Abstract:
A configurable clock circuit on an integrated circuit, such as an integrated circuit memory, can be configured to utilize external multiple phase clocks and external single phase clocks to produce an internal clock signal in a form compatible with the integrated circuit.
Abstract:
A flash memory and a writing method thereof are provided. The flash memory includes a plurality of memory blocks and a plurality of multiplex circuits. The memory blocks are arranged into a plurality of memory banks. Each of the memory blocks transmits a plurality of erase voltages or a plurality of program voltages to the corresponding memory bank for executing an erase operation or a program operation. The program operation is executed by one of the memory banks while the erase operation is executed by another one of the memory banks according to a programming while erasing instruction.
Abstract:
A non-volatile memory device includes a memory core storing data to be output from the memory core according to an external clock signal, an input buffer receiving the external clock signal and providing an input clock signal, and a synchronization circuit including a delay circuit and configured to receive the input clock signal, provide an output clock signal, and synchronize the output clock signal to the external clock signal. The device further includes a data strobe output buffer receiving the output clock signal and providing a data strobe signal having a signal delay configurable relative to the external clock signal, a clocked circuit element receiving the data and the output clock signal and outputting the data in synchronism with the output clock signal, and a delay control circuit providing a delay control signal to the delay circuit to modify the signal delay of the data strobe signal.
Abstract:
A nonvolatile memory array has a multiple erase procedures of different durations. A block of memory cells of the array can be erased by one of the different erase procedures.
Abstract:
A nonvolatile memory array has a multiple erase procedures of different durations. A block of memory cells of the array can be erased by one of the different erase procedures.