-
21.发明申请Magnetic random access memory with tape read line, fabricating method and circuit thereof 审中-公开具有磁带读取线的磁性随机存取存储器，其制造方法和电路公开(公告)号：US20060039189A1
公开(公告)日：2006-02-23
申请号：US11033169
申请日：2005-01-12
CPC分类号： G11C11/16
摘要： A magnetic random access memory with tape read line, fabricating method and circuit thereof is provided. The memory is composed of a top write line, a bottom write line which is vertical to the top write line, a MTJ formed on the bottom write line, a spacer formed around the MTJ, and a tape read line formed on the MTJ. The fabricating steps involves forming a bottom write line, forming a MTJ on the bottom write, and forming a tape read line on the MTJ sequentially. In the circuit, the tape read line is either parallel to or vertical to the top write line.
摘要翻译： 提供具有磁带读取线的磁性随机存取存储器，其制造方法和电路。 存储器由顶部写入线，垂直于顶部写入线的底部写入线，形成在底部写入线上的MTJ，形成在MTJ周围的间隔件和形成在MTJ上的磁带读取线组成。 制造步骤包括形成底部写入线，在底部写入上形成MTJ，并且依次在MTJ上形成带读取线。 在电路中，磁带读取线与顶部写入线并行或垂直。
-
22.发明授权Structure and method for redeposition free thin film CPP read sensor fabrication 失效无沉积薄膜CPP读取传感器制造的结构和方法公开(公告)号：US06833979B1
公开(公告)日：2004-12-21
申请号：US10176874
申请日：2002-06-21
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49044 , Y10T29/49155
摘要： The present invention provides an improved current perpendicular to the plane thin film read head device and method of fabrication. With the present invention, the lower lead is formed to inhibit accumulation of redeposited lead material on CPP sensor element side walls during CPP sensor formation. In the preferred embodiment, the upper portion of the lower lead, which normally is etched during sensor element formation, is formed of a low sputter yield material to reduce redeposition flux to the sensor side walls. It is also preferred to form the upper portion of a material that also has a low value for the ratio of its sputter yield at the lead milling angle-to-its sputter yield at the side wall milling angle to inhibit redeposition accumulation on the side wall. It is preferred to clad conventional lead material with a low sputter yield ratio, low resistivity material, to inhibit side wall redeposition accumulation while also providing a low resistance lower lead. The underlying lead material may be formed of conventional low resistance lead materials with a cladding of a refractory metal, such as tantalum, titanium, tungsten, molybdenum, zirconium, vanadium, niobium, their alloys, or the like. The improved CPP read head of the present invention may be embodied in a data storage and retrieval apparatus.
摘要翻译： 本发明提供一种垂直于平面薄膜读取头装置的改进的电流和制造方法。 利用本发明，形成下引线以在CPP传感器形成期间抑制再沉积的铅材料在CPP传感器元件侧壁上的积聚。 在优选实施例中，通常在传感器元件形成期间被蚀刻的下引线的上部由低溅射成品材料形成，以减少对传感器侧壁的再沉积通量。 还优选形成材料的上部，其在侧铣削角处的铅铣削角与其溅射产率之间的溅射产率的比值也低，以抑制侧壁上的再沉积积聚 。 优选以低的溅射成品率的低电阻率材料包覆常规的铅材料，以抑制侧壁再沉积积聚，同时还提供低电阻的低铅。 下面的铅材料可以由具有诸如钽，钛，钨，钼，锆，钒，铌，它们的合金等的难熔金属包层的常规低电阻引线材料形成。 本发明的改进的CPP读取头可以体现在数据存储和检索装置中。
-
23.发明申请Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US20090003043A1
公开(公告)日：2009-01-01
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
-
公开(公告)号：US07397694B2
公开(公告)日：2008-07-08
申请号：US11339510
申请日：2006-01-26
CPC分类号： G11C11/15
摘要： A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic memory cell. A word line provides a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell. The third writing magnetic field exceeds the fourth writing magnetic field.
摘要翻译： 磁存储阵列。 第一位线向磁存储单元提供第一写入磁场。 第二位线向参考磁存储器单元提供第二写入磁场。 字线向磁存储单元提供第三写入磁场，并向基准磁存储单元提供第四写入磁场。 第三写入磁场超过第四写入磁场。
-
25.发明授权Structure and method for redeposition free thin film CPP read sensor fabrication 有权无沉积薄膜CPP读取传感器制造的结构和方法公开(公告)号：US06433970B1
公开(公告)日：2002-08-13
申请号：US09327209
申请日：1999-06-07
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49044 , Y10T29/49155
摘要： The present invention provides an improved current perpendicular to the plane thin film read head device and method of fabrication. With the present invention, the lower lead is formed to inhibit accumulation of redeposited lead material on CPP sensor element side walls during CPP sensor formation. In the preferred embodiment, the upper portion of the lower lead, which normally is etched during sensor element formation, is formed of a low sputter yield material to reduce redeposition flux to the sensor side walls. It is also preferred to form the upper portion of a material that also has a low value for the ratio of its sputter yield at the lead milling angle-to-its sputter yield at the side wall milling angle to inhibit redeposition accumulation on the side wall. It is preferred to clad conventional lead material with a low sputter yield ratio, low resistivity material, to inhibit side wall redeposition accumulation while also providing a low resistance lower lead. The underlying lead material may be formed of conventional low resistance lead materials with a cladding of a refractory metal, such as tantalum, titanium, tungsten, molybdenum, zirconium, vanadium, niobium, their alloys, or the like. The improved CPP read head of the present invention may be embodied in a data storage and retrieval apparatus.
摘要翻译： 本发明提供一种垂直于平面薄膜读取头装置的改进的电流和制造方法。 利用本发明，形成下引线以在CPP传感器形成期间抑制再沉积的铅材料在CPP传感器元件侧壁上的积聚。 在优选实施例中，通常在传感器元件形成期间被蚀刻的下引线的上部由低溅射成品材料形成，以减少对传感器侧壁的再沉积通量。 还优选形成材料的上部，其在侧铣削角处的铅铣削角与其溅射产率之间的溅射产率的比值也低，以抑制侧壁上的再沉积积聚 。 优选以低的溅射成品率的低电阻率材料包覆常规的铅材料，以抑制侧壁再沉积积聚，同时还提供低电阻的低铅。 下面的铅材料可以由具有诸如钽，钛，钨，钼，锆，钒，铌，它们的合金等的难熔金属包层的常规低电阻引线材料形成。 本发明的改进的CPP读取头可以体现在数据存储和检索装置中。
-
公开(公告)号：US06330136B1
公开(公告)日：2001-12-11
申请号：US09173472
申请日：1998-10-14
申请人： Lien-Chang Wang , Chih-Huang Lai , Tai Min , Zhupei Shi , Billy W. Crue, Jr.
发明人： Lien-Chang Wang , Chih-Huang Lai , Tai Min , Zhupei Shi , Billy W. Crue, Jr.
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： An Spin Dependent Tumelina SDT read sensor includes a first ferromagnetic (FM) layer and a second FM layer separated by an insulating layer. The first FM layer and second FM layer are substantially electrically isolated from each other. Specifically, the sidewalls of the SDT read sensor are substantially free of electrical paths between the first FM layer and the second FM layer. Also, a surface of the second FM layer that is substantially parallel to the air bearing surface, is recessed from the air bearing surface. A method for forming an SDT read sensor includes depositing a first FM material layer, depositing an intermediate insulation material layer over the first FM material layer, and then depositing a second FM material layer over the intermediate insulation material layer. The second FM material layer and the intermediate insulation material layer are etched, with the etching being stopped before the etching etches the first FM material layer.
摘要翻译： 旋转依赖Tumelina SDT读取传感器包括由绝缘层分隔的第一铁磁（FM）层和第二FM层。 第一FM层和第二FM层基本上彼此电隔离。 具体地说，SDT读取传感器的侧壁基本上没有第一FM层和第二FM层之间的电路径。 此外，基本上平行于空气轴承表面的第二FM层的表面从空气轴承表面凹陷。 一种用于形成SDT读取传感器的方法包括沉积第一FM材料层，在第一FM材料层上沉积中间绝缘材料层，然后在中间绝缘材料层上沉积第二个FM材料层。 蚀刻第二FM材料层和中间绝缘材料层，在刻蚀蚀刻第一FM材料层之前蚀刻停止。
-
公开(公告)号：US06317290B1
公开(公告)日：2001-11-13
申请号：US09387619
申请日：1999-08-31
申请人： Lien-Chang Wang , Zhupei Shi , Syed Hossain , Billy W. Crue, Jr. , Song Pang
发明人： Lien-Chang Wang , Zhupei Shi , Syed Hossain , Billy W. Crue, Jr. , Song Pang
IPC分类号： G11B531
CPC分类号： G11B5/313 , G11B5/3116 , G11B5/3146 , G11B5/3967
摘要： A magnetoresistive head having improved overwrite performance and a small trackwidth. The magnetoresistive head having a magnetic yoke formed of first and second poles joined at a back gap region and having an opposite write gap region. A pedestal with a top portion constructed of a high saturation moment material is provided on the first pole, limited to the write gap region and spaced from the read element so as to prevent popcorn noise in read sensor. The high moment pedestal is raised above surrounding structure causing the second pole to define a very low apex angle in the write gap region.
摘要翻译： 具有改进的重写性能和小轨道宽度的磁阻头。 具有由第一和第二极形成的磁轭的磁阻磁头在后间隙区域连接并且具有相反的写入间隙区域。 具有由高饱和力矩材料构成的顶部的基座设置在第一极上，限于写入间隙区域并与读取元件间隔开，以防止读取传感器中的爆米花噪声。 高力矩基座在周围结构上方升高，导致第二极在写入间隙区域中限定非常低的顶角。
-
28.发明授权Thin film MR head and method of making wherein pole trim takes place at the wafer level 有权薄膜MR磁头及其制造方法，其中磁极修整发生在晶片级公开(公告)号：US06195229B1
公开(公告)日：2001-02-27
申请号：US09385844
申请日：1999-08-30
申请人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
发明人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
IPC分类号： G11B533
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49032 , Y10T29/49046
摘要： A method of manufacturing a thin film merged magnetic head including an inductive write structure and a magnetoresistive sensor uses a patterned protection layer to protect a second shield/bottom pole layer in regions spaced from the pole tip of the inductive write structure. A window is provided in the protection layer. During manufacture, the configuration comprises a first shield layer, a magnetoresistive element, a second shield layer serving as a bottom pole, a protection layer, a protection window, a write gap, a top pole, and a pole tip structure. The use of a protection layer and window results in the formation of channels in the second shield layer adjacent to a pedestal that supports the inductive write structure. The channels prevent magnetic flux from extending toward the second shield layer beyond the width of the pole tip structure. This structure reduces side writing with a consequent improvement in off-track performance. The width of the second shield layer allows the magnetoresistive element to be shielded.
摘要翻译： 制造包括电感写入结构和磁阻传感器的薄膜合并磁头的方法使用图案化保护层来保护与电感写入结构的磁极末端隔开的区域中的第二屏蔽/底极层。 在保护层中设置一个窗口。 在制造时，该结构包括第一屏蔽层，磁阻元件，用作底极的第二屏蔽层，保护层，保护窗，写间隙，顶极和极尖结构。 使用保护层和窗口导致在与支撑感性写入结构的基座相邻的第二屏蔽层中形成通道。 通道防止磁通量向第二屏蔽层延伸超过极端结构的宽度。 这种结构减少了侧面写入，从而改善了非轨道性能。 第二屏蔽层的宽度允许屏蔽磁阻元件。
-
29.发明授权Method for switching magnetic moment in magnetoresistive random access memory with low current 有权低电流磁阻随机存取存储器中磁矩切换的方法公开(公告)号：US07800937B2
公开(公告)日：2010-09-21
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。
-
公开(公告)号：US20080239800A1
公开(公告)日：2008-10-02
申请号：US12134686
申请日：2008-06-06
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic memory cell. A word line provides a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell. The third writing magnetic field exceeds the fourth writing magnetic field.
摘要翻译： 磁存储阵列。 第一位线向磁存储单元提供第一写入磁场。 第二位线向参考磁存储器单元提供第二写入磁场。 字线向磁存储单元提供第三写入磁场，并向基准磁存储单元提供第四写入磁场。 第三写入磁场超过第四写入磁场。
-
-
-
-
-
-
-
-
-
搜索结果
46 条记录 (耗时 0.032 秒)
