公开(公告)号：US08421167B2

公开(公告)日：2013-04-16

申请号：US12952895

申请日：2010-11-23

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L21/00

CPC分类号： B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US20100159627A1

公开(公告)日：2010-06-24

申请号：US12578739

申请日：2009-10-14

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L21/56

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/402 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/31612

摘要： A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor.

摘要翻译： 通过在富氧环境中氧化或分解硅前体气体然后进行退火而形成氧化硅层。 氧化硅层可以形成为稍微的压缩应力，以在退火之后产生具有非常低的应力的氧化物层。 由此形成的氧化硅层容易地被蚀刻，而不会使用HF-蒸气而产生残余物。

公开(公告)号：US20090309175A1

公开(公告)日：2009-12-17

申请号：US12403468

申请日：2009-03-13

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L23/28

CPC分类号： B81C1/00293 ,  B81C2203/0136

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior to final packaging and/or completion of the MEMS. The environment within the chamber containing and/or housing the mechanical structures provides the predetermined, desired and/or selected mechanical damping. The parameters of the encapsulated fluid (for example, the gas pressure) in which the mechanical structures are to operate are controlled, selected and/or designed to provide a desired and/or predetermined operating environment.

摘要翻译： 这里描述和说明了许多发明。 一方面，本发明涉及一种制造或制造具有在受控或预定的机械阻尼环境中操作的机械结构的MEMS的技术。 在这方面，本发明在MEMS的最终包装和/或完成之前将机械结构封装在腔室内。 包含和/或容纳机械结构的腔室内的环境提供预定的，期望的和/或选择的机械阻尼。 控制，选择和/或设计机械结构要操作的封装流体的参数（例如，气体压力）以提供期望的和/或预定的操作环境。

公开(公告)号：US20080237756A1

公开(公告)日：2008-10-02

申请号：US11901826

申请日：2007-09-18

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L23/06 ,  H01L21/02

CPC分类号： B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US20060108652A1

公开(公告)日：2006-05-25

申请号：US11323920

申请日：2005-12-30

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L29/82 ,  H01L29/84

CPC分类号： B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US20060054972A1

公开(公告)日：2006-03-16

申请号：US10518065

申请日：2002-12-11

申请人： Silvia Kronmueller ,  Ulf Wilhelm

发明人： Silvia Kronmueller ,  Ulf Wilhelm

IPC分类号： H01L27/12

CPC分类号： B81C1/00095 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A method and device are for anchoring fixed structural elements and, e.g., for anchoring electrodes for components, e.g., SOI wafer components, whose component structure is formed in a silicon layer on top of a substrate used as support. The fixed element may be mechanically connected to the substrate via at least one anchoring element made of an anchoring material and extending through the silicon layer. In the case of an SOI wafer, the anchoring element may extend through the silicon layer and the sacrificial layer of the SOI wafer. To this end, in the area of the surface of the fixed element, at least one recess is made in the silicon layer, which may extend through the entire silicon layer and the sacrificial layer down to the substrate. The recess may then be filled with an anchoring material, so that the fixed element is mechanically connected to the substrate via the anchoring element that is thereby created.

摘要翻译： 一种方法和装置用于锚固固定的结构元件，并且例如用于锚定用于部件的电极，例如SOI晶片部件，其SOI部件结构形成在用作支撑件的基板的顶部上的硅层中。 固定元件可以经由至少一个由锚固材料制成并延伸穿过硅层的锚固元件机械连接到基板。 在SOI晶片的情况下，锚定元件可以延伸穿过SOI晶片的硅层和牺牲层。 为此，在固定元件表面的区域中，在硅层中形成至少一个凹槽，硅层可延伸穿过整个硅层和牺牲层向下延伸至衬底。 然后可以用锚固材料填充凹部，使得固定元件通过由此产生的锚固元件机械地连接到基板。

公开(公告)号：US07352040B2

公开(公告)日：2008-04-01

申请号：US11078253

申请日：2005-03-11

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L29/84

CPC分类号： B81C1/00301 ,  B81B2207/015 ,  B81B2207/095 ,  B81C2201/0176 ,  B81C2203/0136

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 一方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构以及至少部分地设置在腔室外部的接触区域。 接触区域通过设置在接触区域周围的绝缘隔离沟槽与附近的导电区域电隔离。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US07288824B2

公开(公告)日：2007-10-30

申请号：US11323920

申请日：2005-12-30

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 一方面，本发明涉及一种MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US06936491B2

公开(公告)日：2005-08-30

申请号：US10455555

申请日：2003-06-04

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： B81B7/00 ,  H01L21/00

CPC分类号： B81C1/00301 ,  B81B2207/015 ,  B81B2207/095 ,  B81C2201/0176 ,  B81C2203/0136

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 一方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构以及至少部分地设置在腔室外部的接触区域。 接触区域通过设置在接触区域周围的绝缘隔离沟槽与附近的导电区域电隔离。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US08623686B2

公开(公告)日：2014-01-07

申请号：US13829393

申请日：2013-03-14

申请人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

发明人： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC分类号： H01L21/00

CPC分类号： B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。