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    Method of forming a pattern and method of manufacturing a capacitor
    22.
    发明授权
    Method of forming a pattern and method of manufacturing a capacitor 有权
    形成图案的方法和制造电容器的方法

    公开(公告)号：US08053308B2

    公开(公告)日：2011-11-08

    申请号：US11945934

    申请日：2007-11-27

    申请人： Kyoung-Min Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim

    发明人： Kyoung-Min Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Myung-Sun Kim

    IPC分类号： H01L21/8242

    CPC分类号： H01G4/33 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/91

    摘要： In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

    摘要翻译： 在形成图案的方法中，在基板上形成具有开口的模具层。 在具有开口的模具层上形成导电层，导电层具有基本均匀的厚度。 在具有导电层的开口中形成缓冲层图案，缓冲层图案具有包含N-乙烯基-2-吡咯烷酮的重复单元和丙烯酸重复单元的水溶性共聚物的交联结构。 蚀刻在缓冲层图案上暴露的导电层的上部。 因此，在基板上形成用于半导体器件的导电图案。 形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

    Method of forming a pattern and method of manufacturing a capacitor using the same
    24.
    发明授权
    Method of forming a pattern and method of manufacturing a capacitor using the same 有权
    形成图案的方法和使用其形成电容器的方法

    公开(公告)号：US07638388B2

    公开(公告)日：2009-12-29

    申请号：US11945922

    申请日：2007-11-27

    申请人： Kyoung-Min Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Seok Han

    发明人： Kyoung-Min Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Seok Han

    IPC分类号： H01L21/8244

    CPC分类号： H01G4/33 ,  H01G4/40 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

    摘要翻译： 在形成图案的方法和使用其的电容器的制造方法中，在具有开口的模具层上形成导电层。 在开口中的导电层上形成包含具有蒽 - 甲基丙烯酸甲酯的重复单元的聚合物和烷氧基 - 乙烯基苯的重复单元的第一缓冲层图案。 烘烤第一缓冲层图案以交联聚合物并形成不溶于显影溶液的第二缓冲层图案。 通过使用第二缓冲层图案作为蚀刻掩模，选择性地去除模层顶部的导电层。 因此，形成用于半导体器件的导电图案。 形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same
    25.
    发明授权
    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same 失效
    硅氧烷聚合物组合物，使用其形成图案的方法，以及使用其制造半导体的方法

    公开(公告)号：US07776730B2

    公开(公告)日：2010-08-17

    申请号：US12216682

    申请日：2008-07-09

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Siloxane polymer composition
    27.
    发明授权
    Siloxane polymer composition 失效
    硅氧烷聚合物组合物

    公开(公告)号：US08450444B2

    公开(公告)日：2013-05-28

    申请号：US12856359

    申请日：2010-08-13

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： C08G77/385

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    SILOXANE POLYMER COMPOSITION
    28.
    发明申请
    SILOXANE POLYMER COMPOSITION 失效
    硅氧烷聚合物组合物

    公开(公告)号：US20100305266A1

    公开(公告)日：2010-12-02

    申请号：US12856359

    申请日：2010-08-13

    申请人： Kyoung-Mi KIM ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi KIM ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： C08L83/06

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Methods of forming a pattern using negative-type photoresist compositions
    29.
    发明申请
    Methods of forming a pattern using negative-type photoresist compositions 有权
    使用负型光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US20100248134A1

    公开(公告)日：2010-09-30

    申请号：US12662076

    申请日：2010-03-30

    申请人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/0382 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/11546

    摘要： A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.

    摘要翻译： 一种形成图案和负型光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，所述光致抗蚀剂组合物包括聚合物，光致酸产生剂和溶剂，其中所述聚合物包括 作为侧链的烷氧基甲硅烷基，可以被不可溶于显影剂的酸交联; 通过将第一部分暴露于光来固化光致抗蚀剂膜的第一部分，暴露的第一部分通过其中的烷氧基甲硅烷基的交联反应固化; 以及向所述光致抗蚀剂膜提供显影剂以去除未曝光的所述光致抗蚀剂膜的第二部分，由此在所述基板上形成光致抗蚀剂图案。

    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same
    30.
    发明申请
    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same 失效
    硅氧烷聚合物组合物，使用其形成图案的方法，以及使用其制造半导体的方法

    公开(公告)号：US20090017592A1

    公开(公告)日：2009-01-15

    申请号：US12216682

    申请日：2008-07-09

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/02 ,  C08G77/14

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。