公开(公告)号：US20200382083A1

公开(公告)日：2020-12-03

申请号：US16995902

申请日：2020-08-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Satoshi TANAKA ,  Takayuki TSUTSUI ,  Yasunari UMEMOTO

IPC: H03F3/21 ,  H03F3/19 ,  H03F1/56 ,  H03F1/02 ,  H01L27/06 ,  H01L21/8252

Abstract: A power amplifier includes initial-stage and output-stage amplifier circuits, and initial-stage and output-stage bias circuits. The initial-stage amplifier circuit includes a first high electron mobility transistor having a source electrically connected to a reference potential, and a gate to which a radio-frequency input signal is inputted, and a first heterojunction bipolar transistor having an emitter electrically connected to a drain of the first high electron mobility transistor, a base electrically connected to the reference potential in an alternate-current fashion, and a collector to which direct-current power is supplied and from which a radio-frequency signal is outputted. The output-stage amplifier circuit includes a second heterojunction bipolar transistor having an emitter electrically connected to the reference potential, a base to which the radio-frequency signal outputted from the first heterojunction bipolar transistor is inputted, and a collector to which direct-current power is supplied and from which a radio-frequency output signal is outputted.

公开(公告)号：US20200373417A1

公开(公告)日：2020-11-26

申请号：US16992067

申请日：2020-08-12

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/205 ,  H01L29/10 ,  H01L21/285 ,  H01L21/308 ,  H01L21/306 ,  H01L29/66 ,  H01L29/08

Abstract: A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.

公开(公告)号：US20200052663A1

公开(公告)日：2020-02-13

申请号：US16527578

申请日：2019-07-31

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Yasunari UMEMOTO ,  Yuichi SAITO ,  Isao OBU ,  Takayuki TSUTSUI

IPC: H03F3/21 ,  H01L23/498 ,  H01F17/00 ,  H01L23/00 ,  H01L23/552 ,  H03F3/213 ,  H03F1/02 ,  H01L23/66

Abstract: A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

公开(公告)号：US20200027805A1

公开(公告)日：2020-01-23

申请号：US16588030

申请日：2019-09-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA

IPC: H01L23/31 ,  H01L23/495 ,  H01L23/00 ,  H01L21/67 ,  H01L21/56 ,  H01L21/52 ,  H01L21/683 ,  H01L21/768 ,  H01L23/48

Abstract: A semiconductor chip includes a single-crystal substrate and a metal electrode on the bottom surface of the substrate. The metal electrode has a region in which a first metal is exposed and a region in which a second metal is exposed, the second metal having a standard electrode potential different from that of the first metal.

公开(公告)号：US20190333887A1

公开(公告)日：2019-10-31

申请号：US16505390

申请日：2019-07-08

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Daisuke TOKUDA ,  Tsunekazu SAIMEI ,  Hiroaki TOKUYA

IPC: H01L23/00 ,  H01L29/205 ,  H01L29/732 ,  H01L29/737 ,  H01L29/66 ,  H01L29/20 ,  H01L29/08 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

公开(公告)号：US20190326191A1

公开(公告)日：2019-10-24

申请号：US16374674

申请日：2019-04-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masao KONDO ,  Isao OBU ,  Yasunari UMEMOTO ,  Yasuhisa YAMAMOTO ,  Masahiro SHIBATA ,  Takayuki TSUTSUI

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L23/48 ,  H03F1/30

Abstract: A semiconductor chip includes an active element on a first surface of a substrate. A heat-conductive film having a higher thermal conductivity than the substrate is disposed at a position different from a position of the active element. An insulating film covering the active element and heat-conductive film is disposed on the first surface. A bump electrically connected to the heat-conductive film is disposed on the insulating film. A via-hole extends from a second surface opposite to the first surface to the heat-conductive film. A heat-conductive member having a higher thermal conductivity than the substrate is continuously disposed from a region of the second surface overlapping the active element in plan view to an inner surface of the via-hole. The bump is connected to a land of a printed circuit board facing the first surface. The semiconductor chip is sealed with a resin.

公开(公告)号：US20190088768A1

公开(公告)日：2019-03-21

申请号：US16125234

申请日：2018-09-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Shigeki KOYA ,  Masao KONDO ,  Takayuki TSUTSUI

IPC: H01L29/737 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L21/306 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/308 ,  H01L29/66 ,  H03F3/213 ,  H03F3/195

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20180331208A1

公开(公告)日：2018-11-15

申请号：US16026841

申请日：2018-07-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7371 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/205 ,  H01L29/66242

Abstract: A collector layer of an HBT includes a high-concentration collector layer and a low-concentration collector layer thereon. The low-concentration collector layer includes a graded collector layer in which the energy band gap varies to narrow with increasing distance from the base layer. The electron affinity of the semiconductor material for the base layer is greater than that of the semiconductor material for the graded collector layer at the point of the largest energy band gap by about 0.15 eV or less. The electron velocity in the graded collector layer peaks at a certain electric field strength. In the graded collector layer, the strength of the quasi-electric field, an electric field that acts on electrons as a result of the varying energy band gap, is between about 0.3 times and about 1.8 times the peak electric field strength, the electric field strength at which the electron velocity peaks.

公开(公告)号：US20220231150A1

公开(公告)日：2022-07-21

申请号：US17714860

申请日：2022-04-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Isao OBU ,  Kaoru IDENO ,  Shigeki KOYA

IPC: H01L29/737 ,  H01L29/423 ,  H01L29/417

Abstract: A collector layer, a base layer, and an emitter layer that are disposed on a substrate form a bipolar transistor. An emitter electrode is in ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. A difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface.

公开(公告)号：US20220173702A1

公开(公告)日：2022-06-02

申请号：US17506752

申请日：2021-10-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masao KONDO ,  Yasunari UMEMOTO ,  Shaojun MA ,  Shinnosuke TAKAHASHI

IPC: H03F1/30 ,  H03F3/24

Abstract: A power amplifier circuit includes an amplification unit, a heating unit, and a control circuit. The amplification unit is configured to amplify a radio-frequency signal. The heating unit is provided adjacent to the amplification unit. The heating unit includes one or more transistors configured to generate heat that increases as the passing current increases. The control circuit is coupled to the one or more transistors. The control circuit is configured to increase the passing current when the environmental temperature is a predetermined threshold or lower.