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公开(公告)号：US20210263429A1
公开(公告)日：2021-08-26
申请号：US17314410
申请日：2021-05-07
Applicant: Micron Technology, Inc.
Inventor： Nikolay A. Mirin , Robert Dembi , Richard T. Housley , Xiaosong Zhang , Jonathan D. Harms , Stephen J. Kramer
IPC: G03F7/20 , H01L21/68 , G01R33/07 , H01L23/544
Abstract: A method of aligning a wafer for semiconductor fabrication processes may include applying a magnetic field to a wafer, detecting one or more residual magnetic fields from one or more alignment markers within the wafer, responsive to the detected one or more residual magnetic fields, determining locations of the one or more alignment markers. The marker locations may be determined relative to an ideal grid, followed by determining a geometrical transformation model for aligning the wafer, and aligning the wafer responsive to the geometrical transformation model. Related methods and systems are also disclosed.
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公开(公告)号：US20210090681A1
公开(公告)日：2021-03-25
申请号：US16580972
申请日：2019-09-24
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman
Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US10957416B2
公开(公告)日：2021-03-23
申请号：US16276489
申请日：2019-02-14
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms
Abstract: Methods and apparatus for using characterized devices such as memories. In one embodiment, characterized memories are associated with a range of performances over a range of operational parameters. The characterized memories can be used in conjunction with a solution density function to optimize memory searching. In one exemplary embodiment, a cryptocurrency miner can utilize characterized memories to generate memory hard proof-of-work (POW). The results may be further validated against general compute memories; such that only valid solutions are broadcasted to the mining community. In one embodiment, the validation mechanism is implemented for a plurality of searching apparatus in parallel to provide a more distributed and efficient approach.
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公开(公告)号：US20200075432A1
公开(公告)日：2020-03-05
申请号：US16122106
申请日：2018-09-05
Applicant: Micron Technology, Inc.
Inventor： Nikolay A. Mirin , Robert Dembi , Richard T. Housley , Xiaosong Zhang , Jonathan D. Harms , Stephen J. Kramer
IPC: H01L21/66 , H01L23/544 , H01L21/68 , H01L21/302
Abstract: A method for measuring overlay between an interest level and a reference level of a wafer includes applying a magnetic field to a wafer, detecting at least one residual magnetic field emitted from at least one registration marker of a first set of registration markers within the wafer, responsive to the detected one or more residual magnetic fields, determining a location of the at least one registration marker of the first set registration markers, determining a location of at least one registration marker of a second set of registration markers, and responsive to the respective determined locations of the at least one registration marker of the first set of registration markers and the at least one registration marker of the second set of registration markers, calculating a positional offset between an interest level of the wafer and a reference level of the wafer. Related methods and systems are also disclosed.
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公开(公告)号：US10374149B2
公开(公告)日：2019-08-06
申请号：US16006588
申请日：2018-06-12
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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Patent Agency Ranking
公开(公告)号：US09768377B2
公开(公告)日：2017-09-19
申请号：US14558367
申请日：2014-12-02
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Jonathan D. Harms , Sunil Murthy
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.
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公开(公告)号：US09680089B1
公开(公告)日：2017-06-13
申请号：US15154033
申请日：2016-05-13
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Manzar Siddik , Suresh Ramarajan , Jonathan D. Harms
CPC classification number: H01L43/02 , G11C11/161 , H01L27/224 , H01L43/08 , H01L43/10
Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.
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公开(公告)号：US09478735B1
公开(公告)日：2016-10-25
申请号：US14746421
申请日：2015-06-22
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
Abstract: Some embodiments include a magnetic tunnel junction which has a conductive first magnetic electrode containing magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and containing magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic recording material of the first electrode includes a set having an iridium-containing region between a pair of non-iridium-containing regions. In some embodiments, the non-iridium-containing regions are cobalt-containing regions.
Abstract translation: 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁性电极，与第一电极间隔开并包含磁性参考材料的导电第二磁性电极以及第一和第二电极之间的非磁性绝缘体材料。 第一电极的磁记录材料包括在一对非含铱区域之间具有含铱区域的组。 在一些实施方案中，非含铱的区域是含钴区域。
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公开(公告)号：US09373779B1
公开(公告)日：2016-06-21
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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公开(公告)号：US20160163967A1
公开(公告)日：2016-06-09
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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