公开(公告)号：US20210183968A1

公开(公告)日：2021-06-17

申请号：US17116800

申请日：2020-12-09

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  Sohyung LEE

IPC: H01L27/32 ,  H01L29/786

Abstract: Disclosed is a display apparatus including a first thin film transistor (TFT) and a second thin film transistor having a bottom gate structure and including an oxide semiconductor layer. The first TFT may be used as a switching device and the second TFT may be used as a driving device, and these TFTs have different operation properties from each other. One or more embodiments of the present disclosure provides a method of arranging a plurality of TFTs having different properties in a display apparatus. This not only provides a display apparatus with TFTs integrated at a high density but also an efficient way of driving the display apparatus.

公开(公告)号：US20180350995A1

公开(公告)日：2018-12-06

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20180122833A1

公开(公告)日：2018-05-03

申请号：US15798776

申请日：2017-10-31

Applicant: LG Display Co. , Ltd.

Inventor： Sohyung LEE ,  Sungki KIM ,  Youngjin YI ,  Mincheol KIM ,  Jeongsuk YANG ,  Seoyeon IM

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/26 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure relates to a thin film transistor substrate having a bi-layer oxide semiconductor. The present disclosure provides a thin film transistor substrate comprising: a substrate; and an oxide semiconductor layer on the substrate, wherein the oxide semiconductor layer includes: a first oxide semiconductor layer having indium, gallium and zinc; and a second oxide semiconductor layer stacked on the first oxide semiconductor layer having the indium, gallium and zinc, wherein any one layer of the first and the second oxide semiconductor layers has a first composition ratio of the indium, gallium and zinc of 1:1:1; and wherein other layer has a second composition ratio of the indium, gallium and zinc in which the indium ratio is higher than the zinc ratio.

公开(公告)号：US20150243685A1

公开(公告)日：2015-08-27

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板的第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极 以及第一漏电极，设置在所述基板的第二区域的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和 第二漏电极，设置在基板的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅极电极和第二栅电极之上的氧化物层， 氧化物半导体层。

公开(公告)号：US20140139481A1

公开(公告)日：2014-05-22

申请号：US14080641

申请日：2013-11-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Jonghyun HAN ,  Byungkoo KANG ,  Dongsup KIM ,  Sohyung LEE ,  Sungyong CHO ,  Daewoong CHUN

IPC: G06F3/044

CPC classification number: G06F3/044 ,  G06F2203/04111

Abstract: A touch screen panel includes a plurality of first touch electrode serials arranged in a first direction and a plurality of second touch electrode serials arranged in a second direction crossing over the first direction, and electrically insulated from the plurality of first electrode serials. The first touch electrode serial includes a plurality of first touch electrodes connected in serial, and the second touch electrode serial includes a plurality of second touch electrodes connected in serial. The first touch electrode has a first stem portion, and a plurality of first branch portions outwardly extended from both sides of the first stem portion. The second touch electrodes has a second stem portion, and a plurality of second branch portions outwardly extended from both sides of the second stem portion.

Abstract translation: 触摸屏面板包括沿第一方向布置的多个第一触摸电极序列和沿与第一方向交叉的第二方向布置的多个第二触摸电极序列，并且与多个第一电极序列电绝缘。 第一触摸电极串联包括串联连接的多个第一触摸电极，第二触摸电极串联包括串联连接的多个第二触摸电极。 第一触摸电极具有第一杆部分和从第一杆部分的两侧向外延伸的多个第一分支部分。 第二触摸电极具有第二杆部分和从第二杆部分的两侧向外延伸的多个第二分支部分。