中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

32 records (took 0.014 seconds)

    Phase change memory stack with treated sidewalls
    21.
    发明授权
    Phase change memory stack with treated sidewalls 有权

    公开(公告)号：US10177198B2

    公开(公告)日：2019-01-08

    申请号：US15613823

    申请日：2017-06-05

    Applicant: Micron Technology, Inc.

    Inventor： Yongjun Jeff Hu ,  Tsz W. Chan ,  Swapnil Lengade ,  Everett Allen McTeer ,  Shu Qin

    IPC: H01L27/24 ,  H01L45/00

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

    MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDING THE MEMORY CELLS, AND METHODS OF FORMING SAME
    24.
    发明申请
    MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDING THE MEMORY CELLS, AND METHODS OF FORMING SAME 有权
    包含介电材料的记忆体，包括记忆细胞的记忆装置及其形成方法

    公开(公告)号：US20160064666A1

    公开(公告)日：2016-03-03

    申请号：US14476312

    申请日：2014-09-03

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  D.V. Nirmal Ramaswamy ,  Qian Tao ,  Yongjun Jeff Hu ,  Everett A. McTeer

    IPC: H01L45/00

    CPC classification number: H01L45/145 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/1608

    Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

    Abstract translation: 一种存储单元，包括在衬底上的第一电极上的阈值切换材料。 存储单元包括阈值开关材料上的第二电极和阈值开关材料与第一电​​极和第二电极中的至少一个之间的至少一个电介质材料。 记忆材料覆盖在第二电极上。 电介质材料可以直接接触阈值开关材料和第一电极和第二电极中的每一个。 公开了仅在阈值开关材料和电极之间仅包含一个介电材料的存储单元。 还描述了包括存储单元的存储器件和形成存储器单元的方法。

    Methods of forming memory cells and memory devices
    26.
    发明授权
    Methods of forming memory cells and memory devices 有权

    公开(公告)号：US10923657B2

    公开(公告)日：2021-02-16

    申请号：US16521046

    申请日：2019-07-24

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  Durai Vishak Nirmal Ramaswamy ,  Qian Tao ,  Yongjun Jeff Hu ,  Everett A. McTeer

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS
    28.
    发明申请
    PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS 审中-公开

    公开(公告)号：US20190355902A1

    公开(公告)日：2019-11-21

    申请号：US16266777

    申请日：2019-02-04

    Applicant: Micron Technology, Inc.

    Inventor： Tsz W. Chan ,  Yongjun Jeff Hu ,  Swapnil Lengade ,  Shu Qin ,  Everett Allen McTeer

    IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

    Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

Patent Agency Ranking