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1.发明申请公开(公告)号：US20070232031A1
公开(公告)日：2007-10-04
申请号：US11805428
申请日：2007-05-22
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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2.发明申请Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权使用接近紫外线辐射的含硅薄膜的低温外延生长公开(公告)号：US20060258124A1
公开(公告)日：2006-11-16
申请号：US11401578
申请日：2006-04-10
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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3.发明申请Low temperature epitaxial growth of silicon-containing films using UV radiation 失效使用紫外线辐射的含硅薄膜的低温外延生长公开(公告)号：US20050277272A1
公开(公告)日：2005-12-15
申请号：US10866471
申请日：2004-06-10
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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4.发明授权Low temperature epitaxial growth of silicon-containing films using UV radiation 失效使用紫外线辐射的含硅薄膜的低温外延生长公开(公告)号：US07396743B2
公开(公告)日：2008-07-08
申请号：US10866471
申请日：2004-06-10
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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5.发明授权Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation 有权使用接近紫外线辐射的含硅薄膜的低温外延生长公开(公告)号：US07262116B2
公开(公告)日：2007-08-28
申请号：US11401578
申请日：2006-04-10
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C23C16/482 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02661
摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。
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6.发明申请公开(公告)号：US20070042117A1
公开(公告)日：2007-02-22
申请号：US11205647
申请日：2005-08-17
申请人： Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译： 公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法，系统和装置。 腔表面的多于一个部分可以进行温度调制。
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7.发明申请公开(公告)号：US20080022751A1
公开(公告)日：2008-01-31
申请号：US11830832
申请日：2007-07-30
申请人： David Carlson , Satheesh Kuppurao
发明人： David Carlson , Satheesh Kuppurao
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。
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公开(公告)号：US20060166414A1
公开(公告)日：2006-07-27
申请号：US11378101
申请日：2006-03-17
IPC分类号： H01L21/84 , H01L21/8238 , H01L21/336 , H01L21/20 , H01L21/31
CPC分类号： H01L29/7834 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/76243 , H01L21/823814 , H01L21/8249 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7848 , Y10S438/969
摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.
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公开(公告)号：US20080014350A1
公开(公告)日：2008-01-17
申请号：US11697937
申请日：2007-04-09
申请人： David Carlson , Errol Sanchez , Satheesh Kuppurao
发明人： David Carlson , Errol Sanchez , Satheesh Kuppurao
IPC分类号： C23C16/00
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。
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10.发明申请Methods for in-situ generation of reactive etch and growth specie in film formation processes 有权在膜形成过程中原位产生反应性蚀刻和生长物质的方法公开(公告)号：US20070170148A1
公开(公告)日：2007-07-26
申请号：US11336178
申请日：2006-01-20
IPC分类号： B44C1/22 , H01L21/302 , H01L21/461 , C03C15/00
CPC分类号： H01L21/02532 , C23C16/452 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/0262 , H01L21/02636
摘要： Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
摘要翻译： 公开了用于在处理衬底的反应室中形成和利用亚稳态物质的方法和装置。 亚稳态物质可用于原位蚀刻衬底表面，在衬底加工过程中沉积过程。
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