公开(公告)号：US20050266685A1

公开(公告)日：2005-12-01

申请号：US11153223

申请日：2005-06-15

申请人： Minoru Nakano ,  Masaaki Ueno ,  Kazuo Tanaka

发明人： Minoru Nakano ,  Masaaki Ueno ,  Kazuo Tanaka

IPC分类号： H01L21/205 ,  C23C16/46 ,  G05D23/19 ,  H01L21/00 ,  H01L21/44

CPC分类号： G05D23/1935 ,  H01L21/67248

摘要： In a method for controlling temperatures in a semiconductor manufacturing apparatus including a reaction chamber and a plurality of heating sources, a set of power ratios to be fed to the heating sources is determined for each of two or more selected temperatures. Then, a temperature of the reaction chamber is controlled by performing power control on the heating sources based on at least one set of power ratios obtained.

摘要翻译： 在用于控制包括反应室和多个加热源的半导体制造装置中的温度的方法中，针对两个或多个所选择的温度中的每一个确定要供给到加热源的一组功率比。 然后，通过基于获得的至少一组功率比，对加热源进行功率控制来控制反应室的温度。

公开(公告)号：US06900774B2

公开(公告)日：2005-05-31

申请号：US10652240

申请日：2003-09-02

申请人： Kunio Kawakami ,  Osamu Koshiishi ,  Kazuo Tanaka ,  Osamu Hanamura

发明人： Kunio Kawakami ,  Osamu Koshiishi ,  Kazuo Tanaka ,  Osamu Hanamura

IPC分类号： B41J2/175 ,  B41J29/00 ,  H01Q1/52 ,  G01D11/00

CPC分类号： H01Q1/52

摘要： A first plate member constitutes a part of a main frame of a liquid ejection apparatus. A second plate member is extended from the first plate member such that a first part thereof opposes to a traveling path of a carriage which carries a plurality of liquid containers each provided with an IC chip and a receiving antenna. A transmission antenna is provided on an antenna board. The antenna board is mounted on the first part of the second plate member. The second plate member is formed with a first region which allows the transmission antenna to establish radio communication with the receiving antenna, and a second region which shields radio waves.

摘要翻译： 第一板构件构成液体喷射装置的主框架的一部分。 第二板构件从第一板构件延伸，使得其第一部分与承载多个液体容器的托架的行进路径相对，每个液体容器均设置有IC芯片和接收天线。 在天线板上设置发送天线。 天线板安装在第二板构件的第一部分上。 第二板构件形成有允许发射天线与接收天线建立无线电通信的第一区域和屏蔽无线电波的第二区域。

公开(公告)号：US06711531B1

公开(公告)日：2004-03-23

申请号：US09369926

申请日：1999-08-09

申请人： Kazuo Tanaka ,  Hideto Yamaguchi ,  Kenzo Urabe

发明人： Kazuo Tanaka ,  Hideto Yamaguchi ,  Kenzo Urabe

IPC分类号： G06G748

CPC分类号： G06G7/66

摘要： A temperature control simulation method and apparatus for forming a temperature system simulation model on a computer, provide substantially the same response or simulation characteristics as a temperature change in an actual furnace, whereby a temperature control algorithm can be developed and the method or manner of manipulating the temperature control can be learned without using an actual furnace. A transfer function is determined which represents a relationship between a heater input and a temperature output. A temperature control simulation for a heating furnace is executed using the transfer function of a heating furnace as a transfer function that a temperature system simulation device uses.

摘要翻译： 用于在计算机上形成温度系统模拟模型的温度控制模拟方法和装置提供与实际炉中的温度变化基本相同的响应或模拟特性，由此可以开发温度控制算法，以及操作的方法或方式 可以在不使用实际炉的情况下学习温度控制。 确定表示加热器输入和温度输出之间的关系的传递函数。 使用加热炉的传递函数作为温度系统模拟装置使用的传递函数来执行加热炉的温度控制模拟。

公开(公告)号：US06579990B2

公开(公告)日：2003-06-17

申请号：US09933075

申请日：2001-08-21

申请人： Kazuo Tanaka ,  Atsushi Okoshi ,  Kengi Nakaya

发明人： Kazuo Tanaka ,  Atsushi Okoshi ,  Kengi Nakaya

IPC分类号： C07D49300

CPC分类号： C07C51/56 ,  C07C51/43 ,  C07C51/573 ,  C07C63/313

摘要： A process for refined pyromellitic anhydride which comprises dissolving crude pyromellitic acid or crude pyromellitic anhydride in water, then cooling an aqueous solution thus obtained to perform crystallization as pyromellitic acid, then separating a crystal thus obtained from water, then anhydrating the crystal of pyromellitic acid thus separated with heating to produce pyromellitic anhydride, then vaporizing pyromellitic anhydride thus produced, cooling vapor of pyromellitic anhydride thus obtained, and thereby, recovering a refined crystal of pyromellitic anhydride.

公开(公告)号：US06496749B1

公开(公告)日：2002-12-17

申请号：US09413467

申请日：1999-10-06

申请人： Hideto Yamaguchi ,  Kazuo Tanaka ,  Kenzo Urabe

发明人： Hideto Yamaguchi ,  Kazuo Tanaka ,  Kenzo Urabe

IPC分类号： G06F1900

CPC分类号： H01L21/67248

摘要： A semiconductor producing apparatus is capable of quickly and accurately changing a controlled variable to a target value to thereby make the controlled variable quickly follow the target value. Moreover, the controlled variable and target value can be adjusted automatically, thus improving the productivity of a process. The semiconductor producing apparatus includes a PID adjustment section to which a target value and a detected control value are inputted through an adder, a pattern generation section having an approximate function for calculating a pattern output and making it possible to change the pattern output in accordance wit parameter values of the approximate function, and a switcher for switching between an output including at least an output of the pattern generation section and an output of the PID adjustment section to thereby generate an output.

摘要翻译： 半导体制造装置能够快速，准确地将受控变量变更为目标值，从而使受控变量快速地追随目标值。 此外，控制变量和目标值可以自动调整，从而提高过程的生产率。 半导体制造装置包括通过加法器输入目标值和检测到的控制值的PID调整部，具有用于计算图案输出的近似函数的图案生成部，并且能够根据机智改变图案输出 近似功能的参数值，以及用于在至少包括模式生成部的输出的输出与PID调整部的输出之间切换的切换器，从而生成输出。

公开(公告)号：US06472540B1

公开(公告)日：2002-10-29

申请号：US09617547

申请日：2000-07-14

申请人： Kazuo Tanaka ,  Atsushi Okoshi ,  Hiroshi Ogawa

发明人： Kazuo Tanaka ,  Atsushi Okoshi ,  Hiroshi Ogawa

IPC分类号： C07D31304

CPC分类号： C07D313/04

摘要： What is disclosed is a process for producing &egr;-caprolactone which comprises removing impurities by distillation from a reaction mixture obtained by co-oxidation of cyclohexanone and aldehyde, wherein &egr;-caprolactone separated from a purifying column is contacted with oxygen containing gas in the presence of cobalt. High boiling point components are removed to give an acid value of lower than 0.15 mgKOH/g. Thereby, a high quality &egr;-caprolactone providing improved polymer appearance is produced advantageously on an industrial scale without repeated purifying distillations or without using expensive stabilizer or adsorbent for the improvement of color.

摘要翻译： 公开的是一种生产ε-己内酯的方法，其包括通过环己酮和醛的共氧化反应获得的反应混合物中的杂质除去杂质，其中在纯化塔分离的ε-己内酯与含氧气体在存在下接触 钴。 除去高沸点成分，得到低于0.15mgKOH / g的酸值。 因此，提供改善的聚合物外观的高品质ε-己内酯有利地在工业规模上生产，而无需重复纯化蒸馏或不使用昂贵的稳定剂或吸附剂来改善颜色。

公开(公告)号：US06361738B1

公开(公告)日：2002-03-26

申请号：US09446334

申请日：2000-03-28

申请人： Yuji Kaneko ,  Junichiro Baba ,  Kazuo Tanaka ,  Shizuo Mori

发明人： Yuji Kaneko ,  Junichiro Baba ,  Kazuo Tanaka ,  Shizuo Mori

IPC分类号： B22F312

CPC分类号： B22F1/0059 ,  H01F1/0577

摘要： The method of producing an R—Fe—B magnet of the present invention is characterized in that R—Fe—B alloy fine powder is molded in a magnetic field and sintered using a lubricant for molding magnets containing specific components, individually or as a mixture, of specific amounts of methyl caproate and/or methyl caprylate, which provide high crystal orientation, and lubricant comprising depolymerized polymer for improving molded article strength, or a lubricant for molding magnets wherein Ti coupling agent that improves crystal orientation is added to this lubricant for molding magnets. Each particle of the fine powder has a high degree of crystal orientation in the direction of the magnetic field, and molded article strength is markedly improved, leading to improved mass-productivity and yield. Moreover, the above-mentioned lubricants do not react with this magnet powder during sintering and are emitted as a gas. Therefore, binder removal performance is excellent and as a result, an increase in the amount of C remaining in the sintered compact is inhibited, to obtain an R—Fe—B permanent magnet with high Br and iHc properties.

摘要翻译： 本发明的R-Fe-B磁体的制造方法的特征在于，R-Fe-B合金细粉末在磁场中成型，并使用用于成型含有特定成分的磁体的润滑剂单独或作为混合物 的特定量的提供高结晶取向的己酸甲酯和/或辛酸甲酯，以及包含用于提高成型体强度的解聚聚合物的润滑剂或用于成型磁体的润滑剂，其中将用于改善结晶取向的Ti偶联剂加入到该润滑剂中 成型磁铁。 细粉末的每个颗粒在磁场方向上具有高度的晶体取向，并且模制品强度显着提高，从而提高了批量生产率和产率。 此外，上述润滑剂在烧结期间不与该磁粉反应，作为气体排出。 因此，除去粘合剂的性能优异，因此抑制烧结体中剩余C量的增加，得到Br和iHc特性高的R-Fe-B永磁体。

公开(公告)号：US06251542B1

公开(公告)日：2001-06-26

申请号：US09188565

申请日：1998-11-10

申请人： Masahiro Tomita ,  Yasuo Souki ,  Motoki Ito ,  Kazuo Tanaka ,  Hiroshi Tanaka

发明人： Masahiro Tomita ,  Yasuo Souki ,  Motoki Ito ,  Kazuo Tanaka ,  Hiroshi Tanaka

IPC分类号： H01L21302

CPC分类号： H01L21/30608 ,  H01L21/02019 ,  H01L21/31127 ,  H01L21/3121 ,  Y10S438/928

摘要： A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.

摘要翻译： 公开了半导体晶片蚀刻方法，其允许在不使用限制性的臭氧破坏溶剂如三氯乙烷或碳氟化合物的情况下进行蚀刻。 该方法包括在半导体晶片上形成硅树脂或耐碱树脂的保护膜。 然后，蚀刻未被保护膜覆盖的晶片的表面区域。 最后，保护膜从半导体晶片剥离而不会损坏晶片或者使用对环境有害的溶剂。

公开(公告)号：US06156592A

公开(公告)日：2000-12-05

申请号：US141026

申请日：1998-08-27

申请人： Juri Kato ,  Kazuo Tanaka

发明人： Juri Kato ,  Kazuo Tanaka

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/04 ,  H01L27/092 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L21/823835 ,  H01L29/4933 ,  H01L29/4983 ,  H01L2924/0002

摘要： In a CMOS-element-containing semiconductor device, the CMOS element comprises: a silicon substrate; an n-channel MOS element formed on the silicon substrate and including an n-type source/drain region, a gate oxide film and a gate electrode; a p-channel MOS element formed on the silicon substrate and including a p-type source/drain region, a gate oxide film and a gate electrode; and a gate wiring layer electrically interconnecting the gate electrode of the n-channel MOS element and the gate electrode of the p-channel MOS element with one another. The gate electrodes and/or the gate wiring layer include at least in part a metal silicide layer. The gate electrodes and the gate wiring layer contain at arbitrary region impurities consisting of a III group dopant and/or a V group dopant in a concentration of at most 3.times.10.sup.20 atoms cm.sup.-3.

摘要翻译： 在含CMOS元件的半导体器件中，CMOS元件包括：硅衬底; 形成在硅衬底上并包括n型源极/漏极区，栅极氧化膜和栅电极的n沟道MOS元件; 形成在硅衬底上并包括p型源极/漏极区，栅极氧化膜和栅电极的p沟道MOS元件; 以及将n沟道MOS元件的栅电极和p沟道MOS元件的栅电极彼此电连接的栅极布线层。 栅电极和/或栅极布线层至少部分地包括金属硅化物层。 栅极电极和栅极布线层在任意区域包含浓度在3×10 20原子cm -3以下的由III族掺杂剂和/或V族掺杂剂构成的杂质。

公开(公告)号：US5895820A

公开(公告)日：1999-04-20

申请号：US115993

申请日：1998-07-15

申请人： Kazuo Tanaka ,  Masashi Yabuno ,  Hiroshi Ogawa ,  Atsushi Ohkoshi

发明人： Kazuo Tanaka ,  Masashi Yabuno ,  Hiroshi Ogawa ,  Atsushi Ohkoshi

IPC分类号： C07C51/265 ,  C07C51/573

CPC分类号： C07C51/265 ,  C07C51/573

摘要： A process for the production of a trimellitic acid by oxidizing dialkyl aromatic aldehyde and/or its oxide derivative in a liquid phase, the oxidation being carried out in a lower aliphatic carboxylic acid solvent having a water content of 5 to 70% by weight in the presence of a catalyst containing a heavy metal and bromine or being carried out in a solvent containing a lower aliphatic carboxylic acid in the presence of a bromine-manganese catalyst system containing zirconium and/or cerium, and a process for the production of high-quality trimellitic acid anhydride from the trimellitic acid.

摘要翻译： 通过在液相中氧化二烷基芳族醛和/或其氧化物衍生物来生产偏苯三酸的方法，该氧化是在含水量为5-70重量％的低级脂族羧酸溶剂中进行的 在含有锆和/或铈的溴 - 锰催化剂体系的存在下，存在含有重金属和溴的催化剂或在含有低级脂肪族羧酸的溶剂中进行的催化剂，以及生产高质量的方法 偏苯三酸的偏苯三酸酐。