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公开(公告)号：US08492774B2
公开(公告)日：2013-07-23
申请号：US13033767
申请日：2011-02-24
IPC分类号： H01L29/15
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/10 , Y10T117/1024
摘要： A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10−3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
摘要翻译： 一种SiC单晶膜的制造方法，其通过LPE法在熔体溶剂中使用SiC溶液，使具有低掺杂浓度的SiC外延膜在直径至少为2英寸的基板上稳定地生长，其包括抽真空 在将熔体原料引入炉内之前，将晶体生长炉的内部加热抽真空直到晶体生长温度下的真空压力为5×10 -3 Pa以下的步骤。 然后，将含有熔体原料的坩埚引入炉内，形成SiC溶液，在沉积在溶液中的基板上生长SiC外延膜。
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公开(公告)号：US20120211769A1
公开(公告)日：2012-08-23
申请号：US13385566
申请日：2012-02-27
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/062 , Y10T428/21 , Y10T428/265
摘要： A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.
摘要翻译： 通过抑制从晶片产生的缺陷可以生长出其质量良好的外延膜的SiC单晶晶片具有厚度至多为50nm的受影响的表面层和氧含量至多为1.0×x的SiC单晶部分 1017原子/ cm3。 该SiC单晶晶片由使用氧含量为100ppm以下的原料和氧浓度为100ppm以下的非氧化性气氛的溶液生长法得到的高纯度SiC体单晶制造。
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公开(公告)号：US20110198614A1
公开(公告)日：2011-08-18
申请号：US13033767
申请日：2011-02-24
IPC分类号： H01L29/161 , C30B19/04 , C30B19/06 , C30B19/12
CPC分类号： C30B29/36 , C30B19/02 , C30B19/04 , C30B19/10 , Y10T117/1024
摘要： A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10−3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.
摘要翻译： 一种SiC单晶膜的制造方法，其通过LPE法在熔体溶剂中使用SiC溶液，使具有低掺杂浓度的SiC外延膜在直径至少为2英寸的基板上稳定地生长，其包括抽真空 在将熔体原料引入炉内之前，将晶体生长炉的内部加热抽真空直到晶体生长温度下的真空压力为5×10 -3 Pa以下的步骤。 然后，将含有熔体原料的坩埚引入炉内，形成SiC溶液，在沉积在溶液中的基板上生长SiC外延膜。
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公开(公告)号：US07520930B2
公开(公告)日：2009-04-21
申请号：US10967070
申请日：2004-10-15
摘要： A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti) and having an atomic ratio between Si and M in which the value of x, when express as Si1-xMx, is 0.1≦x≦0.7 in the case where M is Mn or 0.1≦x≦0.25 in the case where M is Ti at a temperature of the melt which is below 2000° C. The C component is preferably supplied into the melt by dissolution of a graphite crucible which contains the melt such that the melt is free from undissolved C. One method of crystal growth is performed by cooling the melt after a seed substrate is immersed in the melt.
摘要翻译： 具有最小数量的结构缺陷并且没有微管缺陷的良好结晶质量的块状碳化硅单晶可以通过在包含Si，C和M的合金的熔体中的晶体生长（其中M为Mn或 Ti），并且在M和Mn之间的原子比在X表示为Si1-xMx时的x的值为0.1≤x≤0.7，在M为Mn或0.1≤x≤0.25的情况下 在熔体温度低于2000℃时M为Ti的情况。优选通过溶解包含熔体的石墨坩埚使熔融物不溶解C而将C成分供入熔体中。一种方法 晶种生长通过在种子基底浸入熔体中之后冷却熔融物来进行。
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公开(公告)号：US20070209573A1
公开(公告)日：2007-09-13
申请号：US11712841
申请日：2007-03-01
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Akihiro Yauchi , Yoshihisa Ueda , Yutaka Itoh , Nobuhiro Okada
CPC分类号： C30B9/06 , C30B9/10 , C30B15/305 , C30B17/00 , C30B19/02 , C30B19/04 , C30B29/36 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1072
摘要： A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
摘要翻译： 通过溶液生长法生产SiC单晶，其中将种子轴附着的晶种浸入溶解在Si或Si合金熔体中的SiC溶液中，使SiC单晶在种子上生长 通过逐渐冷却溶液或通过在其中提供温度梯度来制备。 对于这种方法，通过反复加速到规定的转速并以该速度保持并且减速到较低的转速或0转速来施加坩埚的加速旋转。 坩埚的旋转方向可以反转每个加速度。 种子轴也可以与坩埚的旋转同步旋转，与坩埚相同或相反。 以高的晶体生长速率生产不含夹杂物的大质量好的单晶。
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公开(公告)号：US20050183657A1
公开(公告)日：2005-08-25
申请号：US10967070
申请日：2004-10-15
摘要： A bulk silicon carbide single crystal of good crystalline quality which includes a minimized number of structural defects and is free from micropipe defects can be produced by crystal growth in a melt of an alloy comprising Si, C, and M (wherein M is either Mn or Ti) and having an atomic ratio between Si and M in which the value of x, when express as Si1-xMx, is 0.1≦×≦0.7 in the case where M is Mn or 0.1≦×≦0.25 in the case where M is Ti at a temperature of the melt which is below 2000° C. The C component is preferably supplied into the melt by dissolution of a graphite crucible which contains the melt such that the melt is free from undissolved C. One method of crystal growth is performed by cooling the melt after a seed substrate is immersed in the melt.
摘要翻译： 具有最小数量的结构缺陷并且没有微管缺陷的良好结晶质量的块状碳化硅单晶可以通过在包含Si，C和M的合金的熔体中的晶体生长（其中M为Mn或 Ti），并且具有Si和M之间的原子比，其中当x 1表示为Si 1-x M x x时，x的值为0.1 <= x <= 0.7 在熔体温度低于2000℃时M为Ti的情况下，M为Mn或0.1 <= x <= 0.25的情况。优选通过溶解石墨坩埚将C成分供入熔体中 其包含熔体，使得熔体不含未溶解的C.晶种生长的一种方法是在种子基底浸入熔体中之后冷却熔体。
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公开(公告)号：US09732441B2
公开(公告)日：2017-08-15
申请号：US14125625
申请日：2012-06-15
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B9/00 , C30B35/00 , C30B9/10 , C30B29/36 , C30B15/32 , C30B17/00 , C30B11/00 , C30B19/06 , C30B19/08
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.
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28.发明授权公开(公告)号：US09617655B2
公开(公告)日：2017-04-11
申请号：US13997722
申请日：2011-12-26
申请人： Nobuhiro Okada , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Kouji Moriguchi , Hironori Daikoku , Hiroshi Suzuki , Tomokazu Ishii , Hidemitsu Sakamoto , Motohisa Kado , Yoichiro Kawai
发明人： Nobuhiro Okada , Kazuhito Kamei , Kazuhiko Kusunoki , Nobuyoshi Yashiro , Kouji Moriguchi , Hironori Daikoku , Hiroshi Suzuki , Tomokazu Ishii , Hidemitsu Sakamoto , Motohisa Kado , Yoichiro Kawai
CPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B15/305 , C30B17/00 , C30B29/36 , Y10T117/1068
摘要： An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1.5 (1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2 (2) D2=503292×(1/(f×σs×μs))1/2 (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs is relative permeability of the SIC solution.
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公开(公告)号：US20140116324A1
公开(公告)日：2014-05-01
申请号：US14125625
申请日：2012-06-15
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.
摘要翻译： 一种用于制造SiC单晶的装置包括用于容纳Si-C溶液的坩埚和具有附接有SiC晶种（36）的下端面的种子轴。 种子轴包括在坩埚的高度方向上延伸并具有第一通道的内管。 外管容纳内管，构成内管之间的第二通道，下端面覆盖外管下端开口的底部。 第一通道和第二通道的一个通道用作冷却剂气体向下流动的引入通道，另一个通道用作冷却剂气体向上流动的排出通道。 构成引入通道的管内的区域与SiC晶种不小于60％的区域重叠。
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公开(公告)号：US20130220212A1
公开(公告)日：2013-08-29
申请号：US13883350
申请日：2011-11-04
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuchiro Okada , Katsunori Danno , Hironori Daikoku
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Kouji Moriguchi , Nobuchiro Okada , Katsunori Danno , Hironori Daikoku
摘要： A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
摘要翻译： 制造n型SiC单晶的方法能够抑制制造的多个n型SiC单晶锭中的氮浓度的变化。 一种方法包括以下步骤：提供一种制造装置（100），该制造装置（100）包括具有坩埚（7）将被设置的区域的腔室（1） 加热要安置坩埚（7）的区域并抽空腔室（1）中的气体; 在排气之后用包含惰性气体和氮气的混合气体填充室（1）; 加热和熔化容纳在所述区域中的坩埚（7）中的原料以产生含有硅和碳的SiC溶液（8）; 并在混合气体气氛下将SiC晶种浸入SiC溶液中，以在SiC晶种上生长n型SiC单晶。
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