公开(公告)号：US07700290B2

公开(公告)日：2010-04-20

申请号：US11479306

申请日：2006-06-30

申请人： Jeo-young Shim ,  Soo-suk Lee ,  Chin-sung Park ,  Kyu-youn Hwang

发明人： Jeo-young Shim ,  Soo-suk Lee ,  Chin-sung Park ,  Kyu-youn Hwang

IPC分类号： C12Q1/68 ,  C12M1/00 ,  C12M3/00

CPC分类号： B01L3/50857 ,  B01L2200/12 ,  B01L2300/0636 ,  B01L2300/0819 ,  B82Y10/00 ,  G01N27/4145 ,  H01L21/823828 ,  H01L51/0093 ,  H01L51/0545 ,  Y10T436/2575

摘要： A method of manufacturing a DNA (deoxyribonucleic acid) chip is provided. The DNA chip has a plurality of transistors formed on a substrate and an organic layer and a DNA probe sequentially stacked on a gate of the transistor. The method includes forming an inter-layer insulation layer on the substrate to cover the transistors, planarizing the inter-layer insulation layer, forming at least two contact holes exposing gate electrodes of the transistors in the inter-layer insulation layer, selectively forming organic layers on the exposed gate electrodes, attaching a first DFR (dry film resist) layer to the upper surface of the inter-layer insulation layer to cover the contact holes, removing a portion of the first DFR layer covering a first contact hole among the contact holes, attaching a first DNA probe to the organic layers in the first contact hole, and removing a remaining portion of the first DFR layer.

摘要翻译： 提供了DNA（脱氧核糖核酸）芯片的制造方法。 DNA芯片具有形成在基板上的多个晶体管，并且顺序层叠在晶体管的栅极上的有机层和DNA探针。 该方法包括在衬底上形成层间绝缘层以覆盖晶体管，平坦化层间绝缘层，形成暴露在层间绝缘层中的晶体管的栅电极的至少两个接触孔，选择性地形成有机层 在暴露的栅电极上，将第一DFR（干膜抗蚀剂）层附着到层间绝缘层的上表面以覆盖接触孔，去除覆盖接触孔中的第一接触孔的第一DFR层的一部分 将第一DNA探针连接到第一接触孔中的有机层，以及去除第一DFR层的剩余部分。

公开(公告)号：US20070003967A1

公开(公告)日：2007-01-04

申请号：US11479306

申请日：2006-06-30

申请人： Jeo-young Shim ,  Soo-suk Lee ,  Chin-sung Park ,  Kyu-youn Hwang

发明人： Jeo-young Shim ,  Soo-suk Lee ,  Chin-sung Park ,  Kyu-youn Hwang

IPC分类号： C12Q1/68

CPC分类号： B01L3/50857 ,  B01L2200/12 ,  B01L2300/0636 ,  B01L2300/0819 ,  B82Y10/00 ,  G01N27/4145 ,  H01L21/823828 ,  H01L51/0093 ,  H01L51/0545 ,  Y10T436/2575

摘要： A method of manufacturing a DNA (deoxyribonucleic acid) chip is provided. The DNA chip has a plurality of transistors formed on a substrate and an organic layer and a DNA probe sequentially stacked on a gate of the transistor. The method includes forming an inter-layer insulation layer on the substrate to cover the transistors, planarizing the inter-layer insulation layer, forming at least two contact holes exposing gate electrodes of the transistors in the inter-layer insulation layer, selectively forming organic layers on the exposed gate electrodes, attaching a first DFR (dry film resist) layer to the upper surface of the inter-layer insulation layer to cover the contact holes, removing a portion of the first DFR layer covering a first contact hole among the contact holes, attaching a first DNA probe to the organic layers in the first contact hole, and removing a remaining portion of the first DFR layer.

摘要翻译： 提供了DNA（脱氧核糖核酸）芯片的制造方法。 DNA芯片具有形成在基板上的多个晶体管，并且顺序层叠在晶体管的栅极上的有机层和DNA探针。 该方法包括在衬底上形成层间绝缘层以覆盖晶体管，平坦化层间绝缘层，形成暴露在层间绝缘层中的晶体管的栅电极的至少两个接触孔，选择性地形成有机层 在暴露的栅电极上，将第一DFR（干膜抗蚀剂）层附着到层间绝缘层的上表面以覆盖接触孔，去除覆盖接触孔中的第一接触孔的第一DFR层的一部分 将第一DNA探针连接到第一接触孔中的有机层，以及去除第一DFR层的剩余部分。

公开(公告)号：US07985453B2

公开(公告)日：2011-07-26

申请号：US12709741

申请日：2010-02-22

申请人： Jeo-young Shim ,  Sung-ouk Jung ,  Jin-na Namgoong ,  Kyu-tae Yoo ,  Jang-seok Ma

发明人： Jeo-young Shim ,  Sung-ouk Jung ,  Jin-na Namgoong ,  Kyu-tae Yoo ,  Jang-seok Ma

IPC分类号： B05D5/00 ,  B05D1/36 ,  G01N21/47

CPC分类号： C03C17/28 ,  C03C2218/111 ,  C03C2218/365 ,  G01N21/278 ,  G01N21/6452

摘要： A method of manufacturing a calibration apparatus for an optical scanner. The method includes reacting a substrate coated with a functional group and a molecule capable of forming an activated excimer to immobilize the molecule on the substrate.

摘要翻译： 一种制造用于光学扫描仪的校准装置的方法。 该方法包括使涂覆有官能团的基底和能够形成活化的受激准分子的分子反应以将分子固定在基底上。

公开(公告)号：US09382575B2

公开(公告)日：2016-07-05

申请号：US13614881

申请日：2012-09-13

申请人： Kun-sun Eom ,  Dong-ho Lee ,  Jeo-young Shim ,  Hee-jeong Jeong ,  Tae-han Jeon

发明人： Kun-sun Eom ,  Dong-ho Lee ,  Jeo-young Shim ,  Hee-jeong Jeong ,  Tae-han Jeon

IPC分类号： C12Q1/68 ,  G01N33/487

CPC分类号： C12Q1/68 ,  G01N33/48721 ,  C12Q2565/631

摘要： A biomolecule detection apparatus comprising a nanopore device having a front surface and rear surface and including a nanopore having a nano-sized diameter; a reservoir disposed adjacent to a rear surface of the nanopore device; and a power supply unit comprising a first electrode disposed in a front of the nanopore device; a second electrode disposed inside the reservoir; and a third electrode disposed adjacent the nanopore and between the first electrode and the second electrode; as well as a method of using the biomolecule detection apparatus to detect a biomolecule in a sample.

摘要翻译： 一种生物分子检测装置，包括具有前表面和后表面的纳米孔装置，并且包括具有纳米尺寸直径的纳米孔; 设置在所述纳米孔装置的后表面附近的储存器; 以及电源单元，包括设置在所述纳米孔装置的前面的第一电极; 设置在所述储存器内的第二电极; 以及与所述纳米孔相邻并且位于所述第一电极和所述第二电极之间的第三电极; 以及使用生物分子检测装置检测样品中的生物分子的方法。

公开(公告)号：US08038943B2

公开(公告)日：2011-10-18

申请号：US11695905

申请日：2007-04-03

申请人： Kyu-tae Yoo ,  Kyu-sang Lee ,  Won-seok Chung ,  Jeo-young Shim ,  Yeon-ja Cho

发明人： Kyu-tae Yoo ,  Kyu-sang Lee ,  Won-seok Chung ,  Jeo-young Shim ,  Yeon-ja Cho

IPC分类号： G01N27/00

CPC分类号： G01N33/54373

摘要： A method of detecting a presence of bio-molecules, or a concentration of the target bio-molecules using a field effect transistor, includes allowing a first sample including a first target bio-molecule to contact a sensing surface of the field effect transistor and measuring a change in an electric signal of the field effect transistor, the field effect transistor including a substrate, a source region and a drain region, the source region and the drain region formed apart from each other on the substrate, the source region and the drain region each doped to having an opposite polarity than a polarity of the substrate, a channel region disposed between the source region and the drain region and an insulating layer including the sensing surface, the insulating layer disposed on the channel region.

摘要翻译： 使用场效应晶体管检测生物分子的存在或靶生物分子的浓度的方法包括允许包含第一靶生物分子的第一样品接触场效应晶体管的感测表面并测量 场效应晶体管的电信号的变化，所述场效应晶体管包括基板，源极区和漏极区，在所述基板上彼此分离形成的所述源极区和漏极区，所述源极区和漏极 每个被掺杂为具有与衬底的极性相反的极性，设置在源区和漏区之间的沟道区和包括感测表面的绝缘层，绝缘层设置在沟道区上。

公开(公告)号：US07859029B2

公开(公告)日：2010-12-28

申请号：US11621191

申请日：2007-01-09

申请人： Kyu-sang Lee ,  Kyu-tae Yoo ,  Jeo-young Shim ,  Jin-tae Kim ,  Yeon-ja Cho

发明人： Kyu-sang Lee ,  Kyu-tae Yoo ,  Jeo-young Shim ,  Jin-tae Kim ,  Yeon-ja Cho

IPC分类号： H01L29/78

CPC分类号： G01N33/54373 ,  C12Q1/6825 ,  G01N27/4145

摘要： Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.

摘要翻译： 提供了一种用于检测离子材料的基于FET的传感器，包括基于FET的传感器的离子材料检测装置，以及使用基于FET的传感器检测离子材料的方法。 基于FET的传感器包括：感测室，包括参考电极和多个感测FET; 以及包括参考电极和多个参考FET的参考室。 该方法包括：使第一溶液流入和流出基于FET的传感器的感测室和参考室; 使预期含有离子材料的第二溶液流入和流出感测室，同时使第一溶液持续流入和移出参考室; 测量每个感测和参考FET的源极和漏极之间的沟道区域中的电流; 并校正感测FET的电流。

公开(公告)号：US07839134B2

公开(公告)日：2010-11-23

申请号：US11619650

申请日：2007-01-04

申请人： Kyu-sang Lee ,  Kyu-tae Yoo ,  Jeo-young Shim ,  Won-seok Chung ,  Yeon-ja Cho

发明人： Kyu-sang Lee ,  Kyu-tae Yoo ,  Jeo-young Shim ,  Won-seok Chung ,  Yeon-ja Cho

IPC分类号： G01N27/00

CPC分类号： G01N27/4145 ,  G01N27/27

摘要： A method for simultaneously detecting a size and concentration of ionic materials includes measuring voltage drop values of at least three ionic materials of which sizes and concentrations are known using each of at least two FET-based sensors having different electrical characteristics, determining at least three points in a three-dimensional plot from the known sizes, concentrations and the measured voltage drop values, approximating the at least three points into a single plane, measuring a voltage drop value of an ionic material of which size and concentration are unknown using the at least two FET-based sensors, determining equipotential lines existing on the plane using the voltage drop value of the unknown ionic material and determining a cross point between each of the equipotential lines.

摘要翻译： 用于同时检测离子材料的尺寸和浓度的方法包括测量至少三种离子材料的电压降值，其中尺寸和浓度已知使用具有不同电特性的至少两个基于FET的传感器中的每一个，确定至少三个点 在已知尺寸，浓度和测量的电压降值的三维图中，将至少三个点近似为单个平面，测量其尺寸和浓度未知的离子材料的电压降值，至少使用至少 两个基于FET的传感器，使用未知离子材料的电压降值确定在平面上存在的等电位线，并确定每个等电位线之间的交叉点。

公开(公告)号：US20060205013A1

公开(公告)日：2006-09-14

申请号：US11336110

申请日：2006-01-20

申请人： Jeo-young Shim ,  Su-hyeon Kim ,  Kyu-tae Yoo ,  Sung-ouk Jung ,  Joon-shik Park

发明人： Jeo-young Shim ,  Su-hyeon Kim ,  Kyu-tae Yoo ,  Sung-ouk Jung ,  Joon-shik Park

IPC分类号： G01N33/53

CPC分类号： B82Y30/00 ,  B82Y15/00 ,  G01N27/4145

摘要： Provided is a field effect transistor (FET) type biosensor including a source electrode, a gate, and a drain electrode. A ligand that can bind to a side of a nucleic acid is added to the surface of the gate. In a conventional FET type biosensor, it is difficult to detect a signal within the debye length because a target nucleic acid is directly fixed to the surface of a gate of the conventional FET. However, in the present invention, this problem can be overcome and the debye length can be increased by treating the surface of a gate of an FET sensor with a ligand that can bind to a side of a nucleic acid. The ligand can be adsorbed onto the surface of the gate. In this case, the nucleic acid is adsorbed parallel to the surface of the gate, not perpendicular to the surface of the gate, thus generating an effective depletion region. In addition, hybridization efficiency can be increased because a hybridized sample can be injected into an FET sensor at high ionic strength.

摘要翻译： 提供了包括源电极，栅极和漏电极的场效应晶体管（FET）型生物传感器。 可以结合核酸一侧的配体加入到门的表面。 在传统的FET型生物传感器中，由于目标核酸直接固定在常规FET的栅极表面，难以检测德拜长度内的信号。 然而，在本发明中，可以克服这个问题，并且可以通过用可以结合核酸一侧的配体处理FET传感器的栅极的表面来增加德拜长度。 配体可以吸附在栅极的表面上。 在这种情况下，核酸被平行于栅极的表面吸附，而不垂直于栅极的表面，从而产生有效的耗尽区域。 此外，杂交效率可以提高，因为杂化样品可以以高离子强度注入FET传感器。

公开(公告)号：US09465007B2

公开(公告)日：2016-10-11

申请号：US14224770

申请日：2014-03-25

申请人： Jeo-young Shim ,  Tae-han Jeon ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

发明人： Jeo-young Shim ,  Tae-han Jeon ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

IPC分类号： G01N27/447 ,  G01N33/487

CPC分类号： G01N27/44791 ,  G01N33/48721

摘要： A nanosensor may include a substrate that has a hole formed therein, a first insulating layer that is disposed on the substrate and has a nanopore formed therein, first and second electrodes that are disposed on the first insulating layer and are spaced apart from each other, first and second electrode pads that are disposed on the first and second electrodes, respectively, and a protective layer disposed on the first and second electrode pads. A method of manufacturing a nanosensor may include forming a first insulating layer, graphene, and a metal layer on a substrate, patterning the metal layer and the graphene, forming a protective layer on a portion of the graphene and the metal layer, exposing a portion of the graphene by removing a portion of the protective layer, forming a hole in the substrate, and forming a nanopore in the first insulating layer and the graphene to be connected to the hole.

摘要翻译： 纳米传感器可以包括其中形成有孔的基板，设置在基板上并且在其中形成有纳米孔的第一绝缘层，设置在第一绝缘层上并彼此间隔开的第一和第二电极， 分别设置在第一和第二电极上的第一和第二电极焊盘以及设置在第一和第二电极焊盘上的保护层。 制造纳米传感器的方法可以包括在基板上形成第一绝缘层，石墨烯和金属层，图案化金属层和石墨烯，在石墨烯和金属层的一部分上形成保护层，将部分 通过去除保护层的一部分，在衬底中形成孔，并在第一绝缘层中形成纳米孔和与孔连接的石墨烯。

公开(公告)号：US09068914B2

公开(公告)日：2015-06-30

申请号：US13605711

申请日：2012-09-06

申请人： Jeo-young Shim ,  Tae-han Jeon ,  Kun-sun Eom ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

发明人： Jeo-young Shim ,  Tae-han Jeon ,  Kun-sun Eom ,  Dong-ho Lee ,  Hee-jeong Jeong ,  Seong-ho Cho

IPC分类号： G01N27/414 ,  G01N15/10 ,  B82Y15/00 ,  G01N33/487 ,  G01N15/00

CPC分类号： G01N15/1031 ,  B82Y15/00 ,  G01N15/1056 ,  G01N33/48721 ,  G01N2015/0038

摘要： A nanogap sensor includes a first layer in which a micropore is formed; a graphene sheet disposed on the first layer and including a nanoelectrode region in which a nanogap is formed, the nanogap aligned with the micropore; a first electrode formed on the grapheme sheet; and a second electrode formed on the graphene sheet, wherein the first electrode and the second electrode are connected to respective ends of the nanoelectrode region.

摘要翻译： 纳米隙传感器包括其中形成微孔的第一层; 设置在所述第一层上并且包括其中形成有纳米隙的纳米电极区域的所述纳米隙与所述微孔对准的石墨烯片; 形成在所述刻画片上的第一电极; 以及形成在所述石墨烯片上的第二电极，其中所述第一电极和所述第二电极连接到所述纳米电极区域的各个端部。