-
公开(公告)号：US20220020403A1
公开(公告)日：2022-01-20
申请号：US17374601
申请日：2021-07-13
Applicant: Micron Technology, Inc.
Inventor： Aparna U. Limaye , Timothy Mowry Hollis
Abstract: Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. Example memory devices, systems and methods include a multiplexer circuit to further facilitate use of slower, and wider bandwidth memory devices. Devices and methods described may be configured to substantially match the capacity of a narrower, higher speed host interface.
-
公开(公告)号：US11144214B2
公开(公告)日：2021-10-12
申请号：US16522454
申请日：2019-07-25
Applicant: Micron Technology, Inc.
Inventor： Rachael R. Carlson , Aparna U. Limaye , Diana C. Majerus , Debra M. Bell , Shea M. Morrison
Abstract: Apparatuses and methods related to memory authentication. Memory devices can be authenticated utilizing authentication codes. An authentication code can be generated based on information stored in a fuse array of the memory device. The authentication code can be stored in the memory device. The stored authentication code can be compared to a captured authentication code based on fuse array information broadcast to memory components of the memory device. The authenticity of the memory device can be determined based on the comparison and can result in placing the memory device in an unlocked state.
-
公开(公告)号：US20210118852A1
公开(公告)日：2021-04-22
申请号：US16939756
申请日：2020-07-27
Applicant: Micron Technology, Inc.
Inventor： Owen R. Fay , Randon K. Richards , Aparna U. Limaye , Dong Soon Lim , Chan H. Yoo , Bret K. Street , Eiichi Nakano , Shijian Luo
IPC: H01L25/065 , H01L25/18 , H01L23/00 , H01L23/552 , H01L23/66 , H01L21/78 , H01L21/66 , H01L25/00 , H01Q1/48 , H01Q1/22
Abstract: Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate, each microelectronic device comprising an active surface having bond pads operably coupled to conductive traces extending over a dielectric material to via locations beyond at least one side of the stack, and vias extending through the dielectric materials at the via locations and comprising conductive material in contact with at least some of the conductive traces of each of the two or more electronic devices and extending to exposed conductors of the substrate. Methods of fabrication and related electronic systems are also disclosed.
-
公开(公告)号：US20210118850A1
公开(公告)日：2021-04-22
申请号：US16939678
申请日：2020-07-27
Applicant: Micron Technology, Inc.
Inventor： Randon K. Richards , Aparna U. Limaye , Owen R. Fay , Dong Soon Lim
IPC: H01L25/065 , H01L25/18 , H01L23/00 , H01L23/552 , H01L23/64 , H01L21/78 , H01L21/66 , H01L25/00
Abstract: Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.
-
公开(公告)号：US10950313B1
公开(公告)日：2021-03-16
申请号：US16553241
申请日：2019-08-28
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Avani F. Trivedi , Tracy D. Evans , Carla L. Christensen , Tomoko Ogura Iwasaki , Aparna U. Limaye
Abstract: Methods of operating a memory having a first pool of memory cells having a first storage density and a second pool of memory cells having a second storage density greater than the first storage density, as well as apparatus configured to perform similar methods, might include determining whether a value of an indication of available power is less than a threshold, and, in response to determining that the value of the indication of available power is less than the threshold, increasing a size of the first pool of memory cells, limiting write operations of the memory to the first pool of memory cells, and postponing movement of data from the first pool of memory cells to the second pool of memory cells.
-
Patent Agency Ranking
公开(公告)号：US20210035917A1
公开(公告)日：2021-02-04
申请号：US16524989
申请日：2019-07-29
Applicant: Micron Technology, Inc.
Inventor： Owen R. Fay , Dong Soon Lim , Randon K. Richards , Aparna U. Limaye
IPC: H01L23/552 , H01L23/66 , H01Q1/22 , H01L23/31 , H01L21/56
Abstract: Semiconductor devices with antennas and electromagnetic interference (EMI) shielding, and associated systems and methods, are described herein. In one embodiment, a semiconductor device includes a semiconductor die coupled to a package substrate. An antenna structure is disposed over and/or adjacent the semiconductor die. An electromagnetic interference (EMI) shield is disposed between the semiconductor die and the antenna structure to shield at least the semiconductor die from electromagnetic radiation generated by the antenna structure and/or to shield the antenna structure from interference generated by the semiconductor die. A first dielectric material and/or a thermal interface material can be positioned between the semiconductor die and the EMI shield, and a second dielectric material can be positioned between the EMI shield and the antenna structure. In some embodiments, the semiconductor device includes a package molding over at least a portion of the antenna, the EMI shield, and/or the second dielectric material.
-
公开(公告)号：US20210026542A1
公开(公告)日：2021-01-28
申请号：US16522454
申请日：2019-07-25
Applicant: Micron Technology, Inc.
Inventor： Rachael R. Carlson , Aparna U. Limaye , Diana C. Majerus , Debra M. Bell , Shea M. Morrison
Abstract: Apparatuses and methods related to memory authentication. Memory devices can be authenticated utilizing authentication codes. An authentication code can be generated based on information stored in a fuse array of the memory device. The authentication code can be stored in the memory device. The stored authentication code can be compared to a captured authentication code based on fuse array information broadcast to memory components of the memory device. The authenticity of the memory device can be determined based on the comparison and can result in placing the memory device in an unlocked state.
-
公开(公告)号：US20240260171A1
公开(公告)日：2024-08-01
申请号：US18632122
申请日：2024-04-10
Applicant: Micron Technology, Inc.
Inventor： M. Ataul Karim , David K. Ovard , Aparna U. Limaye , Timothy M. Hollis
CPC classification number: H05K1/0233 , H04B3/32 , H04B3/487 , H05K1/0228
Abstract: Methods, systems, and devices for crosstalk cancellation for signal lines are described. In some examples, a device (e.g., a host device or a memory device) may generate a first signal and may invert the first signal to obtain an inverted first signal. The device may obtain a second signal based on attenuating a first range of frequencies of the inverted first signal and a second range of frequencies of the inverted first signal, where the first range of frequencies is below a first threshold frequency and the second range of frequencies is above a second threshold frequency that is greater than the first threshold frequency. The device may transmit the first signal via a first signal line of a set of signal lines and the second signal line via a second signal line of the set of signal lines.
-
公开(公告)号：US11880574B2
公开(公告)日：2024-01-23
申请号：US17497212
申请日：2021-10-08
Applicant: Micron Technology, Inc.
Inventor： Rachael R. Carlson , Aparna U. Limaye , Diana C Majerus , Debra M. Bell , Shea M. Morrison
CPC classification number: G06F3/0622 , G06F3/0637 , G06F3/0688 , G06F21/44 , G06F21/79 , G11C29/44 , H04L9/0866
Abstract: Apparatuses and methods related to memory authentication. Memory devices can be authenticated utilizing authentication codes. An authentication code can be generated based on information stored in a fuse array of the memory device. The authentication code can be stored in the memory device. The stored authentication code can be compared to a captured authentication code based on fuse array information broadcast to memory components of the memory device. The authenticity of the memory device can be determined based on the comparison and can result in placing the memory device in an unlocked state.
-
公开(公告)号：US20230008292A1
公开(公告)日：2023-01-12
申请号：US17932401
申请日：2022-09-15
Applicant: Micron Technology, Inc.
Inventor： Randon K. Richards , Aparna U. Limaye , Owen R. Fay , Dong Soon Lim
IPC: H01L25/065 , H01L25/18 , H01L23/00 , H01L23/552 , H01L23/64 , H01L21/78 , H01L21/66 , H01L25/00 , H01L23/66 , H01Q1/22 , H01Q1/48
Abstract: Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.
-
-
-
-
-
-
-
-
-
Search Results
52
records
(took 0.019 seconds)
