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公开(公告)号:US10162751B2
公开(公告)日:2018-12-25
申请号:US15139252
申请日:2016-04-26
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Kuen-Long Chang , Ken-Hui Chen , Chin-Hung Chang
IPC: G06F12/06
Abstract: A nested wrap-around technology includes an address counter and associated logic for generating addresses to perform a nested wrap-around access operation. The nested wrap-around access operation may be a read or a write operation. A wrap-around section length and a wrap-around count define a wrap-around block. A wrap starting address, initially set to a supplied start address, is offset from a lower boundary of a wrap-around section. Access starts at a wrap starting address and proceeds in a wrap-around manner within a wrap-around section. After access of the address immediately preceding the wrap starting address, the wrap starting address is incremented by the wrap-around section length, or, if the wrap-around section is the last one in the wrap-around block, the wrap starting address is set to the lower boundary of the wrap-around block plus the offset. Access continues until a termination event.
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公开(公告)号:US09535785B2
公开(公告)日:2017-01-03
申请号:US14158613
申请日:2014-01-17
Applicant: Macronix International Co., Ltd.
Inventor: Nai-Ping Kuo , Shih-Chang Huang , Chin-Hung Chang , Ken-Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
CPC classification number: G06F11/1048 , G06F2212/1036 , G11C16/3436
Abstract: A method of operating a memory storing data sets, and ECCs for the data sets is provided. The method includes when writing new data in a data set, computing and storing an ECC, if a number of addressable segments storing the new data and data previously programmed in the data set includes at least a predetermined number of addressable segments. The method includes storing indications for whether to enable or disable use of the ECCs, using the ECC and a first additional ECC bit derived from the ECC. The method includes reading from a data set an extended ECC including an ECC and a first additional ECC bit derived from the ECC, and enabling or disabling use of the ECC according to the indications stored for the data set. The method includes enabling use of ECCs for blank data sets, using the indications and a second additional ECC bit.
Abstract translation: 提供了一种操作存储数据集的存储器和数据集的ECC的方法。 如果存储新数据的多个可寻址段和先前在数据集中编程的数据包括至少预定数量的可寻址段,则该方法包括在将新数据写入数据集时,计算和存储ECC。 该方法包括使用ECC和从ECC导出的第一附加ECC比特来存储是否启用或禁止使用ECC的指示。 该方法包括从数据集读取包括ECC的扩展ECC和从ECC导出的第一附加ECC位,以及根据为数据集存储的指示启用或禁用ECC的使用。 该方法包括使用所述指示和第二附加ECC位使能ECC空白数据集。
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公开(公告)号:US20150323946A1
公开(公告)日:2015-11-12
申请号:US14274237
申请日:2014-05-09
Applicant: Macronix International Co., Ltd.
Inventor: Kuen-Long Chang , Ken-Hui Chen , Chin-Hung Chang , Chao-Hsin Lin
IPC: G05F1/46
Abstract: An integrated circuit device includes a pad adapted to receive a signal from an external driver. A state register is programmed with a state that indicates a voltage level to set for the pad during initialization of circuitry on the integrated circuit device responsive to the state for the pad. The voltage level may correspond to a logic low level or a logic high level. A voltage holding circuit is coupled to the pad and the state register, and is configured to force the pad to the voltage level in response to an event that causes the initialization.
Abstract translation: 集成电路器件包括适于从外部驱动器接收信号的焊盘。 状态寄存器被编程为响应于该焊盘的状态而指示在集成电路器件的电路初始化期间为焊盘设置的电压电平的状态。 电压电平可以对应于逻辑低电平或逻辑高电平。 电压保持电路耦合到焊盘和状态寄存器,并且被配置为响应于引起初始化的事件而迫使焊盘达到电压电平。
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公开(公告)号:US20150205666A1
公开(公告)日:2015-07-23
申请号:US14160612
申请日:2014-01-22
Applicant: Macronix International Co., Ltd.
Inventor: Chin-Hung Chang , Chia-Feng Cheng , Yu-Chen Wang , Ken-Hui Chen , Kuen-Long Chang
CPC classification number: G06F11/1044 , G06F11/1068 , G06F11/1076 , G06F2212/403 , G11C11/5635 , G11C16/00 , G11C16/14 , G11C16/16 , G11C16/3404 , G11C29/42
Abstract: An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.
Abstract translation: 提供了一种存储器件的擦除方法。 存储器件包括存储器控制器和具有第一存储器区域和第二存储器区域的存储器阵列。 第一存储器区域和第二存储器区域共享相同的阱。 擦除方法包括以下步骤:擦除第一存储区; 以及根据纠错码算法有选择地对第二存储区进行编程。
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公开(公告)号:US20150205665A1
公开(公告)日:2015-07-23
申请号:US14158613
申请日:2014-01-17
Applicant: Macronix International Co., Ltd.
Inventor: Nai-Ping Kuo , Shih-Chang Huang , Chin-Hung Chang , Ken-Hui Chen , Kuen-Long Chang , Chun-Hsiung Hung
IPC: G06F11/10
CPC classification number: G06F11/1048 , G06F2212/1036 , G11C16/3436
Abstract: A method of operating a memory storing data sets, and ECCs for the data sets is provided. The method includes when writing new data in a data set, computing and storing an ECC, if a number of addressable segments storing the new data and data previously programmed in the data set includes at least a predetermined number of addressable segments. The method includes storing indications for whether to enable or disable use of the ECCs, using the ECC and a first additional ECC bit derived from the ECC. The method includes reading from a data set an extended ECC including an ECC and a first additional ECC bit derived from the ECC, and enabling or disabling use of the ECC according to the indications stored for the data set. The method includes enabling use of ECCs for blank data sets, using the indications and a second additional ECC bit.
Abstract translation: 提供了一种操作存储数据集的存储器和数据集的ECC的方法。 如果存储新数据的多个可寻址段和先前在数据集中编程的数据包括至少预定数量的可寻址段,则该方法包括在将新数据写入数据集时,计算和存储ECC。 该方法包括使用ECC和从ECC导出的第一附加ECC比特来存储是否启用或禁止使用ECC的指示。 该方法包括从数据集读取包括ECC的扩展ECC和从ECC导出的第一附加ECC位,以及根据为数据集存储的指示启用或禁用ECC的使用。 该方法包括使用所述指示和第二附加ECC位使能ECC空白数据集。
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公开(公告)号:US20140376311A1
公开(公告)日:2014-12-25
申请号:US14451166
申请日:2014-08-04
Applicant: Macronix International Co., Ltd.
Inventor: Chun-Hsiung Hung , Kuen-Long Chang , Ken-Hui Chen , Nai-Ping Kuo , Chin-Hung Chang , Chang-Ting Chen
CPC classification number: G11C16/16 , G11C16/0483 , G11C16/14 , G11C29/34 , G11C2029/2602
Abstract: A nonvolatile memory array has a multiple erase procedures of different durations. A block of memory cells of the array can be erased by one of the different erase procedures.
Abstract translation: 非易失性存储器阵列具有不同持续时间的多个擦除过程。 可以通过不同的擦除过程之一来擦除阵列的存储器单元的块。
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公开(公告)号:US12197745B2
公开(公告)日:2025-01-14
申请号:US17817711
申请日:2022-08-05
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chin-Hung Chang , Chia-Jung Chen , Ken-Hui Chen , Chun-Hsiung Hung
IPC: G06F3/06
Abstract: A memory device and an associated control method are provided. The memory device includes a non-volatile memory array and a memory control circuit. The non-volatile memory array includes M secured memory zones. The memory control circuit is electrically connected to the non-volatile memory array. The memory control circuit provides a set of mapping information and searches a request key in the set of mapping information. The set of mapping information represents correspondences between N access keys and the M secured memory zones. The memory control circuit acquires at least one of the M secured memory zones if the request key is one of the N access keys, and performs an access command to the at least one of the M secured memory zones. M and N are positive integers.
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公开(公告)号:US11258599B2
公开(公告)日:2022-02-22
申请号:US16793986
申请日:2020-02-18
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Chun-Hsiung Hung , Kuen-Long Chang , Ken-Hui Chen , Shih-Chang Huang , Chin-Hung Chang , Chen-Chia Fan
IPC: H04L9/08 , H04L9/32 , G06F21/62 , G06F3/06 , G06F12/0877
Abstract: A system and method use a physical unclonable function in a PUF circuit on an integrated circuit to generate a security key, and stabilize the security key by storage in a set of nonvolatile memory cells. The stabilized security key is moved from the set of nonvolatile memory cells to a cache memory, and utilized as stored in the cache memory in a security protocol. Also, data transfer from the PUF circuit to the set of nonvolatile memory cells can be disabled after using the PUF circuit to produce the security key, at a safe time, such as after the security key has been moved from the set of nonvolatile memory cells to the cache memory.
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公开(公告)号:US10809925B2
公开(公告)日:2020-10-20
申请号:US16259268
申请日:2019-01-28
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Ken-Hui Chen , Kuen-Long Chang , Chin-Hung Chang , Yu-Chen Wang
Abstract: A memory device comprises a memory array with I/O path and security circuitry coupled to the I/O path of the memory array. The memory device comprises control circuitry, responsive to configuration data, to invoke the security circuitry. The memory device comprises a configuration store, storing the configuration data accessible by the control circuitry to specify location and size of a security memory region in the memory array. Responsive to an external command and the configuration data, the control circuitry can be configured to invoke the security circuitry on an operation specified in the external command in response to accesses into the security memory region, or to not invoke the security circuitry in response to accesses to outside the security memory region.
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公开(公告)号:US20200057575A1
公开(公告)日:2020-02-20
申请号:US15998456
申请日:2018-08-15
Applicant: Macronix International Co., Ltd.
Inventor: Chia-Jung Chen , Chin-Hung Chang , Ken-Hui Chen
IPC: G06F3/06
Abstract: A multi-chip package, a controlling method of the multi-chip package and a security chip are provided. The multi-chip package includes a memory chip and a security chip. The security chip is coupled between the memory chip and a host. The security chip includes a processing circuit. The processing circuit is for enabling a security path to input an input-output signal into the processing circuit for executing a security procedure and accessing the memory chip, if a command is received by the processing circuit and the command includes a security requirement.
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