-
公开(公告)号：US10017850B2
公开(公告)日：2018-07-10
申请号：US14908346
申请日：2014-07-25
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Yuuki Yoshida , Kouichi Ishiyama , Satoru Mori
CPC classification number: C23C14/3414 , B22F3/16 , B22F5/00 , B22F2201/01 , B22F2301/10 , B22F2302/45 , B22F2303/01 , B22F2303/15 , B22F2304/10 , C22C1/0425 , C22C9/00 , C22C32/00 , C23C14/14 , H01J37/3429
Abstract: The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a γ phase and a ζ phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the γ phase is 30 μm to 100 μm, and an average grain size of the Na compound phases is equal to or less than 8.5 μm.
-
22.发明申请公开(公告)号：US20170213711A1
公开(公告)日：2017-07-27
申请号：US15480733
申请日：2017-04-06
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Satoru Mori , Toshio Sakamoto , Kiyoyuki Ookubo
CPC classification number: H01J37/3429 , B22D7/005 , B22D11/004 , B22D11/108 , C22C1/02 , C22C9/00 , C22F1/08 , C23C14/3414 , H01J37/3491
Abstract: A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting theCa; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.
-
23.发明授权公开(公告)号：US09543128B2
公开(公告)日：2017-01-10
申请号：US14090203
申请日：2013-11-26
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Satoru Mori , Souhei Nonaka
CPC classification number: H01J37/3426 , H05K1/09 , H05K3/022 , H05K3/06 , H05K2201/0317 , H05K2201/0338 , Y10T428/1291
Abstract: A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.
Abstract translation: 根据本发明的用于形成保护膜的溅射靶用于在Cu布线膜的一个表面或两个表面上形成保护膜，并且包括8.0至11.0质量％的Al，3.0至5.0质量％的Fe，0.5 至2.0质量％的Ni和0.5〜2.0质量％的Mn，余量为Cu和不可避免的杂质。 此外，层叠布线膜包括Cu布线膜和形成在Cu布线膜的一个表面或两个表面上的保护膜，并且通过使用上述溅射靶形成保护膜。
-
公开(公告)号：US20150060269A1
公开(公告)日：2015-03-05
申请号：US14470074
申请日：2014-08-27
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Satoru Mori , Toshio Sakamoto , Kiyoyuki Ookubo
CPC classification number: C23C14/3414 , C22C1/0425 , C22C9/00 , H01J37/3426
Abstract: A copper alloy sputtering target is made of a copper alloy having a composition containing Ca in a range of 0.3 mass % to 1.7 mass % with a remainder of Cu and inevitable impurities, a Ca-segregated phase (10) in which Ca is segregated is dispersed in a matrix phase, and the Ca-segregated phase contains a Cu-dispersed phase (11) made of Cu.
Abstract translation: 铜合金溅射靶由Ca合金组成，其中Ca含量为0.3质量％至1.7质量％的Ca，其余为Cu和不可避免的杂质，Ca分离的Ca分离相（10）为 分散在基质相中，Ca分离相含有由Cu构成的Cu分散相（11）。
-
Patent Agency Ranking
公开(公告)号：US20130214412A1
公开(公告)日：2013-08-22
申请号：US13767125
申请日：2013-02-14
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Satoru Mori
IPC: H01L21/768 , H01L23/52
CPC classification number: H01L21/76861 , H01L21/32051 , H01L23/52 , H01L23/53233 , H01L27/124 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a thin film interconnect in which a film is formed by sputtering method using a Cu—Ca alloy target and a thin film interconnect formed by the method, the method comprising: forming a Cu—Ca alloy film by sputtering method using a Cu—Ca alloy target that contains 0.5 atomic % or more and less than 5 atomic % of Ca, and the balance consisting of Cu and unavoidable impurities; and performing heat treatment of the Cu—Ca alloy film at a temperature of 300 to 700° C. in an inert gas atmosphere containing trace amount of oxygen defined by oxygen partial pressure in the range of 10−4 to 10−10 atm.
Abstract translation: 一种形成薄膜互连的方法，其中通过使用Cu-Ca合金靶的溅射法和通过该方法形成的薄膜互连形成膜，所述方法包括：通过溅射方法形成Cu-Ca合金膜，使用 Cu-Ca合金靶，其含有0.5原子％以上且小于5原子％的Ca，余量由Cu和不可避免的杂质构成; 并在氧分压范围为10 -4〜10〜10大气压的含有微量氧气的惰性气体气氛中，在300〜700℃的温度下进行Cu-Ca合金膜的热处理。
-
26.发明申请公开(公告)号：US20190040524A1
公开(公告)日：2019-02-07
申请号：US16071659
申请日：2017-01-12
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Yuki Yoshida , Toshiaki Ueda , Satoru Mori
Abstract: Provided is a method of manufacturing a Cu—Ga alloy sputtering target made of a Cu—Ga alloy with a hollow portion, the method including: a calcining step of forming a calcined material by charging a raw material powder that includes at least a Cu—Ga alloy powder into a mold that includes a core and heating the raw material powder in a reducing atmosphere; and a main sintering step of forming a sintered material by removing the core from the calcined material and heating the calcined material in a reducing atmosphere, in which the core used in the calcining step is made of a material having a higher linear thermal expansion coefficient than a Cu—Ga alloy constituting theCu—Ga alloy sputtering target, and the calcined material is formed by holding the raw material powder at a temperature of 100-600° C. for 10 minutes to 10 hours in the calcining step.
-
公开(公告)号：US09748080B2
公开(公告)日：2017-08-29
申请号：US15113210
申请日：2014-11-18
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Yuuki Yoshida , Kouichi Ishiyama , Satoru Mori
CPC classification number: H01J37/3429 , B22F1/0003 , B22F1/0011 , B22F3/10 , B22F3/24 , B22F2201/01 , B22F2302/45 , B22F2998/10 , C22C1/0425 , C22C1/0491 , C22C9/00 , C23C14/3414 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
Abstract: According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which γ phase particles are dispersed in a γ1-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.
-
公开(公告)号：US20170011895A1
公开(公告)日：2017-01-12
申请号：US15113210
申请日：2014-11-18
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor： Yuuki Yoshida , Kouichi Ishiyama , Satoru Mori
CPC classification number: H01J37/3429 , B22F1/0003 , B22F1/0011 , B22F3/10 , B22F3/24 , B22F2201/01 , B22F2302/45 , B22F2998/10 , C22C1/0425 , C22C1/0491 , C22C9/00 , C23C14/3414 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
Abstract: According to the present invention, a Cu—Ga alloy sputtering target which is a sintered body has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance of Cu and inevitable impurities. A Cu—Ga alloy crystal particle in the sintered body has a structure in which γ phase particles are dispersed in a γ1-phase crystal particle. A method for producing the sputtering target includes a step of performing normal pressure sintering by heating a molded body formed of a powder mixture of a pure Cu powder and a Cu—Ga alloy powder in a reducing atmosphere, and a step of cooling the obtained sintered body at a cooling rate of 0.1° C./min to 1.0° C./min, at a temperature having a range of 450° C. to 650° C.
Abstract translation: 根据本发明，作为烧结体的Cu-Ga合金溅射靶具有29.5原子％至43.0原子％的Ga和余量的Cu和不可避免的杂质的组成。 烧结体中的Cu-Ga合金结晶粒子具有γ相粒子分散在γ1相晶体中的结构。 溅射靶的制造方法包括在还原气氛中加热由纯Cu粉末和Cu-Ga合金粉末的粉末混合物形成的成型体进行常压烧结的工序，以及将得到的烧结体 身体以0.1℃/分钟至1.0℃/分钟的冷却速度，在450℃至650℃的温度下进行。
-
公开(公告)号：US08796144B2
公开(公告)日：2014-08-05
申请号：US13767125
申请日：2013-02-14
Applicant: Mitsubishi Materials Corporation
Inventor： Satoru Mori
IPC: H01L21/44
CPC classification number: H01L21/76861 , H01L21/32051 , H01L23/52 , H01L23/53233 , H01L27/124 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a thin film interconnect in which a film is formed by sputtering method using a Cu—Ca alloy target and a thin film interconnect formed by the method, the method comprising: forming a Cu—Ca alloy film by sputtering method using a Cu—Ca alloy target that contains 0.5 atomic % or more and less than 5 atomic % of Ca, and the balance consisting of Cu and unavoidable impurities; and performing heat treatment of the Cu—Ca alloy film at a temperature of 300 to 700° C. in an inert gas atmosphere containing trace amount of oxygen defined by oxygen partial pressure in the range of 10−4 to 10−10 atm.
Abstract translation: 一种形成薄膜互连的方法，其中通过使用Cu-Ca合金靶的溅射法和通过该方法形成的薄膜互连形成膜，所述方法包括：通过溅射方法形成Cu-Ca合金膜，使用 Cu-Ca合金靶，其含有0.5原子％以上且小于5原子％的Ca，余量由Cu和不可避免的杂质构成; 并在氧分压范围为10 -4〜10〜10大气压的含有微量氧气的惰性气体气氛中，在300〜700℃的温度下进行Cu-Ca合金膜的热处理。
-
-
-
-
-
-
-
-
Search Results
29
records
(took 0.039 seconds)
