公开(公告)号：US07674636B2

公开(公告)日：2010-03-09

申请号：US11684818

申请日：2007-03-12

申请人： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

发明人： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

IPC分类号： H01L21/66

CPC分类号： H01L22/20

摘要： A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

摘要翻译： 提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。 优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。 例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。 支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性 。

公开(公告)号：US20080223873A1

公开(公告)日：2008-09-18

申请号：US11684853

申请日：2007-03-12

申请人： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

发明人： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC分类号： C23F1/02

CPC分类号： H01J37/32642 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/0324 ,  Y10T428/215

摘要： A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

摘要翻译： 描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。 用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。 所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与 一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

公开(公告)号：US08847159B2

公开(公告)日：2014-09-30

申请号：US13433071

申请日：2012-03-28

申请人： Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

发明人： Lee Chen ,  Barton Lane ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC分类号： G01T1/185 ,  H01J49/48 ,  H01J37/32 ,  H05H1/00

CPC分类号： H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

摘要： An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.

摘要翻译： 一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。 入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。 离子收集器通过第一电压源耦合到入口电网。 选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。 离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

公开(公告)号：US20120248311A1

公开(公告)日：2012-10-04

申请号：US13433088

申请日：2012-03-28

申请人： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

发明人： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC分类号： G01T1/16 ,  B23K31/02 ,  H01S4/00

CPC分类号： H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

摘要： A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

摘要翻译： 制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。 处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。 处理第三衬底以形成其中具有第三通道的离子收集器。 入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

公开(公告)号：US20110174606A1

公开(公告)日：2011-07-21

申请号：US12688755

申请日：2010-01-15

申请人： Merritt Funk ,  Lee Chen ,  Radha Sundararajan

发明人： Merritt Funk ,  Lee Chen ,  Radha Sundararajan

IPC分类号： B01J19/08

CPC分类号： H01J37/3244 ,  H01J37/32009 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/338

摘要： The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

摘要翻译： 本发明可以提供使用准中性束（Q-NB）固化系统实时处理衬底以提高光致抗蚀剂层的耐蚀刻性的设备和方法。 此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。

公开(公告)号：US07502709B2

公开(公告)日：2009-03-10

申请号：US11390412

申请日：2006-03-28

申请人： Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

发明人： Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

IPC分类号： G06F3/00

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of monitoring a dual damascene procedure that includes calculating a pre-processing confidence map for a damascene process, the pre-processing confidence map including confidence data for a first set of dies on the wafer. An expanded pre-processing measurement recipe is established for the damascene process when one or more values in the pre-processing confidence map are not within confidence limits established for the damascene process. A reduced pre-processing measurement recipe for the first damascene process is established when one or more values in the pre-processing confidence map are within confidence limits established for the damascene process.

摘要翻译： 一种监测双镶嵌程序的方法，包括计算镶嵌过程的预处理置信度图，所述预处理置信图包括晶片上的第一组模具的置信度数据。 当预处理置信图中的一个或多个值不在为大马士革过程建立的置信限度内时，为镶嵌过程建立扩展的预处理测量配方。 当预处理置信图中的一个或多个值在为大马士革过程建立的置信限度内时，建立了用于第一镶嵌工艺的减少的预处理测量配方。

公开(公告)号：US07324193B2

公开(公告)日：2008-01-29

申请号：US11396214

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： G06F15/18 ,  G06N3/08

CPC分类号： G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

摘要翻译： 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

公开(公告)号：US20070232045A1

公开(公告)日：2007-10-04

申请号：US11394592

申请日：2006-03-30

申请人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

发明人： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H01L21/44

CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76813 ,  H01L22/12

摘要： A method of assessing damage of a dual damascene structure includes obtaining a wafer after the wafer has been processed using a dual damascene process. A first damage-assessment procedure is performed on the wafer using an optical metrology process to gather damage-assessment data for a first set of measurements sites on the wafer. For each measurement site in the first set of measurement sites, the optical metrology process determines an amount of damage of a damaged area of a periodic grating in the measurement site. The damage-assessment data includes the amount of damage determined by the optical metrology process. A first damage-assessment map is created for the dual damascene process. The first damage-assessment includes the damage-assessment data and the locations of the first set of measurement sites on the wafer. One or more values in the damage-assessment map are compared to damage-assessment limits established for the dual damascene process to identify the wafer as a damaged or undamaged wafer.

摘要翻译： 评估双镶嵌结构的损伤的方法包括在使用双镶嵌工艺处理晶片之后获得晶片。 使用光学测量过程在晶片上执行第一损伤评估程序以收集晶片上的第一组测量位置的损伤评估数据。 对于第一组测量点中的每个测量位置，光学测量过程确定测量位置中周期性光栅的损坏区域的损伤量。 损伤评估数据包括由光学计量过程确定的损伤量。 为双镶嵌工艺创建了第一个损伤评估图。 第一次损伤评估包括损伤评估数据和晶片上第一组测量位置的位置。 将损伤评估图中的一个或多个值与为双镶嵌工艺建立的损伤评估限制进行比较，以将晶片识别为损坏或未损坏的晶片。

公开(公告)号：US08968588B2

公开(公告)日：2015-03-03

申请号：US13436458

申请日：2012-03-30

申请人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

发明人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

摘要翻译： 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

公开(公告)号：US20130256272A1

公开(公告)日：2013-10-03

申请号：US13436458

申请日：2012-03-30

申请人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

发明人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H05H1/24 ,  B44C1/22 ,  C23C16/511 ,  C23C16/52

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

摘要翻译： 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。