利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.024 秒)

    ON-CHIP CAPACITORS WITH A VARIABLE CAPACITANCE FOR A RADIOFREQUENCY INTEGRATED CIRCUIT
    22.
    发明申请
    ON-CHIP CAPACITORS WITH A VARIABLE CAPACITANCE FOR A RADIOFREQUENCY INTEGRATED CIRCUIT 有权
    具有适用于无线电综合电路的可变电容的片上电容器

    公开(公告)号：US20120262229A1

    公开(公告)日：2012-10-18

    申请号：US13534355

    申请日：2012-06-27

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H01L29/93 ,  G06F17/50 ,  H01L21/329

    CPC分类号： H01G7/00 ,  G06F17/5054 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases.

    摘要翻译： 制造具有可变电容的片上电容器的方法，以及调节片上电容器的电容和片上电容器的设计结构的方法。 该方法包括形成配置为以相反极性供电的第一和第二端口，第一和第二电极以及第一和第二压力控制单元。 该方法包括配置第一电压控制单元以选择性地将第一电极与第一端口耦合，以及第二电压控制单元以选择性地将第二电极与第二端口耦合。 当第一电极通过第一电压控制单元与第一端口耦合，并且第二电极通过第二电压控制单元与第二端口耦合时，片上电容器的电容增加。

    SEMICONDUCTOR GROUND SHIELD
    25.
    发明申请
    SEMICONDUCTOR GROUND SHIELD 有权
    半导体接地屏蔽

    公开(公告)号：US20090146247A1

    公开(公告)日：2009-06-11

    申请号：US12371662

    申请日：2009-02-16

    申请人： Mete Erturk ,  Alvin J. Joseph ,  Anthony K. Stamper

    发明人： Mete Erturk ,  Alvin J. Joseph ,  Anthony K. Stamper

    IPC分类号： H01L29/70

    CPC分类号： H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A ground shield is disclosed that includes a ‘cheesed’ metal positioned within a dielectric layer and a metal region positioned within a first metal level over the cheesed metal. The ground shield can have different forms depending on the metal used, and provisions are made to prevent diffusion of copper (Cu) when that is used as the metal in the cheese metal of the ground shield. The ground shield provides a low resistance, very thick metal at a first metal (M1) level for passive RF elements in conjunction with the standard back-end-of-line (BEOL) integration. The invention also includes a method of forming the ground shield.

    摘要翻译： 公开了一种接地屏蔽，其包括位于电介质层内的“干酪”金属和位于干酪金属上的第一金属层内的金属区域。 接地屏蔽可以根据所使用的金属具有不同的形式，并且当用作接地屏蔽的奶酪金属中的金属时，设置防止铜（Cu）的扩散。 接地屏蔽为第一金属（M1）级别提供低电阻，非常厚的金属，用于与标准后端（BEOL）集成结合的无源RF元件。 本发明还包括形成接地屏蔽的方法。

    Semiconductor ground shield method
    26.
    发明授权
    Semiconductor ground shield method 失效
    半导体接地屏蔽法

    公开(公告)号：US07501690B2

    公开(公告)日：2009-03-10

    申请号：US10908354

    申请日：2005-05-09

    申请人： Mete Erturk ,  Alvin J. Joseph ,  Anthony K. Stamper

    发明人： Mete Erturk ,  Alvin J. Joseph ,  Anthony K. Stamper

    IPC分类号： H01L29/70

    CPC分类号： H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A ground shield is disclosed that includes a ‘cheesed’ metal positioned within a dielectric layer and a metal region positioned within a first metal level over the cheesed metal. The ground shield can have different forms depending on the metal used, and provisions are made to prevent diffusion of copper (Cu) when that is used as the metal in the cheese metal of the ground shield. The ground shield provides a low sheet resistance, very thick metal at a first metal (M1) level for passive RF elements in conjunction with the standard back-end-of-line (BEOL) integration. The invention also includes a method of forming the ground shield.

    摘要翻译： 公开了一种接地屏蔽，其包括位于电介质层内的“干酪”金属和位于干酪金属上的第一金属层内的金属区域。 接地屏蔽可以根据所使用的金属具有不同的形式，并且当用作接地屏蔽的奶酪金属中的金属时，设置防止铜（Cu）的扩散。 接地屏蔽层为标准后端（BEOL）集成的无源RF元件提供了第一金属（M1）级别的低电阻，非常厚的金属。 本发明还包括形成接地屏蔽的方法。

    STRUCTURE FOR INTEGRATING AN RF SHIELD STRUCTURE IN A CARRIER SUBSTRATE
    28.
    发明申请
    STRUCTURE FOR INTEGRATING AN RF SHIELD STRUCTURE IN A CARRIER SUBSTRATE 审中-公开
    在载体基板上集成RF屏蔽结构的结构

    公开(公告)号：US20080116541A1

    公开(公告)日：2008-05-22

    申请号：US11561451

    申请日：2006-11-20

    申请人： Mete Erturk ,  Robert A. Groves ,  Anthony K. Stamper

    发明人： Mete Erturk ,  Robert A. Groves ,  Anthony K. Stamper

    IPC分类号： H01L23/552 ,  H01L21/02

    CPC分类号： H01L23/5225 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/0224 ,  H01L2924/00

    摘要： A structure for shielding high frequency passive elements includes a first face of a semi-conductive substrate in parallel with a second face of a non-conductive substrate. The first face of the semi-conductive substrate is substantially parallel to a second face thereof. A passive element is disposed in the non-conductive substrate and is isolated from the second face of the non-conductive substrate. A plurality of conductive conduits disposed in the semi-conductive substrate extends from the first face to the second face thereof, each of the conduits isolated from one another by the semi-conductive substrate material and disposed substantially beneath the passive element. A ground plane disposed on the second face of the semi-conductive substrate electrically connects the conductive conduits disposed therein. An electrical connection between an electronic circuit in the semi-conductive substrate, the passive element and the ground plane holds the passive device and the ground plane at different potentials.

    摘要翻译： 用于屏蔽高频无源元件的结构包括与非导电衬底的第二面平行的半导电衬底的第一面。 半导体基板的第一面基本平行于其第二面。 无源元件设置在非导电衬底中，并且与非导电衬底的第二面隔离。 设置在半导电基板中的多个导电导管从第一面延伸到第二面，每个导管通过半导电基板材料彼此隔离并且基本上设置在无源元件的下方。 设置在半导电基板的第二面上的接地平面电连接设置在其中的导电导管。 半导体衬底中的电子电路，无源元件和接地平面之间的电连接将无源器件和接地平面保持在不同的电位。

    On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit
    29.
    发明授权
    On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit 有权
    具有用于射频集成电路的可变电容的片上电容器

    公开(公告)号：US08809144B2

    公开(公告)日：2014-08-19

    申请号：US13534355

    申请日：2012-06-27

    申请人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    发明人： Douglas M. Daley ,  Mete Erturk ,  Edward J. Gordon

    IPC分类号： H01L21/8234

    CPC分类号： H01G7/00 ,  G06F17/5054 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases.

    摘要翻译： 制造具有可变电容的片上电容器的方法，以及调节片上电容器的电容和片上电容器的设计结构的方法。 该方法包括形成配置为以相反极性供电的第一和第二端口，第一和第二电极以及第一和第二压力控制单元。 该方法包括配置第一电压控制单元以选择性地将第一电极与第一端口耦合，以及第二电压控制单元以选择性地将第二电极与第二端口耦合。 当第一电极通过第一电压控制单元与第一端口耦合，并且第二电极通过第二电压控制单元与第二端口耦合时，片上电容器的电容增加。