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1.发明申请公开(公告)号：US20070232031A1
公开(公告)日：2007-10-04
申请号：US11805428
申请日：2007-05-22
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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2.发明申请Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权使用接近紫外线辐射的含硅薄膜的低温外延生长公开(公告)号：US20060258124A1
公开(公告)日：2006-11-16
申请号：US11401578
申请日：2006-04-10
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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3.发明申请Low temperature epitaxial growth of silicon-containing films using UV radiation 失效使用紫外线辐射的含硅薄膜的低温外延生长公开(公告)号：US20050277272A1
公开(公告)日：2005-12-15
申请号：US10866471
申请日：2004-06-10
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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公开(公告)号：US20070240632A1
公开(公告)日：2007-10-18
申请号：US11549033
申请日：2006-10-12
申请人： Kaushal Singh , Paul Comita , Lance Scudder , David Carlson
发明人： Kaushal Singh , Paul Comita , Lance Scudder , David Carlson
IPC分类号： C30B23/00
CPC分类号： C07F7/0896 , C01B33/04 , C01B33/107 , C07F7/12 , C23C16/24 , C23C16/30
摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.
摘要翻译： 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中， 以及在所述晶体表面上沉积外延层。 在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。
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5.发明申请METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS 审中-公开曝光沉积过程中形成含硅材料的方法公开(公告)号：US20060286774A1
公开(公告)日：2006-12-21
申请号：US11425342
申请日：2006-06-20
申请人： Kaushal Singh , Sean Seutter
发明人： Kaushal Singh , Sean Seutter
IPC分类号： H01L21/20
CPC分类号： C23C16/308 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , C30B25/02 , C30B29/06 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02277 , H01L21/02301 , H01L21/0231 , H01L21/02348 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/3121 , H01L21/3143 , H01L21/31612 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
摘要翻译： 本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜或层的方法。 膜沉积在基底上，通常包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。 光致激化过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。 因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。 通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。
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公开(公告)号：US20070252299A1
公开(公告)日：2007-11-01
申请号：US11413658
申请日：2006-04-27
IPC分类号： C23C16/01
CPC分类号： C23C16/45546 , C23C16/4584
摘要： A method for synchronizing the rotation of a substrate boat with material deposition is disclosed. Whenever support rods of the substrate boat rotate past a deposition source, they will block deposition gas from reaching certain portions of the substrate. By stopping the deposition gas whenever the support rods are located between the substrate and the deposition source, a uniform deposition can be achieved.
摘要翻译： 公开了一种使衬底舟的旋转与材料沉积同步的方法。 每当衬底舟的支撑杆旋转经过沉积源时，它们将阻挡沉积气体到达衬底的某些部分。 每当支撑杆位于基板和沉积源之间时，通过停止沉积气体，可以实现均匀的沉积。
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公开(公告)号：US20060286820A1
公开(公告)日：2006-12-21
申请号：US11157567
申请日：2005-06-21
申请人： Kaushal Singh , Sean Seutter , Jacob Smith , R. Iyer , Steve Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
发明人： Kaushal Singh , Sean Seutter , Jacob Smith , R. Iyer , Steve Ghanayem , Adam Brailove , Robert Shydo , Jeannot Morin
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , H01L21/0228 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
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8.发明申请公开(公告)号：US20060286776A1
公开(公告)日：2006-12-21
申请号：US11425346
申请日：2006-06-20
申请人： Joseph Ranish , Kaushal Singh
发明人： Joseph Ranish , Kaushal Singh
IPC分类号： H01L21/20
CPC分类号： C23C16/308 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , C30B25/02 , C30B29/06 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02277 , H01L21/02301 , H01L21/0231 , H01L21/02348 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/3121 , H01L21/3143 , H01L21/31612 , H01L21/3185 , Y10S438/905
摘要： Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
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公开(公告)号：US06730354B2
公开(公告)日：2004-05-04
申请号：US09925223
申请日：2001-08-08
IPC分类号： C23C1640
CPC分类号： C23C16/409 , H01L21/31691 , Y10S427/101
摘要： Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.
摘要翻译： 描述了与工业标准化学气相沉积生产技术相容的形成PZT薄膜的改进方法。 这些方法使得厚度为70nm以下的PZT薄膜能够制造成具有高的晶片内均匀性，高产量和较低的沉积温度。 一方面，提供了在溶剂介质中包含铅前体，钛前体和锆前体的混合物的源试剂溶液。 源试剂溶液蒸发以形成前体蒸气。 将前体蒸气引入含有基材的化学气相沉积室中。 另一方面，在沉积之前，在预热期间预热衬底。 在预热期间之后，在加热时间内将衬底设置在加热的基座上，之后在被加热的衬底上形成PZT膜。
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10.发明申请公开(公告)号：US20070252500A1
公开(公告)日：2007-11-01
申请号：US11380553
申请日：2006-04-27
申请人： Joseph Ranish , Kaushal Singh , Bruce Adams
发明人： Joseph Ranish , Kaushal Singh , Bruce Adams
CPC分类号： H01L21/67115 , H01J65/00 , H01J65/046
摘要： A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.
摘要翻译： 提供具有介电阻挡放电（DBD）灯组件的热处理室及其使用方法。 在一个实施例中，热处理室包括室主体和电介质阻挡放电灯组件。 电介质阻挡放电灯组件还包括第一电极，第二电极和电介质阻挡层。 电介质阻挡放电灯组件位于第一电极和第二电极之间。 电介质阻挡层限定介电阻挡层和第二电极之间的放电空间。 电路布置耦合到第一和第二电极，并且适于操作介电阻挡放电灯组件。
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