公开(公告)号：US4820974A

公开(公告)日：1989-04-11

申请号：US941626

申请日：1986-12-11

申请人： Joji Katsura ,  Seiji Yamaguchi ,  Kazuhiko Tsuji ,  Eisuke Ichinohe

发明人： Joji Katsura ,  Seiji Yamaguchi ,  Kazuhiko Tsuji ,  Eisuke Ichinohe

IPC分类号： H01L27/10 ,  G11C11/413 ,  G11C29/00 ,  G11C29/02 ,  G11C29/50 ,  G11C29/56 ,  G01R31/28 ,  G01R31/26

CPC分类号： G11C29/021 ,  G11C29/02 ,  G11C29/50 ,  G11C11/41 ,  G11C2029/5006

摘要： Method for measuring power supply current, e.g., standby current of a random access memory in which, before starting measurement of the power supply current, data is read-out from memory cell of the random access memory and opposite data is written in the memory cell so that the random access memory enters into an unstabilized state. By use of this method, the measurement of the maximum power supply current can be conducted precisely.

摘要翻译： 用于测量电源电流的方法，例如随机存取存储器的待机电流，其中在开始测量电源电流之前，从随机存取存储器的存储单元读出数据并将相对数据写入存储单元 使得随机存取存储器进入不稳定状态。 通过这种方法，可以精确地进行最大电源电流的测量。

公开(公告)号：US4672584A

公开(公告)日：1987-06-09

申请号：US691701

申请日：1985-01-15

申请人： Kazuhiko Tsuji ,  Seiji Yamaguchi ,  Eisuke Ichinohe

发明人： Kazuhiko Tsuji ,  Seiji Yamaguchi ,  Eisuke Ichinohe

IPC分类号： H01L21/74 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01L27/092 ,  H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L27/02

CPC分类号： H01L27/0921

摘要： A CMOS integrated circuit includes a P-channel type MOS transistor which is formed on an N-type silicon substrate, an N-channel type MOS transistor which is formed on a P well formed in the substrate, and parasitic bipolar transistors which are electrically connected to each other to form a kind of thyristor structure. A power supply voltage is applied to a source electrode of the P-channel type MOS transistor through a part of the substrate which presents a resistance. The resistance is electrically connected to the parasitic bipolar transistor of the thyristor structure to thereby prevent the occurrence of a latch-up phenomenon in which a large current continuously flows through the parasitic bipolar transistors and may destroy the CMOS integrated circuit. Because of the prevention of the latch-up phenomenon, the CMOS integrated circuit is always maintained in good condition.

摘要翻译： CMOS集成电路包括形成在N型硅衬底上的P沟道型MOS晶体管，形成在形成于衬底中的P阱上的N沟道型MOS晶体管和电连接的寄生双极晶体管 彼此形成一种晶闸管结构。 通过存在电阻的基板的一部分，将电源电压施加到P沟道型MOS晶体管的源电极。 电阻电连接到晶闸管结构的寄生双极晶体管，从而防止大电流连续流过寄生双极晶体管的闩锁现象的发生，并可能破坏CMOS集成电路。 由于防止闭锁现象，CMOS集成电路始终保持良好状态。

公开(公告)号：US06920678B2

公开(公告)日：2005-07-26

申请号：US10276990

申请日：2002-04-09

申请人： Hiroyuki Ooe ,  Toru Fujimura ,  Kazuhiko Tsuji ,  Yasuo Tomita

发明人： Hiroyuki Ooe ,  Toru Fujimura ,  Kazuhiko Tsuji ,  Yasuo Tomita

IPC分类号： B23Q7/14 ,  B23Q37/00 ,  B23Q39/04 ,  B24B33/02 ,  B24B33/06 ,  B23P23/06

CPC分类号： B23Q7/1426 ,  B23Q37/00 ,  B23Q39/04 ,  Y10T29/5124 ,  Y10T29/5196

摘要： This is a processing cell of an automatic machining system having a small, lightweight and simple structure, easy to determine or change the number of process, easy in design, and low in apparatus cost. A processing cell (A) has a unit structure comprising a conveying device (10) forming a part of a work conveying route (1), a fine boring machine (5a) or honing machine (5b), (5c) as a single machine tool, and a control unit for linking them mutually and controlling, and these cells are installed, being free to increase or decrease in number, in the machining section of automatic machining system such as automatic honing system.

摘要翻译： 这是一种具有体积小，重量轻且结构简单的自动加工系统的处理单元，易于确定或改变工艺数量，设计容易，设备成本低。 处理单元（A）具有单元结构，该单元结构包括形成工件输送路径（1）的一部分的输送装置（10），精细镗床（5a）或珩磨机（5b），（5c） 单个机床，以及用于连接它们并进行控制的控制单元，并且在诸如自动珩磨系统的自动加工系统的加工部中，这些单元被安装成可以自由地增加或减少数量。

公开(公告)号：US5315143A

公开(公告)日：1994-05-24

申请号：US87464

申请日：1993-07-08

申请人： Kazuhiko Tsuji

发明人： Kazuhiko Tsuji

IPC分类号： H01L27/092 ,  H01L27/02 ,  H01L27/01 ,  H01L27/13

CPC分类号： H01L29/785 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/66795

摘要： In a CMOS semiconductor device, a first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on a first plane. A second MOS type device, comprising a second source region, a second channel region and a second drain region is arranged on a second plane above the first MOS type device, with an insulator layer interposed between the two devices. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.

摘要翻译： 在CMOS半导体器件中，包括第一源极区域，第一沟道区域和第一漏极区域的第一MOS型器件布置在第一平面上。 第二MOS型器件，包括第二源极区，第二沟道区和第二漏极区，布置在第一MOS器件上方的第二平面上，绝缘体层插入在两个器件之间。 栅电极设置成与第一和第二沟道区垂直相邻。

公开(公告)号：US5270279A

公开(公告)日：1993-12-14

申请号：US915715

申请日：1992-07-28

申请人： Ikuo Shiraishi ,  Yasuhiko Ninagawa ,  Kazuhiko Tsuji ,  Yoshihiro Matsufuji

发明人： Ikuo Shiraishi ,  Yasuhiko Ninagawa ,  Kazuhiko Tsuji ,  Yoshihiro Matsufuji

IPC分类号： B01D53/60 ,  B01D53/74 ,  B01J20/20 ,  C01B31/08 ,  C01B31/10 ,  C01B31/14 ,  C10L5/00 ,  C10L10/00 ,  C10L10/08 ,  C10L10/14 ,  C01B17/60 ,  B01D53/34

CPC分类号： C01B31/14 ,  B01D53/60 ,  B01J20/20 ,  C01B31/10

摘要： This invention relates to a production process of formed activated coke for SOx and NOx removal which is employed in treatment systems for various flue gases and the like.The formed activated coke for SOx and NOx removal obtained in accordance with the process of this invention has excellent pressure resistance, abrasion resistance and impact strength and also superb SOx- and NOx-removing ability, so that the coke is suitable for use in moving-bed, SOx and NOx- removing systems.The formed activated coke for SOx and NOx removal can of course show excellent SOx- and NOx-removing effects when employed in conventional SOx- and NOx-removing processes and, moreover, owing to its characteristic high NOx-removing ability, is suited for the removal of NOx from low-SOx flue gas of a fluidized-bed combustion boiler or cogeneration power plant.According to the process of this invention, dried, formed activated coke prepared from coal as a raw material is reacted with SO.sub.3 gas at 100.degree.-300.degree. C., followed by heat treatment at 300.degree.-600.degree. C. in an inert atmosphere.

摘要翻译： PCT No.PCT / JP91 / 01715 Sec。 371日期：1992年7月28日 102（e）日期1992年7月28日PCT 1991年12月16日PCT PCT。 出版物WO92 / 11202 本发明涉及用于各种烟气等的处理系统中用于SOx和NOx去除的成形活性焦炭的生产方法。 根据本发明方法获得的形成的用于SOx和NOx去除的活化焦炭具有优异的耐压性，耐磨性和冲击强度，并且还具有极好的SOx和NOx去除能力，使得焦炭适用于移动 - 床，SOx和NOx去除系统。 用于SOx和NOx去除的成型活性焦炭当用于常规的SOx和NOx去除方法中当然可以显示出优异的SOx和NOx去除效果，此外，由于其特有的高NOx去除能力，适用于 从流化床燃烧锅炉或热电联产电厂的低SO x烟道气中除去NOx。 根据本发明的方法，将以煤为原料的干燥形成的活性焦炭在100-300℃与SO3气体反应，然后在惰性气氛中于300-600℃下热处理 。

公开(公告)号：US5125232A

公开(公告)日：1992-06-30

申请号：US691617

申请日：1991-04-25

申请人： Kazuyoshi Arii ,  Shiro Watanabe ,  Kazuhiko Tsuji

发明人： Kazuyoshi Arii ,  Shiro Watanabe ,  Kazuhiko Tsuji

IPC分类号： E02F9/20 ,  E02F9/28 ,  G05G9/04

CPC分类号： G05G9/04 ,  E02F9/2004 ,  E02F9/2866 ,  Y10T137/87048 ,  Y10T137/87201

摘要： A control change system for a hydraulic working vehicle having a plurality of hydraulic actuators operable by control levers each shiftable to a plurality of control positions. This system includes a plurality of pilot-operated control valves for controlling pressure oil supply to the hydraulic actuators, respectively, pilot pressure generating valves for generating a pilot pressure in accordance with the control positions of the control levers, and a pilot pressure switching unit for receiving the pilot pressure from the pilot pressure generating valves and outputting the pilot pressure selectively to the control valves. The pilot pressure switching unit includes a plurality of spools slidable to change communicating passages between a pilot pressure input section and a pilot pressure output section of the switching unit.

摘要翻译： 一种用于液压工作车辆的控制变更系统，其具有多个液压致动器，所述液压致动器可通过控制杆操作，每个控制杆可移动到多个控制位置。 该系统包括多个先导操作控制阀，用于分别控制对液压致动器的压力油供应，用于根据控制杆的控制位置产生先导压力的先导压力发生阀;以及用于 从先导压力产生阀接收先导压力并选择性地将控制压力输出到控制阀。 先导压力切换单元包括多个可滑动以改变先导压力输入部分和开关单元的先导压力输出部分之间的连通通道的线轴。

公开(公告)号：US4261792A

公开(公告)日：1981-04-14

申请号：US932194

申请日：1978-08-09

申请人： Kazuhiko Tsuji ,  Takashi Ohzone ,  Shigetoshi Takayanagi

发明人： Kazuhiko Tsuji ,  Takashi Ohzone ,  Shigetoshi Takayanagi

IPC分类号： H01L21/306 ,  H01L21/3063 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/76888 ,  H01L21/312 ,  H01L21/31687 ,  H01L21/32134

摘要： A metallization or conductor or semiconductor layer formed over one major surface of a semiconductor wafer subjected to anodizing to form an anodized coating which has excellent adherence to the conductor or semiconductor layer and which is used as an etching mask when the conductor or semiconductor layer is etched.

摘要翻译： 在经过阳极化处理的半导体晶片的一个主表面上形成的金属化或导体或半导体层，以形成对导体或半导体层具有优异粘附性的阳极化涂层，并且当导体或半导体层被蚀刻时用作蚀刻掩模 。

公开(公告)号：US20140077409A1

公开(公告)日：2014-03-20

申请号：US14115704

申请日：2012-04-25

申请人： Nobushige Satou ,  Kazuhiko Tsuji

发明人： Nobushige Satou ,  Kazuhiko Tsuji

IPC分类号： B29D99/00

CPC分类号： B29D99/0053 ,  B26D3/003 ,  B26D3/006 ,  B26D3/08 ,  B29C2793/0054 ,  G02B6/4444 ,  G02B6/4446 ,  G02B6/4471 ,  H02G3/22 ,  H02G15/113 ,  Y02A30/14 ,  Y10T82/10 ,  Y10T82/2512 ,  Y10T83/0304 ,  Y10T83/04

摘要： A method for producing a cable-sealing member is disclosed. The method comprises forming a formed rubber including a first plane and a second plane that oppose in a thickness direction and a side plane that bridges a peripheral edge of the first plane and a peripheral edge of the second plane. The method further includes rotating the formed rubber with one axis in the thickness direction as a rotary axis while a holder is applied over the side plane of the formed rubber and, meanwhile, inserting a cutting blade from the first plane into the formed rubber to form a ring-form slit portion and stopping the cutting blade just in front of the second plane, leaving a slit-form ring unbored on one side.

摘要翻译： 公开了一种电缆密封部件的制造方法。 该方法包括形成一个形成的橡胶，其包括第一平面和与厚度方向相对的第二平面和桥接第一平面的周缘和第二平面的周缘的侧面。 该方法还包括将形成的橡胶沿着厚度方向的一个轴线作为旋转轴线旋转，同时将保持器施加在成形橡胶的侧面上，同时将切割刀片从第一平面插入到形成的橡胶中以形成 环形狭缝部分，并且将切割刀片刚好在第二平面的前面停止，留下在一侧未被拉出的狭缝形环。

公开(公告)号：US5885052A

公开(公告)日：1999-03-23

申请号：US866447

申请日：1997-05-30

申请人： Kazuhiko Tsuji ,  Yasuaki Murakami ,  Eisaku Takinami ,  Masaharu Suzuki

发明人： Kazuhiko Tsuji ,  Yasuaki Murakami ,  Eisaku Takinami ,  Masaharu Suzuki

IPC分类号： B65G49/07 ,  B25J9/00 ,  B25J9/06 ,  B25J9/10 ,  B25J18/00 ,  H01L21/677 ,  B25J18/04

CPC分类号： B25J9/1065 ,  B25J9/104 ,  Y10T74/20323

摘要： A robot arm and an apparatus for transferring an article. The robot arm includes a movable hand for holding the article. A first arm has a proximal end that rotatably supports a drive pulley and a distal end that rotatably supports a driven pulley. The pulleys are connected to each other by a belt. A second arm and a third arm each have a proximal end and a distal end. The proximal ends of the second and third arms are pivotally supported by the driven pulley. The distal ends of the second and third arms are pivotally coupled to the hand. The driven pulley, the second arm, and the third arm cooperate with the hand to define a parallel linkage mechanism. A first motor pivots the first arm about its proximal end. A second motor rotates the drive pulley. A pivoting mechanism pivots the second arm about its proximal end relative to the first arm in correspondence with the pivoting of the first arm.

摘要翻译： 机器人手臂和用于传送物品的装置。 机器人手臂包括用于保持物品的活动手。 第一臂具有可旋转地支撑驱动滑轮的近端和可旋转地支撑从动滑轮的远端。 滑轮通过皮带彼此连接。 第二臂和第三臂各自具有近端和远端。 第二和第三臂的近端由从动滑轮枢转地支撑。 第二和第三臂的远端枢转地联接到手。 从动皮带轮，第二臂和第三臂与手配合以限定平行连杆机构。 第一马达围绕其近端枢转第一臂。 第二个电机旋转驱动皮带轮。 枢转机构使第二臂相对于第一臂的枢转相对于第一臂围绕其近端枢转。

公开(公告)号：US4897368A

公开(公告)日：1990-01-30

申请号：US195836

申请日：1988-05-19

申请人： Kazuhiro Kobushi ,  Shuichi Kameyama ,  Shozo Okada ,  Kazuhiko Tsuji

发明人： Kazuhiro Kobushi ,  Shuichi Kameyama ,  Shozo Okada ,  Kazuhiko Tsuji

IPC分类号： H01L21/28

CPC分类号： H01L21/28052 ,  Y10S148/019 ,  Y10S148/082 ,  Y10S148/114 ,  Y10S148/147 ,  Y10S438/914

摘要： Disclosed is a method of fabricating a polycidegate in semiconductor device which has a step of forming a conductor film of polysilicon on a substrate, a step of forming an ion implanted layer by implanting nitrogen ions into the polysilicon conductor film, and a step of forming a low resistance conductor film of titanium on the non-monocyrstalline conductor film. When a field effect transistor is formed by this method, using titanium nitride and/or TiSi.sub.2 alloy of the polysilicon conductor and low resistance conductor of titanium by heat treatment as a gate electrode material, the thickness of the alloyed layer is uniform, and breakdown of the gate insulating film due to local diffusion of low resistance conductor is not induced. In other embodiments, oxygen ions and silicon ions are also employed to form thin layers of tunnel oxide and amorphous silicon, respectively.

摘要翻译： 公开了一种在半导体器件中制造多晶硅封口的方法，该方法具有在衬底上形成多晶硅的导体膜的步骤，通过将氮离子注入多晶硅导体膜形成离子注入层的步骤，以及形成 非单晶硅导体膜上钛的低电阻导体膜。 当通过该方法形成场效应晶体管时，通过热处理将多晶硅导体和钛的低电阻导体的氮化钛和/或TiSi 2合金用作栅电极材料，合金层的厚度是均匀的，并且 不会引起由于低电阻导体的局部扩散而导致的栅极绝缘膜。 在其它实施例中，氧离子和硅离子也分别用于形成隧道氧化物和非晶硅的薄层。