公开(公告)号：US20120133011A1

公开(公告)日：2012-05-31

申请号：US13363801

申请日：2012-02-01

申请人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida

发明人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.

摘要翻译： 根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光 所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜 第二半导体层覆盖第二半导体层。

公开(公告)号：US20110156186A1

公开(公告)日：2011-06-30

申请号：US12875546

申请日：2010-09-03

申请人： Yoshinori Iida ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki

发明人： Yoshinori Iida ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki

IPC分类号： H01L31/0232

CPC分类号： H01L27/1463 ,  H01L27/1464

摘要： Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.

摘要翻译： 某些实施例提供了一种固态成像装置，包括：设置在半导体衬底上的多个像素，每个像素具有半导体区域，该半导体区域将来自半导体衬底的第一面侧的入射光转换成信号电荷并将其存储 信号充电 读出电路，设置在与第一面相反一侧的第二面的一侧，并读出存储在像素中的信号电荷; 以及设置在所述半导体衬底中的相邻像素之间的像素分离结构，所述像素分离结构包括埋置在从所述第一面延伸的沟槽中的叠层膜，所述堆叠膜包括沿侧面设置的第一绝缘膜和底部 并且设置在沟槽中的固定电荷膜以覆盖第一绝缘膜并且保持作为非信号电荷的固定电荷。

公开(公告)号：US20100231246A1

公开(公告)日：2010-09-16

申请号：US12717579

申请日：2010-03-04

申请人： Masako Ogata ,  Hideyuki Funaki ,  Kazuhiro Suzuki

发明人： Masako Ogata ,  Hideyuki Funaki ,  Kazuhiro Suzuki

IPC分类号： G01R27/08

CPC分类号： H03K17/975 ,  E05Y2800/748 ,  H03K2017/9613

摘要： A sensor apparatus for detecting a positional relationship includes a first electrode, an applying unit applying a charging signal with a first cycle period to the first electrode, a second electrode, a selecting unit selecting the first or second cycle period which have overlapped segment periods, an output unit outputting electrical signals supplied from the second electrode with the first cycle period, if the first cycle period is selected, and parts of the electrical signals during the segment periods, if the second cycle period is selected, a comparator comparing an amplitude of the electrical signals with a threshold value and generating a first or second comparison signal and a controller generating a proximity and non-proximity signal in response to the first and second comparison signal, respectively, so that the selecting unit selects the first and second cycle period in response to the proximity and non-proximity signal, respectively.

摘要翻译： 用于检测位置关系的传感器装置包括第一电极，向第一电极施加具有第一周期的充电信号的施加单元，第二电极，选择具有重叠段周期的第一或第二周期周期的选择单元， 输出单元，如果选择了第一周期周期，则输出从第二电极提供的电信号，如果选择了第一周期周期，则在段周期内输出部分电信号，如果选择了第二周期周期，则比较器比较 所述电信号具有阈值并且分别响应于所述第一和第二比较信号产生第一或第二比较信号和控制器产生接近和非接近信号，使得所述选择单元选择所述第一和第二周期周期 分别响应于接近和非接近信号。

公开(公告)号：US07737400B2

公开(公告)日：2010-06-15

申请号：US12206234

申请日：2008-09-08

申请人： Hideyuki Funaki ,  Yoshinori Iida ,  Hiroto Honda

发明人： Hideyuki Funaki ,  Yoshinori Iida ,  Hiroto Honda

IPC分类号： G01J5/20

CPC分类号： H04N5/33 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0048 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/363 ,  H04N5/3651

摘要： A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources.

摘要翻译： 测辐射计型非冷却红外线传感器包括：具有以矩阵形式布置在半导体衬底上的检测像素的摄像区域，以检测入射的红外线; 设置在图像拾取区域中的多个行选择线; 能够使恒定电流流过各行选择线的电流源; 设置在所述摄像区域中的多条信号线; 电压读出电路，分别对应于信号线，以读出分别对应的信号线上产生的信号电压; 分别设置在各信号线和对应的电压读出电路之间的耦合电容; 以及计算器，其计算由电压读出电路读出的两个信号电压之间的差值，对应于从电流源提供的两个不同电流值的相同检测像素的输出。

公开(公告)号：US20090127639A1

公开(公告)日：2009-05-21

申请号：US12206101

申请日：2008-09-08

申请人： Kazuhiro Suzuki ,  Yoshinori Iida ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Yoshinori Iida ,  Hideyuki Funaki

IPC分类号： H01L25/00

CPC分类号： G01C19/5719 ,  B81C1/00238 ,  B81C2203/0109 ,  B81C2203/019

摘要： A semiconductor apparatus includes: a first chip including a MEMS device which has a structure supported in midair therein, and having first pads and a first joining region electrically connected to the MEMS device on a top face thereof; a second chip including a circuit having a semiconductor device electrically connected to the MEMS device therein, and having second pads and a second joining region electrically connected to the semiconductor device on a top face thereof, the second chip being disposed in opposition to the first chip so as to oppose the second pads and the second joining region respectively to the first pads and the first joining region; electrical connection parts which electrically connect the first pads to the second pads, respectively; and joining parts provided between the first joining region and the second joining region opposed to the first joining region to join the first chip and the second chip to each other.

摘要翻译： 半导体装置包括：第一芯片，其包括具有支撑在其中空间的结构的MEMS器件，并且具有第一焊盘和在其顶面上电连接到MEMS器件的第一接合区域; 第二芯片，包括具有与其中的MEMS器件电连接的半导体器件的电路，并且具有在其顶面上与半导体器件电连接的第二焊盘和第二接合区域，第二芯片设置成与第一芯片相对 以便分别将第二焊盘和第二接合区域与第一焊盘和第一接合区域相对; 分别将第一焊盘电连接到第二焊盘的电连接部分; 以及设置在第一接合区域和与第一接合区域相对的第二接合区域之间的接合部分，以将第一芯片和第二芯片彼此接合。

公开(公告)号：US20080238550A1

公开(公告)日：2008-10-02

申请号：US11857737

申请日：2007-09-19

申请人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

发明人： Tadahiro SASAKI ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

IPC分类号： H03F3/16 ,  H03F3/68

CPC分类号： H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

公开(公告)号：US20050241398A1

公开(公告)日：2005-11-03

申请号：US11116273

申请日：2005-04-28

申请人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida ,  Yujiro Naruse

发明人： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida ,  Yujiro Naruse

IPC分类号： H04R7/02 ,  G01H9/00 ,  G01N29/04 ,  G01N29/24 ,  H04R7/04 ,  H04R19/04

CPC分类号： G01N29/2418 ,  G01H9/00

摘要： In an acoustoelectric converter element, a light wave from a light source is introduced into a first optical waveguide of a vibration substrate, and diffracted by a diffraction grating disposed on the first optical waveguide. The diffracted light is directed to and detected by a photo detector. Here, the vibration substrate is so supported as to vibrate with respect to an acoustic wave. Therefore, the diffracted light detected by the photo detector is modulated by the acoustic wave, and a signal is output from the detector in accordance with the acoustic wave.

摘要翻译： 在声电转换元件中，来自光源的光波被引入到振动基板的第一光波导中，并且被设置在第一光波导上的衍射光栅衍射。 衍射光被光检测器导向并检测。 这里，振动基板被支撑为相对于声波振动。 因此，由光检测器检测的衍射光被声波调制，并且根据声波从检测器输出信号。

公开(公告)号：US5635736A

公开(公告)日：1997-06-03

申请号：US527729

申请日：1995-09-13

申请人： Hideyuki Funaki ,  Yoshihiro Yamaguchi

发明人： Hideyuki Funaki ,  Yoshihiro Yamaguchi

IPC分类号： H01L23/482 ,  H01L27/08 ,  H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L29/786 ,  H01L27/10

CPC分类号： H01L27/0802 ,  H01L23/4824 ,  H01L29/0692 ,  H01L29/41725 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2924/0002

摘要： A MOS gate type semiconductor device, comprising an upper source wiring consisting of a plurality of upper source electrodes, an upper drain wiring provided on a semiconductor substrate and consisting of a plurality of upper drain electrodes formed in a comb-like arrangement such that the plurality of upper drain electrodes are engaged with the upper source electrodes, lower source electrodes provided at each of lower portions of adjacent pairs of the upper source electrodes and the upper drain electrodes such that the lower source electrodes are layered below the upper source electrodes and the upper drain electrodes, and lower drain electrodes provided at each of lower portions of adjacent pairs of the upper source electrodes and the upper drain electrodes electrode such that the lower drain electrodes are layered below the upper source electrodes and the upper drain electrodes, wherein the lower source electrodes are connected to the upper source electrodes and the source region, and are disposed so as to form a wave-like shape, and the lower drain electrodes are connected to the upper drain electrodes and the drain region, and are disposed so as to form a wave-like shape.

摘要翻译： 一种MOS栅型半导体器件，包括由多个上源电极组成的上源极布线，设置在半导体衬底上的上漏极布线，并且由形成为梳状布置的多个上漏电极组成， 上部漏电极与上部源电极接合，设置在相邻成对的上部源电极和上部漏电极的下部的下部源电极，使得下部源电极层叠在上部源电极和上部 漏极电极和下漏电极，其设置在相邻成对的上源电极和上漏电极电极的下部，使得下漏电极层叠在上源电极和上漏电极的下方，其中下源 电极连接到上源电极和源区，a d被配置成波形形状，下部漏极连接到上部漏电极和漏极区域，并且被配置为形成波浪形状。

公开(公告)号：US09048157B2

公开(公告)日：2015-06-02

申请号：US13221061

申请日：2011-08-30

申请人： Risako Ueno ,  Hideyuki Funaki ,  Mitsuyoshi Kobayashi

发明人： Risako Ueno ,  Hideyuki Funaki ,  Mitsuyoshi Kobayashi

IPC分类号： H04N3/14 ,  H04N5/225 ,  H01L27/146

CPC分类号： G06T7/0065 ,  G02B3/0037 ,  H01L27/14627 ,  H04N5/23229 ,  H04N9/045 ,  H04N2209/042

摘要： A solid-state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and comprising an imaging region including a plurality of pixel blocks each including a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system comprising a microlens array including a plurality of microlenses each corresponding to one of the pixel blocks, and reducing and re-forming the image to be formed on the imaging plane on the pixel blocks corresponding to the respective microlenses. The imaging plane of the first optical system is located further away from the first optical system than the imaging element when the object is located at an infinite distance.

摘要翻译： 根据实施例的固态成像装置包括：成像元件，形成在半导体衬底上，并且包括：成像区域，包括多个像素块，每个像素块包括多个像素; 第一光学系统，其在成像平面上形成物体的图像; 以及第二光学系统，其包括微透镜阵列，所述微透镜阵列包括多个微透镜，每个微透镜各自对应于所述像素块之一，并且在对应于所述各个微透镜的像素块上减小并重新形成将在所述成像平面上形成的图像。 当物体位于无限距离时，第一光学系统的成像平面位于比成像元件更远离第一光学系统的位置。

公开(公告)号：US08681249B2

公开(公告)日：2014-03-25

申请号：US13221097

申请日：2011-08-30

申请人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

发明人： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

IPC分类号： H04N9/64 ,  H04N5/225

CPC分类号： H04N5/232

摘要： A solid-state imaging device according to an embodiment includes: a first optical system configured to form an image of an object on an image formation plane; an imaging element comprising an imaging area which includes a plurality of pixel blocks each including a plurality of pixels; a second optical system configured to include a microlens array including a plurality of microlenses provided to correspond to the plurality of pixel blocks and reduce and re-form an image scheduled to be formed on the image formation plane, in a pixel block corresponding to an individual microlens; and a signal processing unit configured to perform image signal processing with an optical position relation between each microlens and the pixel block corrected, by using an image signal of the object obtained by the imaging element.

摘要翻译： 根据实施例的固态成像装置包括：第一光学系统，被配置为在图像形成平面上形成对象的图像; 成像元件包括：成像区域，其包括多个像素块，每个像素块包括多个像素; 第二光学系统，被配置为包括微透镜阵列，所述微透镜阵列包括多个微透镜，所述微透镜提供为对应于所述多个像素块，并且在对应于个体的像素块中减少并重新形成被调度以形成在所述图像形成平面上的图像 微透镜 以及信号处理单元，被配置为通过使用由所述成像元件获得的所述对象的图像信号，通过校正的每个微透镜与所述像素块之间的光学位置关系来执行图像信号处理。