公开(公告)号：US20130029182A1

公开(公告)日：2013-01-31

申请号：US13645947

申请日：2012-10-05

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11C7/00

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

公开(公告)号：US20130029035A1

公开(公告)日：2013-01-31

申请号：US13645958

申请日：2012-10-05

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： H01F41/22 ,  C23C14/35

CPC分类号： G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

公开(公告)号：US08335105B2

公开(公告)日：2012-12-18

申请号：US11715097

申请日：2007-03-07

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Kunliang Zhang ,  Min Li

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Kunliang Zhang ,  Min Li

IPC分类号： G11C11/14

CPC分类号： G11C11/15

摘要： By inserting a spin polarizing layer (typically pure iron) within the free layer of a MTJ or GMR memory cell, dR/R can be improved without significantly affecting other free layer properties such as Hc. Additional performance improvements can be achieved by also inserting a surfactant layer (typically oxygen) within the free layer.

摘要翻译： 通过在MTJ或GMR存储器单元的自由层内插入自旋偏振层（通常为纯铁），可以改善dR / R，而不显着影响其它自由层性质如Hc。 还可以通过在自由层内插入表面活性剂层（通常为氧）来实现另外的性能改进。

公开(公告)号：US08325449B2

公开(公告)日：2012-12-04

申请号：US11895719

申请日：2007-08-27

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021

摘要： Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided.

摘要翻译： 等离子体氮化代替等离子体氧化，用于形成CCP层。 Al，Mg，Hf等都在这些条件下形成绝缘氮化物。 在等离子体氮化和/或在220℃以上的温度下进行后退火时，将结构维持在至少150℃的温度下，确保不会形成氮化铜。 此外，也避免了暴露的磁性层（主要是固定和自由层）的分子氧的非预期氧化。

公开(公告)号：US08305711B2

公开(公告)日：2012-11-06

申请号：US12660819

申请日：2010-03-03

申请人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

发明人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

IPC分类号： G11B5/187 ,  G11B5/127 ,  G11B5/02

CPC分类号： G11B5/314 ,  G11B5/1278 ,  G11B2005/0024

摘要： A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to

摘要翻译： 公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。 前缘和后缘由具有三个部分的两个侧壁连接。 每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。 每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。 一种形成写入器的方法从绝缘层中的梯形写入极开始。 使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并将极宽度窄化到<50nm而不会破裂。 最后，在STO上形成一个后挡板。

公开(公告)号：US20120263581A1

公开(公告)日：2012-10-18

申请号：US13446807

申请日：2012-04-13

申请人： Yue Li ,  Lisheng Liu ,  Hongjian Zhang ,  Zongqian Qi ,  Awade Badafem ,  Min Li

发明人： Yue Li ,  Lisheng Liu ,  Hongjian Zhang ,  Zongqian Qi ,  Awade Badafem ,  Min Li

IPC分类号： F04D29/00 ,  F04D13/06

CPC分类号： F04D29/588 ,  A47L15/4225 ,  A47L15/4285 ,  A47L2401/12 ,  D06F39/04 ,  D06F39/085

摘要： A heating pump includes an electric motor, a pump housing fixed to the motor, an impeller driven by the motor, and a ring heater with an inner hole for heating fluid in the pump housing. The pump housing has a pump chamber and a pump inlet and a pump outlet which are in fluid communication with the pump chamber. The impeller is received in the pump housing and having an impeller inlet and a plurality of impeller outlets. The ring heater is disposed inside the pump chamber and between the pump inlet and the impeller. The impeller inlet is in fluid communication with the pump inlet via the inner hole.

摘要翻译： 加热泵包括电动机，固定到电动机的泵壳体，由电动机驱动的叶轮，以及具有用于加热泵壳体中的流体的内孔的环形加热器。 泵壳体具有与泵室流体连通的泵室和泵入口和泵出口。 叶轮被容纳在泵壳体中并且具有叶轮入口和多个叶轮出口。 环形加热器设置在泵室内部和泵入口与叶轮之间。 叶轮入口通过内孔与泵入口流体连通。

公开(公告)号：US08274811B2

公开(公告)日：2012-09-25

申请号：US12927699

申请日：2010-11-22

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC分类号： G11B5/127 ,  G11C11/15 ,  G11C11/16 ,  H01L43/12

CPC分类号： H03B15/006 ,  B82Y40/00 ,  G11B5/3146 ,  G11B2005/0024 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/306 ,  H01L43/08 ,  Y10T29/49034 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/1193

摘要： A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.

摘要翻译： 公开了一种自旋转移振荡器（STO）结构，其包括具有垂直磁各向异性（PMA）的两个辅助层，以使场产生层（FGL）能够在较低电流密度下实现用于MAMR应用的振荡状态。 在一个实施例中，STO形成在主极和写保护罩之间，并且FGL具有合成的反铁磁结构。 STO配置可以由种子层/自旋注入层（SIL）/间隔物/ PMA层1 / FGL /间隔物/ PMA层2 /覆盖层表示。 间隔物可以是用于巨磁阻（GMR）器件的Cu或用于隧道磁阻（TMR）器件的金属氧化物。 或者，FGL是单个铁磁层，并且第二PMA辅助层具有合成结构，其包括在籽晶层/ SIL /间隔物/ PMA辅助1 / FGL /间隔物/ PMA辅助2/2中具有相反方向的磁矩的两个PMA层， 覆盖层配置。 SIL和PMA辅助层是（CoFe / Ni）x等的层压体。

公开(公告)号：US08256499B2

公开(公告)日：2012-09-04

申请号：US12534883

申请日：2009-08-04

申请人： Min Li ,  Bi-Tao Wu

发明人： Min Li ,  Bi-Tao Wu

IPC分类号： F28F7/00 ,  H01L23/467 ,  H05K5/00

CPC分类号： H01L23/467 ,  H01L23/4006 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat dissipation device includes a heat sink, a fan and a holding frame securing the fan onto the heat sink. The holding frame is mounted on a top of the heat sink and has four beams located around the top of the heat sink and defines an opening in a central part thereof corresponding to the heat sink. The holding frame has two air-guiding plates extending inwardly and downwardly from two inner edges of two opposite beams to two opposite lateral sides of the heat sink. The fan is mounted on the holding frame and covers the opening and the two air-guiding plates of the holding frame.

摘要翻译： 散热装置包括散热器，风扇和将风扇固定到散热器上的保持框架。 保持框架安装在散热器的顶部，并且具有围绕散热器顶部的四个光束，并且在其对应于散热器的中心部分中限定开口。 保持框架具有从两个相对的梁的两个内边缘向内和向下延伸到散热器的两个相对侧面的两个空气引导板。 风扇安装在固定框架上并覆盖保持框架的开口和两个空气导向板。

公开(公告)号：US20120201297A1

公开(公告)日：2012-08-09

申请号：US13502592

申请日：2010-10-29

申请人： Chong Soon Lim ,  Min Li ,  Hai Wei Sun ,  Youji Shibahara ,  Takahiro Nishi

发明人： Chong Soon Lim ,  Min Li ,  Hai Wei Sun ,  Youji Shibahara ,  Takahiro Nishi

IPC分类号： H04N7/12

CPC分类号： H04N19/44 ,  H04N19/126 ,  H04N19/176 ,  H04N19/463 ,  H04N19/61

摘要： An image decoding method including: obtaining an old quantization scaling matrix which is a decoded quantization scaling matrix and is used for decoding a new quantization scaling matrix; obtaining, from the coded stream, an update parameter indicating an amount of change in the new quantization scaling matrix with respect to the old quantization scaling matrix; decoding the new quantization scaling matrix using the old quantization scaling matrix obtained in the obtaining of an old quantization scaling matrix and the update parameter obtained in the obtaining of an update parameter; and decoding the coded image using the new quantization scaling matrix decoded in the decoding of the new quantization scaling matrix.

摘要翻译： 一种图像解码方法，包括：获得作为解码的量化缩放矩阵的旧的量化缩放矩阵，并用于解码新的量化缩放矩阵; 从编码流中获取指示相对于旧的量化缩放矩阵的新量化缩放矩阵的变化量的更新参数; 使用在获得旧的量化缩放矩阵中获得的旧的量化缩放矩阵和在获得更新参数中获得的更新参数来解码新的量化缩放矩阵; 以及使用在新的量化缩放矩阵的解码中解码的新的量化缩放矩阵来解码编码图像。

公开(公告)号：US20120193738A1

公开(公告)日：2012-08-02

申请号：US13444497

申请日：2012-04-11

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/12

摘要： A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA

摘要翻译： 通过采用由FeCo / CoFeB / CoB，FeCo / CoB / CoFeB，FeCo / CoFe / CoB或FeCo / FeB / CoB表示的三层结构的自由层制造高性能TMR传感器。 或者，通过共溅射CoB与CoNiFe或CoNiFeM（其中M是V，Ti，Zr，Nb，Hf，Ta或Mo）分别形成的CoNiFeB或CoNiFeBM可以包括在复合自由层中或作为单个自由层 CoNiFeBM的情况。 在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。 在双层或三层实施例中，通过组合CoB（-λ）和一个或多个具有正λ的层来实现-5×10-6和5×10-6之间的磁致伸缩（λ）。