公开(公告)号：US20050014340A1

公开(公告)日：2005-01-20

申请号：US10919432

申请日：2004-08-17

申请人： Kenji Kanamitsu ,  Kouzou Watanabe ,  Norio Suzuki ,  Norio Ishitsuka

发明人： Kenji Kanamitsu ,  Kouzou Watanabe ,  Norio Suzuki ,  Norio Ishitsuka

IPC分类号： H01L27/06 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8222 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/108 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L21/823878 ,  H01L21/28061 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10873 ,  H01L29/4941 ,  H01L29/6659

摘要： A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.

公开(公告)号：US20100019324A1

公开(公告)日：2010-01-28

申请号：US12519489

申请日：2006-12-22

申请人： Hiroyuki Ohara ,  Shino Takahashi ,  Kenji Kanamitsu ,  Shuji Matsuo

发明人： Hiroyuki Ohara ,  Shino Takahashi ,  Kenji Kanamitsu ,  Shuji Matsuo

IPC分类号： H01L27/092 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/28052 ,  H01L21/32155 ,  H01L27/11 ,  H01L29/4933 ,  H01L29/665

摘要： By ion-implanting an inert gas, for example, nitrogen into a polycrystalline silicon film in an nMIS forming region from an upper surface of the polycrystalline silicon film down to a predetermined depth, an upper portion of the polycrystalline silicon film is converted to an amorphous form to form an amorphous/polycrystalline silicon film. And then, an n-type impurity, for example, phosphorous is ion-implanted into the amorphous/polycrystalline silicon film to form an n-type amorphous/polycrystalline silicon film, the n-type amorphous/polycrystalline silicon film is processed to form a gate electrode having a gate length shorter than 0.1 μm, a sidewall formed of an insulating film is formed on a side wall of the gate electrode, and a source/drain diffusion layer is formed. Thereafter, a cobalt silicide (CoSi2) layer is formed on an upper portion of the gate electrode by salicide technique.

摘要翻译： 通过将惰性气体例如氮离子注入到从多晶硅膜的上表面到预定深度的nMIS形成区域中的多晶硅膜中，将多晶硅膜的上部转化为无定形 形成非晶/多晶硅膜。 然后，将n型杂质（例如磷）离子注入到非晶/多晶硅膜中以形成n型非晶/多晶硅膜，将n型非晶/多晶硅膜加工形成 栅极长度小于0.1μm的栅电极，在栅电极的侧壁上形成由绝缘膜形成的侧壁，形成源极/漏极扩散层。 此后，通过硅化物技术在栅电极的上部形成硅化钴（CoSi 2）层。

公开(公告)号：US07411242B2

公开(公告)日：2008-08-12

申请号：US11239338

申请日：2005-09-30

申请人： Takashi Kobayashi ,  Yoshitaka Sasago ,  Tsuyoshi Arigane ,  Yoshihiro Ikeda ,  Kenji Kanamitsu

发明人： Takashi Kobayashi ,  Yoshitaka Sasago ,  Tsuyoshi Arigane ,  Yoshihiro Ikeda ,  Kenji Kanamitsu

IPC分类号： H01L29/76

CPC分类号： H01L27/11526 ,  G11C16/0491 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11546 ,  H01L29/42324

摘要： The object of the present invention is to provide a new nonvolatile semiconductor memory device and its manufacturing method for the purpose of miniaturizing a virtual grounding type memory cell based on a three-layer polysilicon gate, enhancing the performance, and boosting the yield. In a memory cell according to the present invention, a floating gate's two end faces perpendicular to a word line and channel are partly placed over the top of a third gate via a dielectric film. The present invention can reduce the memory cell area of a nonvolatile semiconductor memory device, increase the operating speed, and enhances the yield.

摘要翻译： 本发明的目的是提供一种新的非易失性半导体存储器件及其制造方法，其目的是使三层多晶硅栅极的虚拟接地型存储单元小型化，提高性能，提高产量。 在根据本发明的存储器单元中，垂直于字线和沟道的浮动栅极的两个端面部分地通过电介质膜放置在第三栅极的顶部上。 本发明可以减少非易失性半导体存储器件的存储单元面积，提高工作速度，提高产量。