Integrated electro-optical package and method of fabrication
    21.
    发明授权
    Integrated electro-optical package and method of fabrication 失效
    集成电光封装及其制造方法

    公开(公告)号:US6022760A

    公开(公告)日:2000-02-08

    申请号:US118879

    申请日:1998-07-20

    CPC分类号: H01S5/423 H01S5/02248

    摘要: An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.

    摘要翻译: 一种包括双面光电装置的集成电光学封装,由在其第一主表面上形成的发光器件阵列(LED)的衬底和形成在相对的第一主表面上的至少一个垂直腔表面发射激光器 第二主要表面的基材。 安装结构形成为允许将双面光电装置安装在内部主表面上,并且还具有用于与光电装置的LED和VCSEL配合的电导体。 具有用于与安装结构和双面光电装置对接的电连接的驱动器基板。 通过形成在驱动器基板上的连接焊盘连接到安装结构和双面光电器件的多个驱动电路。

    Dual sided integrated electro-optical package
    22.
    发明授权
    Dual sided integrated electro-optical package 失效
    双面集成电光封装

    公开(公告)号:US5821571A

    公开(公告)日:1998-10-13

    申请号:US902689

    申请日:1997-07-30

    摘要: An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.

    摘要翻译: 一种包括双面光电装置的集成电光学封装,由在其第一主表面上形成的发光器件阵列(LED)的衬底和形成在相对的第一主表面上的至少一个垂直腔表面发射激光器 第二主要表面的基材。 安装结构形成为允许将双面光电装置安装在内部主表面上,并且还具有用于与光电装置的LED和VCSEL配合的电导体。 具有用于与安装结构和双面光电装置对接的电连接的驱动器基板。 通过形成在驱动器基板上的连接焊盘连接到安装结构和双面光电器件的多个驱动电路。

    Integrated electro-optic package for reflective spatial light modulators
    23.
    发明授权
    Integrated electro-optic package for reflective spatial light modulators 失效
    用于反射空间光调制器的集成电光封装

    公开(公告)号:US5543958A

    公开(公告)日:1996-08-06

    申请号:US360504

    申请日:1994-12-21

    摘要: An array of reflective liquid crystal spatial light modulator pixels is formed on a substrate with a light polarizing layer positioned in overlying relationship to the array. An optical waveguide is positioned adjacent the polarizing layer and has a light source mounted adjacent an end thereof so that light is directed into the optical waveguide and further has a plurality of diffraction gratings formed therein so that deflected light evenly illuminates the array and allows passage of reflected light from the array back through the waveguide. Electrical connections are made from the array, through leads in the waveguide and to external contacts. A diffuser is mounted in overlying and spaced relationship to the waveguide to form an image plane for reflected light from the array.

    摘要翻译: 反射型液晶空间光调制器像素阵列形成在基板上,其中光偏振层位于与阵列重叠的位置上。 光波导位于偏振层附近并且具有邻近其端部安装的光源,使得光被引导到光波导中,并且还具有形成在其中的多个衍射光栅,使得偏转的光均匀地照射阵列并允许 来自阵列的反射光通过波导返回。 电气连接由阵列,通过波导中的引线和外部触点制成。 扩散器以与波导重叠和间隔的关系安装,以形成来自阵列的反射光的图像平面。

    Integrated electro-optic package for reflective spatial light modulators
    25.
    发明授权
    Integrated electro-optic package for reflective spatial light modulators 失效
    用于反射空间光调制器的集成电光封装

    公开(公告)号:US5467215A

    公开(公告)日:1995-11-14

    申请号:US360510

    申请日:1994-12-21

    摘要: An array of reflective LCSLM pixels formed on a substrate with a light polarizing layer positioned in overlying relationship to the array. A light source mounted in an optically clear support positioned in overlying relationship to and spaced from the array, so that light evenly illuminates the array through the support and allows passage of reflected light from the array back through the support. Electrical connections are made from the array, through leads in the support and to external contacts. A diffuser mounted in overlying and spaced relationship to the support to form an image plane for reflected light from the array.

    摘要翻译: 形成在基板上的反射LCSLM像素的阵列,其中光偏振层位于与阵列相对的关系中。 安装在光学透明支架中的光源,其定位成与阵列相对并且与阵列隔开,使得光通过支撑件均匀地照射阵列,并允许来自阵列的反射光通过支撑件返回通过支撑件。 电气连接通过阵列,通过支撑中的引线和外部触点进行。 扩散器,与支撑件重叠并且间隔开,形成用于来自阵列的反射光的图像平面。

    Long wavelength light emitting vertical cavity surface emitting laser
and method of fabrication
    26.
    发明授权
    Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication 失效
    长波长发光垂直腔表面发射激光器及其制造方法

    公开(公告)号:US6121068A

    公开(公告)日:2000-09-19

    申请号:US47954

    申请日:1998-03-26

    摘要: A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.

    摘要翻译: 用于光通信的长波长垂直腔表面发射激光器(VCSEL)和制造方法,其包括在支撑衬底上制造有源VCSEL结构,以及在硅衬底上制造高反射性DBR镜结构。 DBR镜结构包括使用SOI晶片融合技术利用外延生长技术和/或晶片结合制造的氧化硅材料和硅材料的交替层。 在制造最终的VCSEL器件期间,Si / SiO 2 DBR镜结构被晶片结合到有源VCSEL结构。 选择性地去除主动VCSEL结构支撑衬底,以便能够定位第二DBR反射镜堆叠。 最终的VCSEL器件的特征在于发射红外光。

    Visible light emitting vertical cavity surface emitting laser with
gallium phosphide contact layer and method of fabrication
    27.
    发明授权
    Visible light emitting vertical cavity surface emitting laser with gallium phosphide contact layer and method of fabrication 失效
    可见光发射垂直腔表面发射激光器与磷化镓接触层及其制造方法

    公开(公告)号:US5923696A

    公开(公告)日:1999-07-13

    申请号:US774822

    申请日:1996-12-27

    摘要: A stack of distributed Bragg reflectors is disposed on the surface of a semiconductor substrate. The stack includes a plurality of alternating layers of material having alternating refractive indexes with the stack having a first dopant type. A first cladding region is disposed on the stack with an active area disposed on the first cladding region. The active area includes at least two barrier layers and a quantum well layer. A second cladding region is disposed on the active area with a stack of distributed Bragg reflectors disposed on the cladding region. A contact region is disposed on the second stack of distributed Bragg reflectors. The contact region includes a magnesium doped gallium phosphide material.

    摘要翻译: 分布式布拉格反射器的堆叠被布置在半导体衬底的表面上。 堆叠包括具有交替折射率的多个交替层的材料,堆叠具有第一掺杂剂类型。 第一包层区域设置在堆叠上,具有设置在第一包层区域上的有源区域。 有源区包括至少两个势垒层和量子阱层。 第二包层区域设置在有源区上,并且布置在包层区域上的分布式布拉格反射器堆叠。 接触区域布置在分布布拉格反射器的第二堆叠上。 接触区域包括掺杂镁的磷化镓材料。

    Long wavelength vertical cavity surface emitting laser with
photodetector for automatic power control and method of fabrication
    28.
    发明授权
    Long wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabrication 失效
    长波长垂直腔表面发射激光器,具有用于自动功率控制的光电检测器和制造方法

    公开(公告)号:US5943357A

    公开(公告)日:1999-08-24

    申请号:US912605

    申请日:1997-08-18

    摘要: A long wavelength VCSEL with a photodetector, wherein the VCSEL includes a first and second stack of DBRs disposed on a first surface of a first substrate element, having an active region sandwiched therebetween, and a PIN photodetector including a first doped region disposed on a second substrate element, a undoped region disposed on the first doped region, and a second doped region disposed on the undoped region. The PIN photodetector is mounted to an opposed surface of the first substrate element, thereby monitoring a back VCSEL emission. The device is fabricated to allow for automatic power control (APC) of the VCSEL.

    摘要翻译: 一种具有光电检测器的长波长VCSEL,其中所述VCSEL包括布置在第一衬底元件的第一表面上的第一和第二堆叠DBR,所述第一和第二叠层的DBR具有夹在其间的有源区和PIN光检测器,所述PIN光检测器包括设置在第二衬底元件上的第一掺杂区域 衬底元件,设置在第一掺杂区域上的未掺杂区域,以及设置在未掺杂区域上的第二掺杂区域。 PIN光检测器安装在第一衬底元件的相对表面上,从而监测反向VCSEL发射。 该器件被制造成允许VCSEL的自动功率控制(APC)。

    Method of growing gallium nitride on a spinel substrate
    29.
    发明授权
    Method of growing gallium nitride on a spinel substrate 失效
    在尖晶石衬底上生长氮化镓的方法

    公开(公告)号:US5741724A

    公开(公告)日:1998-04-21

    申请号:US774819

    申请日:1996-12-27

    摘要: A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.

    摘要翻译: 一种通过提供具有表面的支撑衬底在尖晶石衬底上生长氮化镓的方法,并且在支撑衬底的表面上设置多个缓冲层。 多个缓冲层包括与尖晶石衬底失配百分比低的氮氧化铝的第一缓冲层。 第二缓冲层设置在第一缓冲层上,并且包括具有低位错密度的多层梯度的氮氧化铝。 氮化铝的第三缓冲层设置在第二缓冲层上。 氮化镓的第四缓冲层设置在第三缓冲层上。 随后,在第四缓冲层上制造诸如激光,LED或检测器之类的光子器件结构,诸如场效应晶体管或调制掺杂场效应晶体管的电子器件结构或光波导。

    Short wavelength VCSEL
    30.
    发明授权
    Short wavelength VCSEL 失效
    短波长VCSEL

    公开(公告)号:US5638392A

    公开(公告)日:1997-06-10

    申请号:US441270

    申请日:1995-05-15

    摘要: A short wavelength vertical cavity surface emitting laser (101) is provided. A substrate (102) having a surface (103), wherein the substrate (102) includes gallium arsenide phosphide is formed. A first stack of mirrors (106) overlying the first surface (103) of the substrate (102) is formed. A first cladding region (107) is formed overlying the first stack of mirrors (106). An active region (108) is formed overlying the first cladding region (107). A second cladding region (109) is formed overlying the active region (108). A second stack of mirrors (110) is formed overlying the second cladding region (109). A contact region (126) is formed overlying the second stack of mirrors (110).

    摘要翻译: 提供了一种短波长垂直腔面发射激光器(101)。 具有表面(103)的基板(102),其中形成基板(102)包括砷化镓磷化物。 形成覆盖衬底(102)的第一表面(103)的第一叠反射镜(106)。 第一包层区域(107)形成在第一反射镜叠层(106)上。 在第一包层区(107)上形成有源区(108)。 第二包层区域(109)形成在有源区域(108)上。 在第二包层区域(109)上形成第二层反射镜(110)。 接触区域(126)形成在第二反射镜叠层(110)上。