Silicon-containing layer deposition with silicon compounds
    21.
    发明申请
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号:US20070240632A1

    公开(公告)日:2007-10-18

    申请号:US11549033

    申请日:2006-10-12

    IPC分类号: C30B23/00

    摘要: Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

    摘要翻译: 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中,提供了一种用于选择性和外延沉积含硅材料的方法,其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底,将基底暴露于含有新戊硅烷的工艺气体中, 以及在所述晶体表面上沉积外延层。 在另一个实例中,提供了一种用于覆盖沉积含硅材料的方法,其包括定位和加热含有结晶表面的基底和处理室内的特征表面,并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常,碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

    Back-Contact Photovoltaic Cells
    22.
    发明申请

    公开(公告)号:US20070137692A1

    公开(公告)日:2007-06-21

    申请号:US11565738

    申请日:2006-12-01

    申请人: David Carlson

    发明人: David Carlson

    IPC分类号: H01L31/00

    摘要: A photovoltaic cell comprising a wafer comprising a semiconductor material of a first conductivity type, the wafer comprising a first light receiving surface and a second surface opposite the first surface; a first passivation layer positioned over the first surface of the wafer; a first electrical contact comprising point contacts positioned over the second surface of the wafer and having a conductivity type opposite to that of the wafer; and a second electrical contact comprising point contacts and positioned over the second surface of the wafer and separated electrically from the first electrical contact and having a conductivity type the same as that of the wafer.

    Light apparatus
    23.
    发明申请
    Light apparatus 失效
    灯光装置

    公开(公告)号:US20070091633A1

    公开(公告)日:2007-04-26

    申请号:US11542370

    申请日:2006-10-03

    IPC分类号: G02B6/00

    摘要: A light apparatus includes one or more light pipes and/or diffusers to transfer and/or diffuse light from a few point light sources to a broader area and to other points. A hollow light pipe includes a light transmissive sidewall that encompasses an interior space, which receives and hides control circuitry for the light sources therein. A bottom end surface of the hollow light pipe is disposed adjacent to one or more light sources and transmits the light therefrom over a relatively large, uniform area. A solid core light pipe has a light receiving end and a light dispersion end having a reflective facet therein. The reflective facet includes a depression forming a reflective surface angularly displaced from a longitudinal axis of the solid core light pipe. A light diffuser surrounding a point source of light is adapted to cause the point source to look like a flame. A light apparatus including the hollow light pipe and the solid core light pipe and/or the light diffuser is adapted to provide a plurality of different light effects, including a multi-color light show through the hollow light pipe and a flame flicker effect through the solid core light pipe.

    摘要翻译: 光装置包括一个或多个光管和/或扩散器,用于将来自几个点光源的光传输和/或漫射到更广泛的区域和其它点。 空心光管包括透光侧壁,其包围内部空间,其接收并隐藏其中的光源的控制电路。 中空光管的底端表面邻近一个或多个光源设置,并且在其上透过较大的均匀区域。 实芯光管具有光接收端和在其中具有反射面的光分散端。 反射小面包括形成从实芯光管的纵向轴线角度位移的反射表面的凹陷。 围绕点光源的光漫射器适于使点源看起来像火焰。 包括中空光管和实芯光管和/或光扩散器的光装置适于提供多种不同的光效果,包括通过中空光管的多色光显示和通过该中空光管的火焰闪烁效果 实芯光管。

    Thermal storage tank/base
    25.
    发明申请
    Thermal storage tank/base 失效
    储热罐/底座

    公开(公告)号:US20060266073A1

    公开(公告)日:2006-11-30

    申请号:US11415626

    申请日:2006-05-02

    IPC分类号: F25B39/04

    CPC分类号: B01D53/265 F25D23/006

    摘要: A fluid compression system includes a compressor that is operable to produce a flow of compressed fluid and a coolant compressor that is operable to produce a flow of coolant. A base includes at least one polymer wall that at least partially defines a reservoir space. The base supports the compressor and the coolant compressor. A first tube is at least partially positioned within the reservoir space and is in fluid communication with the compressor to receive the flow of compressed air and a second tube is at least partially positioned within the reservoir space and is in fluid communication with the coolant compressor to receive the flow of coolant.

    摘要翻译: 流体压缩系统包括可操作以产生压缩流体流的压缩机和可操作以产生冷却剂流的冷却剂压缩机。 基部包括至少部分限定储存空间的至少一个聚合物壁。 底座支撑压缩机和冷却剂压缩机。 第一管至少部分地定位在储存空间内并且与压缩机流体连通以接收压缩空气流,并且第二管至少部分地定位在储存空间内并与冷却剂压缩机流体连通 接收冷却液流。

    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
    26.
    发明申请
    Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权
    使用接近紫外线辐射的含硅薄膜的低温外延生长

    公开(公告)号:US20060258124A1

    公开(公告)日:2006-11-16

    申请号:US11401578

    申请日:2006-04-10

    IPC分类号: H01L21/20

    摘要: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译: 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外,生长含硅和/或含锗膜的方法,其中基板清洗方法和膜生长方法都在低于750℃的温度下进行,通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

    Method for displaying and navigating through data
    27.
    发明申请
    Method for displaying and navigating through data 审中-公开
    显示和浏览数据的方法

    公开(公告)号:US20060248446A1

    公开(公告)日:2006-11-02

    申请号:US11119186

    申请日:2005-04-29

    IPC分类号: G06F15/00

    CPC分类号: G06F16/248

    摘要: A method of displaying information is comprised of displaying a representation associated with certain information and displaying, proximate to the representation, an alphanumeric code assigned thereto. The code is comprised of one or more keystrokes needed to select the information associated with the representation. The information may be hierarchically arranged such that a plurality of representations is at the same level in the hierarchical arrangement. In that case, displaying a code may include displaying a code comprised of a common letter/number and a unique number/letter, respectively, proximate to the plurality of representations. Another aspect of the present disclosure is directed to a method of organizing information for a display wherein the information is represented in the display by a plurality of indicium. A code comprised of the input needed to select the information associated with its indicium is assigned. The assigned code is displayed proximate to the indicium representative of the information to which the code is associated. Other aspects of the present disclosure include computer readable media carrying instructions for carrying out or enabling the disclosed methods as well as computers and computer systems for carrying out or enabling the disclosed methods. Because of the rules governing abstracts, this abstract should not be used in construing the claims.

    摘要翻译: 显示信息的方法包括显示与特定信息相关联的表示,并且在表示附近显示分配给其的字母数字代码。 代码由选择与表示相关联的信息所需的一个或多个按键组成。 信息可以被分层布置,使得多个表示在分层布置中处于相同的级别。 在这种情况下,显示代码可以包括分别在接近多个表示的情况下显示包括公共字母/数字和唯一的数字/字母的代码。 本公开的另一方面涉及一种组织用于显示器的信息的方法,其中所述信息由多个标记在显示器中表示。 分配由选择与其标记相关联的信息所需的输入的代码。 分配的代码显示在与代码相关联的信息的标记代表附近。 本公开的其他方面包括携带用于执行或实现所公开的方法的指令的计算机可读介质,以及用于执行或实现所公开的方法的计算机和计算机系统。 由于管理摘要的规则,本摘要不应用于解释索赔。

    Lightweight member for reinforcing, sealing or baffling
    29.
    发明授权
    Lightweight member for reinforcing, sealing or baffling 失效
    用于加强,密封或挡板的轻型构件

    公开(公告)号:US07105112B2

    公开(公告)日:2006-09-12

    申请号:US10686845

    申请日:2003-10-16

    IPC分类号: B29C44/06

    摘要: A lightweight member is provided for reinforcing, sealing or baffling structures of articles of manufacture such as automotive vehicles. The lightweight member preferably includes a carrier member having a cellular structure and an expandable material disposed thereon.

    摘要翻译: 提供了一种重量轻的构件,用于制造诸如机动车辆的加强,密封或挡板结构。 轻质构件优选地包括具有多孔结构的载体构件和设置在其上的可膨胀材料。

    Low temperature epitaxial growth of silicon-containing films using UV radiation
    30.
    发明申请
    Low temperature epitaxial growth of silicon-containing films using UV radiation 失效
    使用紫外线辐射的含硅薄膜的低温外延生长

    公开(公告)号:US20050277272A1

    公开(公告)日:2005-12-15

    申请号:US10866471

    申请日:2004-06-10

    摘要: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

    摘要翻译: 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外,生长含硅和/或含锗膜的方法,其中基板清洗方法和膜生长方法都在低于750℃的温度下进行,通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。