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1.发明申请ADVANCED PROCESS SENSING AND CONTROL USING NEAR INFRARED SPECTRAL REFLECTOMETRY 有权使用近红外光谱反射光谱的先进过程感测和控制公开(公告)号：US20090218314A1
公开(公告)日：2009-09-03
申请号：US12040698
申请日：2008-02-29
申请人： Matthew Fenton Davis , Lei Lian
发明人： Matthew Fenton Davis , Lei Lian
CPC分类号： H01L21/67253 , G01N21/73 , G02B6/04 , G02B6/40 , H01J37/32935 , H01J37/32972
摘要： Embodiments described herein provide a method and apparatus for obtaining process information in a substrate manufacturing process using plasma. In one embodiment, a chamber is provided having one or more optical metrology modules that are positioned such that optical energy from the plasma process is detected at substantially orthogonal angles. Metrics derived from detected optical energy may be used for endpoint determination, substrate temperature, and monitoring of critical dimensions on the substrate.
摘要翻译： 本文描述的实施例提供了一种在使用等离子体的基板制造工艺中获得工艺信息的方法和装置。 在一个实施例中，提供具有一个或多个光学测量模块的腔室，其被定位成使得来自等离子体处理的光能以基本上正交的角度被检测。 从检测到的光能导出的指标可用于终点测定，基板温度和基板上临界尺寸的监测。
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公开(公告)号：US20120291952A1
公开(公告)日：2012-11-22
申请号：US13564963
申请日：2012-08-02
CPC分类号： H01J37/32935 , G03F7/70625 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.
摘要翻译： 一种用于监测蚀刻工艺的方法和装置。 可以使用与原位监测（例如，光谱学，干涉测量，散射测量法）相关的蚀刻过程非位置提供的测量信息（例如，临界尺寸（CD），层厚度等）来监测蚀刻工艺 ，反射测量等）。 与现场监测结合的非原位测量信息可以用于监测例如蚀刻工艺的端点，形成在衬底上的特征的蚀刻深度分布，集成电路制造工艺的故障检测， 等等。
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公开(公告)号：US08130382B2
公开(公告)日：2012-03-06
申请号：US13171269
申请日：2011-06-28
申请人： Lei Lian , Matthew Fenton Davis
发明人： Lei Lian , Matthew Fenton Davis
IPC分类号： G01B11/02
CPC分类号： H01J37/32935 , G01B11/0675 , G01B11/0683 , H01J37/32963
摘要： An endpoint detection method for detecting an endpoint of a process comprises determining a reflectance spectrum of light reflected from a substrate, the light having a wavelength, processing the substrate while light having the wavelength is reflected from the substrate, detecting light having the wavelength after the light is reflected from the substrate, generating a signal trace of the intensity of the reflected light and normalizing the signal trace with the reflectance spectrum of the light. The normalized signal trace can then be evaluated to determine an endpoint of the process.
摘要翻译： 用于检测处理的端点的端点检测方法包括：确定从衬底反射的光的反射光谱，具有波长的光，处理衬底，同时具有波长的光从衬底反射，检测具有波长的光 光从衬底反射，产生反射光强度的信号迹线，并用光的反射光谱对信号迹线进行归一化。 然后可以评估归一化信号迹线以确定过程的端点。
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4.发明授权Advanced process sensing and control using near infrared spectral reflectometry 有权使用近红外光谱反射计的先进工艺感测和控制公开(公告)号：US08009938B2
公开(公告)日：2011-08-30
申请号：US12040698
申请日：2008-02-29
申请人： Matthew Fenton Davis , Lei Lian
发明人： Matthew Fenton Davis , Lei Lian
IPC分类号： G02B6/00 , G02B6/04 , C23F1/00 , G01J3/45 , C03B37/023
CPC分类号： H01L21/67253 , G01N21/73 , G02B6/04 , G02B6/40 , H01J37/32935 , H01J37/32972
摘要： Embodiments described herein provide a method and apparatus for obtaining process information in a substrate manufacturing process using plasma. In one embodiment, a chamber is provided having one or more optical metrology modules that are positioned such that optical energy from the plasma process is detected at substantially orthogonal angles. Metrics derived from detected optical energy may be used for endpoint determination, substrate temperature, and monitoring of critical dimensions on the substrate.
摘要翻译： 本文描述的实施例提供了一种在使用等离子体的基板制造工艺中获得工艺信息的方法和装置。 在一个实施例中，提供具有一个或多个光学测量模块的腔室，其被定位成使得来自等离子体处理的光能以基本上正交的角度被检测。 从检测到的光能导出的指标可用于终点测定，基板温度和基板上临界尺寸的监测。
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公开(公告)号：US07969581B2
公开(公告)日：2011-06-28
申请号：US12898672
申请日：2010-10-05
申请人： Lei Lian , Matthew Fenton Davis
发明人： Lei Lian , Matthew Fenton Davis
IPC分类号： G01B11/02
CPC分类号： H01J37/32935 , G01B11/0675 , G01B11/0683 , H01J37/32963
摘要： An endpoint detection method for detecting an endpoint of a process comprises reflecting polychromatic light from a substrate, the polychromatic light having a plurality of wavelengths. A plurality of light beams having different wavelengths are generated from the reflected polychromatic light. A wavelength of light is determined from the plurality of light beams, at which a local intensity of the reflected light is maximized.
摘要翻译： 用于检测过程的端点的端点检测方法包括：反射来自衬底的多色光，所述多色光具有多个波长。 从反射的多色光产生具有不同波长的多个光束。 从反射光的局部强度最大化的多个光束确定光的波长。
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公开(公告)号：US08257546B2
公开(公告)日：2012-09-04
申请号：US10674568
申请日：2003-09-29
IPC分类号： H01L21/00
CPC分类号： H01J37/32935 , G03F7/70625 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.
摘要翻译： 一种用于监测蚀刻工艺的方法和装置。 可以使用与原位监测（例如，光谱学，干涉测量，散射测量法）相关的蚀刻过程非位置提供的测量信息（例如，临界尺寸（CD），层厚度等）来监测蚀刻工艺 ，反射测量等）。 与现场监测结合的非原位测量信息可以用于监测例如蚀刻工艺的端点，形成在衬底上的特征的蚀刻深度分布，集成电路制造工艺的故障检测， 等等。
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7.发明申请IMPLEMENTATION OF ADVANCED ENDPOINT FUNCTIONS WITHIN THIRD PARTY SOFTWARE BY USING A PLUG-IN APPROACH 审中-公开通过使用插入式方法在第三方软件中实现先进的端点功能公开(公告)号：US20090158265A1
公开(公告)日：2009-06-18
申请号：US11956210
申请日：2007-12-13
IPC分类号： G06F9/445
CPC分类号： G06F8/65
摘要： Embodiments described herein generally relate to a method of updating a software routine with subprograms and subroutines that can be accessed by an end user on an as-needed basis. In one embodiment, a method of providing a control function for a semiconductor process to a pre-existing software architecture is described. The method includes providing a plug-in to the pre-existing software architecture, providing an upgrade library file having the control function therein, and uploading the upgrade library file to the pre-existing software architecture at the plug-in to facilitate process control of the semiconductor process.
摘要翻译： 本文描述的实施例通常涉及用子程序和子程序来更新软件程序的方法，所述子程序和子程序可以由最终用户根据需要访问。 在一个实施例中，描述了将半导体处理的控制功能提供给预先存在的软件架构的方法。 该方法包括提供对现有软件体系结构的插件，提供其中具有控制功能的升级库文件，以及将升级库文件上传到插件上的预先存在的软件体系结构，以便于 半导体工艺。
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公开(公告)号：US07946759B2
公开(公告)日：2011-05-24
申请号：US11676092
申请日：2007-02-16
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/02 , G01J5/025 , G01J5/026 , G01J2005/0051
摘要： A method and apparatus for measuring a substrate temperature during a thermal process are provided. In one embodiment, an apparatus for measuring a substrate temperature during a thermal process includes an evacutable chamber, a substrate heater positioned to heat a substrate disposed in the chamber, and a sensor positioned to receive energy transmitted through the substrate while the substrate is heated by the substrate heater, wherein the sensor is configured to detect a metric indicative of transmittance. In another embodiment, a method for measuring a substrate temperature includes heating a substrate disposed in a chamber, detecting a change in transmittance of the substrate while heating, and determining a temperature of the substrate based on the change in transmittance.
摘要翻译： 提供了一种用于在热处理期间测量衬底温度的方法和装置。 在一个实施例中，用于在热处理期间测量衬底温度的装置包括可抽空室，定位成加热设置在腔室中的衬底的衬底加热器，以及传感器，定位成在衬底被加热的同时接收透过衬底的能量 衬底加热器，其中传感器被配置为检测指示透射率的度量。 在另一个实施例中，用于测量衬底温度的方法包括加热设置在腔室中的衬底，检测加热时衬底的透射率的变化，以及基于透射率的变化来确定衬底的温度。
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9.发明授权公开(公告)号：US08486194B2
公开(公告)日：2013-07-16
申请号：US13652814
申请日：2012-10-16
IPC分类号： C23C16/00
CPC分类号： H01L21/02071 , H01L21/67109 , H01L21/67115 , H01L21/67201 , H01L21/68728 , H01L21/68785 , Y10T428/24008 , Y10T428/24628
摘要： An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.
摘要翻译： 提供了用于从基板除去挥发性残留物的装置。 在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中维持真空的操作的腔室和定位成加热设置在腔室中的衬底的热模块。 用于从基板除去含卤素残留物的设备还包括以下中的至少一个：A）温度控制基座，其具有径向延伸的突出物，其适于将温度控制基座支撑在腔体的凸缘上，所述突起热隔离基座 从室内; B）一对基板保持器，其包括从弧形体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有包括倾斜着陆部的基板支撑台阶; 或C）圆顶窗。
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10.发明申请SUBSTRATE TEMPERATURE MEASUREMENT BY INFRARED TRANSMISSION IN AN ETCH PROCESS 审中-公开通过红外传输在蚀刻过程中的基板温度测量公开(公告)号：US20090316749A1
公开(公告)日：2009-12-24
申请号：US12144157
申请日：2008-06-23
申请人： Matthew Fenton Davis
发明人： Matthew Fenton Davis
IPC分类号： G01J5/12
CPC分类号： G01J5/0003 , G01J5/0007
摘要： A method and apparatus for measuring a temperature during a process are provided. In one embodiment, an apparatus for measuring a substrate temperature during an etching process is provided that includes a chamber body, a chamber lid enclosing the chamber body and a substrate support assembly. A plurality of windows formed in a substrate supporting surface of the substrate support assembly. A signal generator is optically coupled through the substrate support assembly to the windows. A sensor is positioned above the substrate support and aligned to receive energy transmitted from the signal generator through at least one of the windows, wherein the sensor is configured to detect a metric indicative of transmittance.
摘要翻译： 提供了一种用于在处理过程中测量温度的方法和装置。 在一个实施例中，提供了一种用于在蚀刻工艺期间测量衬底温度的装置，其包括室主体，封闭室主体的室盖和衬底支撑组件。 形成在基板支撑组件的基板支撑表面中的多个窗口。 信号发生器通过基板支撑组件光学耦合到窗户。 传感器位于衬底支撑件上方并对准以接收从信号发生器通过至少一个窗口传输的能量，其中传感器被配置为检测指示透射率的度量。
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