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    Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate and laser radiation for materials used to form the same
    21.
    发明申请
    Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate and laser radiation for materials used to form the same 审中-公开
    用于制造半导体结构的装置和方法，利用形成柔性衬底的激光辐射和用于形成柔性衬底的材料

    公开(公告)号：US20030008527A1

    公开(公告)日：2003-01-09

    申请号：US09897128

    申请日：2001-07-03

    Applicant: MOTOROLA, INC.

    Inventor： Barbara Foley Barenburg ,  Lyndee L. Hilt

    IPC: H01L021/31 ,  H01L021/469

    CPC classification number: C30B25/18 ,  C30B23/02 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02631

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing laser irradiation in conjunction with molecular beam epitaxy growth techniques.

    Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括结合分子束外延生长技术利用激光照射。

    Semiconductor structure including a monocrystalline film, device including the structure, and methods of forming the structure and device
    23.
    发明申请
    Semiconductor structure including a monocrystalline film, device including the structure, and methods of forming the structure and device 审中-公开
    包括单晶膜的半导体结构，包括该结构的器件，以及形成该结构和器件的方法

    公开(公告)号：US20020076906A1

    公开(公告)日：2002-06-20

    申请号：US09740268

    申请日：2000-12-18

    Applicant: Motorola, Inc.

    Inventor： Lyndee L. Hilt ,  Jamal Ramdani

    IPC: H01L021/425

    CPC classification number: H01L21/02521 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02546

    Abstract: High quality epitaxial layers (34) of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers (34). One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22), growing a thin monocrystalline layer (26) of material over the buffer layer (24), and exposing the buffer layer (24) to an anneal process to form an amorphous layer (32) capped with the monocrystalline material (26). The accommodating buffer layer (24) is lattice matched to both the underlying silicon wafer (22) and the overlying monocrystalline material layer (26). In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

    Abstract translation: 通过形成用于生长单晶层（34）的柔性衬底，可以将单晶材料的高质量外延层（34）生长在覆盖单晶衬底（22），例如大硅晶片上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24），在缓冲层（24）上生长薄的单晶层（26），并使缓冲层 层（24）到退火工艺以形成用单晶材料（26）封盖的非晶层（32）。 容纳缓冲层（24）与下面的硅晶片（22）和上覆的单晶材料层（26）晶格匹配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

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