prevention of the latch-up phenomenon, the CMOS integrated circuit is always maintained in good condition.
摘要:
There is disclosed an earth moving vehicle having a pressure oil tank and a battery arranged longitudinally along one lateral side of a swivel deck. A driver's cabin of the vehicle includes covers for covering the battery and the pressure oil tank. The covers have top surfaces at a certain height to provide a large space for the driver.
摘要:
A processing cell of automatic machining system configured in that it is easy to decide or change the number of steps and to design, and to reduce the installation cost. The control unit of the processing cell comprises an operation data storing means for storing every position necessary data for operation at each position of the processing cell installed in the machining section of the automatic machining system, and a position designating means for designating the after-installation position. The control unit reads necessary data for operation out of the operation data storing means in accordance with the position designated by the position designating means. Thus, the operation of each cell can be switched in accordance with the position, and the processing cells can be easily changed in position and adjusted in quantity.
摘要:
According to one embodiment, there is provided an information processing apparatus including a control portion to change the operation mode to the first power consumption mode when a remaining capacity of the battery is reduced to a first capacity if the action of changing the operation mode to the first power consumption mode is set, and change the operation mode to the second power consumption mode when the remaining capacity of the battery is reduced to a second capacity lower than the first capacity if the action of changing the operation mode to the second power consumption mode is set.
摘要:
In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region and a drain region may also be arranged on the same plane and the latter MOS device Is arranged to the gate electrode. This the of device may be constructed as a CMOS type device.In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.
摘要:
In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region, and a drain region may also be arranged on the same plane, and the latter MOS device is arranged adjacent to the gate electrode. This type of device may be constructed as a CMOS type device. In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel, and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.
摘要:
In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region and a drain region may also be arranged on the same plane and the latter MOS device is arranged to the gate electrode. This type of device may be constructed as a CMOS type device.In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.
摘要:
There is disposed a valve control structure for a working vehicle for operating two control valves by means of a control lever rockable crosswise, wherein one of the valves is operable by a rocking movement in a first direction of the control lever and the other valve is operable by a rocking movement in a second direction of the control lever. A connection switching mechanism is provided between the control lever and the valves to switch interlocking relations of the two control valves with respect to the rocking directions of control lever. This switching is readily carried out by operating a single switch lever permits the operator to use the vehicle after selecting the interlocking relations to which he is accustomed.