Determining endpoint in a substrate process
    21.
    发明授权
    Determining endpoint in a substrate process 失效
    确定底物过程中的终点

    公开(公告)号:US07969581B2

    公开(公告)日:2011-06-28

    申请号:US12898672

    申请日:2010-10-05

    IPC分类号: G01B11/02

    摘要: An endpoint detection method for detecting an endpoint of a process comprises reflecting polychromatic light from a substrate, the polychromatic light having a plurality of wavelengths. A plurality of light beams having different wavelengths are generated from the reflected polychromatic light. A wavelength of light is determined from the plurality of light beams, at which a local intensity of the reflected light is maximized.

    摘要翻译: 用于检测过程的端点的端点检测方法包括:反射来自衬底的多色光,所述多色光具有多个波长。 从反射的多色光产生具有不同波长的多个光束。 从反射光的局部强度最大化的多个光束确定光的波长。

    Determining endpoint in a substrate process
    22.
    发明授权
    Determining endpoint in a substrate process 有权
    确定底物过程中的终点

    公开(公告)号:US07808651B2

    公开(公告)日:2010-10-05

    申请号:US12688840

    申请日:2010-01-15

    IPC分类号: G01B11/02

    摘要: An endpoint detection system for detecting an endpoint of a process comprises a polychromatic light source which emits polychromatic light. The light is reflected from a substrate. A light wavelength selector receives the reflected polychromatic light and determines a wavelength of light at which a local intensity of the reflected light is maximized during the process. In one version, the wavelength selector comprises a diffraction grating to generate a plurality of light beams having different wavelengths from the reflected polychromatic light and a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.

    摘要翻译: 用于检测过程的端点的端点检测系统包括发出多色光的多色光源。 光从基底反射。 光波长选择器接收反射的多色光并确定在该过程中反射光的局部强度最大化的光的波长。 在一个版本中,波长选择器包括衍射光栅以产生与反射的多色光不同的波长的多个光束,以及光检测器,用于接收具有不同波长的光束,并且产生每个波长的强度的强度信号迹线 的多色反射光。

    Interferometric endpoint determination in a substrate etching process
    23.
    发明申请
    Interferometric endpoint determination in a substrate etching process 失效
    基板蚀刻工艺中的干涉测量端点测定

    公开(公告)号:US20080151237A1

    公开(公告)日:2008-06-26

    申请号:US11953853

    申请日:2007-12-10

    IPC分类号: G01J3/00 G01N21/55 G01B9/02

    摘要: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

    摘要翻译: 在确定蚀刻衬底的端点时,指向衬底的光从衬底反射。 选择光的波长以在蚀刻处理的初始时间点局部地最大化反射光的强度。 检测反射光以确定基板蚀刻工艺的端点。

    Interferometric endpoint determination in a substrate etching process
    24.
    发明授权
    Interferometric endpoint determination in a substrate etching process 失效
    基板蚀刻工艺中的干涉测量端点测定

    公开(公告)号:US07306696B2

    公开(公告)日:2007-12-11

    申请号:US10286402

    申请日:2002-11-01

    摘要: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

    摘要翻译: 在确定蚀刻衬底的端点时,指向衬底的光从衬底反射。 选择光的波长以在蚀刻处理的初始时间点局部地最大化反射光的强度。 检测反射光以确定基板蚀刻工艺的端点。

    METHOD AND SYSTEM FOR MONITORING AN ETCH PROCESS
    25.
    发明申请
    METHOD AND SYSTEM FOR MONITORING AN ETCH PROCESS 审中-公开
    监测过程的方法和系统

    公开(公告)号:US20120291952A1

    公开(公告)日:2012-11-22

    申请号:US13564963

    申请日:2012-08-02

    IPC分类号: G06F15/00 B44C1/22

    摘要: A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.

    摘要翻译: 一种用于监测蚀刻工艺的方法和装置。 可以使用与原位监测(例如,光谱学,干涉测量,散射测量法)相关的蚀刻过程非位置提供的测量信息(例如,临界尺寸(CD),层厚度等)来监测蚀刻工艺 ,反射测量等)。 与现场监测结合的非原位测量信息可以用于监测例如蚀刻工艺的端点,形成在衬底上的特征的蚀刻深度分布,集成电路制造工艺的故障检测, 等等。

    Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber
    26.
    发明授权
    Method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber 有权
    设置在真空处理室中的工件的原位测量方法和装置

    公开(公告)号:US08274645B2

    公开(公告)日:2012-09-25

    申请号:US12506155

    申请日:2009-07-20

    IPC分类号: G01N21/00

    CPC分类号: G03F7/70625 G01B2210/56

    摘要: A method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber. The apparatus may include an optical assembly external to the processing chamber configured to focus a relatively large optical spot over a relatively large working distance to acquire a TE and TM spectra from a periodic array on the workpiece. The workpiece may be disposed in the processing chamber with an arbitrary orientation which is first determined via a reflectance measurement. TE and/or TM spectra may then be acquired by initiating a periodic triggering of a flash lamp based on the determined workpiece orientation to account for variation in placement of the workpiece within the processing chamber. The periodic array from which spectra are collected may be a memory array being fabricated in a semiconductor wafer.

    摘要翻译: 一种用于原位计量的设置在真空处理室中的工件的方法和装置。 该设备可以包括处理室外部的光学组件,其配置成在相对大的工作距离上聚焦相对较大的光点,以从工件上的周期性阵列获取TE和TM光谱。 工件可以以任意取向设置在处理室中,该取向首先通过反射测量确定。 然后可以通过基于所确定的工件取向启动闪光灯的周期性触发来获取TE和/或TM光谱,以考虑工件在处理室内的放置变化。 收集光谱的周期性阵列可以是在半导体晶片中制造的存储器阵列。

    Determining endpoint in a substrate process
    27.
    发明授权
    Determining endpoint in a substrate process 有权
    确定底物过程中的终点

    公开(公告)号:US08130382B2

    公开(公告)日:2012-03-06

    申请号:US13171269

    申请日:2011-06-28

    IPC分类号: G01B11/02

    摘要: An endpoint detection method for detecting an endpoint of a process comprises determining a reflectance spectrum of light reflected from a substrate, the light having a wavelength, processing the substrate while light having the wavelength is reflected from the substrate, detecting light having the wavelength after the light is reflected from the substrate, generating a signal trace of the intensity of the reflected light and normalizing the signal trace with the reflectance spectrum of the light. The normalized signal trace can then be evaluated to determine an endpoint of the process.

    摘要翻译: 用于检测处理的端点的端点检测方法包括:确定从衬底反射的光的反射光谱,具有波长的光,处理衬底,同时具有波长的光从衬底反射,检测具有波长的光 光从衬底反射,产生反射光强度的信号迹线,并用光的反射光谱对信号迹线进行归一化。 然后可以评估归一化信号迹线以确定过程的端点。

    METHOD AND APPARATUS FOR IN-SITU METROLOGY OF A WORKPIECE DISPOSED IN A VACUUM PROCESSING CHAMBER
    28.
    发明申请
    METHOD AND APPARATUS FOR IN-SITU METROLOGY OF A WORKPIECE DISPOSED IN A VACUUM PROCESSING CHAMBER 有权
    在真空加工室中处理的工件的现场计量方法和装置

    公开(公告)号:US20110013175A1

    公开(公告)日:2011-01-20

    申请号:US12506155

    申请日:2009-07-20

    IPC分类号: G01N21/47

    CPC分类号: G03F7/70625 G01B2210/56

    摘要: A method and apparatus for in-situ metrology of a workpiece disposed in a vacuum processing chamber. The apparatus may include an optical assembly external to the processing chamber configured to focus a relatively large optical spot over a relatively large working distance to acquire a TE and TM spectra from a periodic array on the workpiece. The workpiece may be disposed in the processing chamber with an arbitrary orientation which is first determined via a reflectance measurement. TE and/or TM spectra may then be acquired by initiating a periodic triggering of a flash lamp based on the determined workpiece orientation to account for variation in placement of the workpiece within the processing chamber. The periodic array from which spectra are collected may be a memory array being fabricated in a semiconductor wafer.

    摘要翻译: 一种用于原位计量的设置在真空处理室中的工件的方法和装置。 该设备可以包括处理室外部的光学组件,其配置成在相对大的工作距离上聚焦相对较大的光点,以从工件上的周期性阵列获取TE和TM光谱。 工件可以以任意取向设置在处理室中,该取向首先通过反射测量确定。 然后可以通过基于所确定的工件取向启动闪光灯的周期性触发来获取TE和/或TM光谱,以考虑工件在处理室内的放置变化。 收集光谱的周期性阵列可以是在半导体晶片中制造的存储器阵列。

    Method for controlling a process for fabricating integrated devices
    29.
    发明授权
    Method for controlling a process for fabricating integrated devices 有权
    用于控制用于制造集成器件的工艺的方法

    公开(公告)号:US07815812B2

    公开(公告)日:2010-10-19

    申请号:US11536204

    申请日:2006-09-28

    IPC分类号: B21J19/04

    摘要: A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

    摘要翻译: 一种用于控制在衬底上制造集成器件的工艺的方法。 该方法包括用于在衬底上形成的结构的预蚀刻和蚀刻后尺寸的原位和原位测量,并且使用测量结果来调整工艺配方并控制蚀刻和外部衬底处理设备的操作状态 。 在一个示例性应用中,该方法在用于制造沟槽电容器的电容结构的多遍处理期间被使用。

    Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring
    30.
    发明授权
    Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring 有权
    通过综合等离子体监测自动确定半导体等离子体室匹配和故障源的方法

    公开(公告)号:US07695987B2

    公开(公告)日:2010-04-13

    申请号:US11612961

    申请日:2006-12-19

    IPC分类号: H01L21/00

    摘要: A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes so as to generate steady principal components and transitional principal components; and these principal components are compared to reference principal components associated with a reference chamber. The process used for calibration includes a regular plasma process followed by a process perturbation of one process parameter. Similar process perturbation runs are conducted several times to include different perturbation parameters. By performing inner products of the principal components of chamber under study and the reference chamber, matching scores can be reached. Automatic chamber matching can be determined by comparing these scores with preset control limits. The potential source(s) of chamber fault can also be identified by the lowest matching score(s).

    摘要翻译: 提供了一种用于自动确定匹配故障源的半导体等离子体室的方法和装置。 测量在研究室和参考室中用于校准的过程的相关等离子体属性。 然后对测量的相关属性进行主成分分析,以产生稳定的主成分和过渡主成分; 并且将这些主要部件与与参考室相关联的参考主要部件进行比较。 用于校准的过程包括常规等离子体处理,随后是一个过程参数的过程扰动。 进行几次相似的过程扰动运行,以包括不同的扰动参数。 通过执行正在研究的室的主要成分和参考室的内部产物,可以达到匹配分数。 可以通过将这些分数与预设的控制限制进行比较来确定自动室匹配。 室故障的潜在来源也可以通过最低匹配得分识别。