公开(公告)号：US08098311B2

公开(公告)日：2012-01-17

申请号：US12402991

申请日：2009-03-12

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N3/14

CPC分类号： H04N5/35563 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/23229 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/365 ,  H04N5/37213 ,  H04N5/3742 ,  H04N5/3765 ,  H04N5/378

摘要： A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged unit pixels, each of which is a rectangular pixel having different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to process a plurality of signals read out from the combined plurality of unit pixels and to output the processed signals as a single signal.

摘要翻译： 固态成像装置包括像素阵列部分和信号处理部分。 像素阵列部分被配置为包括多个排列的单位像素，每个像素是在垂直和水平方向上具有不同尺寸的矩形像素，并且其中多个相邻的单元像素被组合以形成具有相同像素的正方形像素 尺寸在垂直和水平方向。 信号处理部被配置为处理从组合的多个单位像素读出的多个信号，并将处理的信号作为单个信号输出。

公开(公告)号：US08013336B2

公开(公告)日：2011-09-06

申请号：US11633284

申请日：2006-12-04

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H01L29/04

CPC分类号： H04N5/361 ,  H01L27/14632 ,  H04N5/359 ,  H04N5/367 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378

摘要： A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.

摘要翻译： 没有选择晶体管的三晶体管像素配置的固态成像器件具有特定于该装置的非选择热载流子白点的问题。 像素的非读取周期期间的偏置电流流向与紧接在前的选择像素（例如，紧接在前的选择像素本身）相关联的像素。 结果，在每个像素中出现仅一行的暗电流，并且可以显着地减少一行本身的暗电流。 因此，可以实际上消除由于非选择热载体白点引起的缺陷像素。

公开(公告)号：US07989253B2

公开(公告)日：2011-08-02

申请号：US12395948

申请日：2009-03-02

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H01L21/00

CPC分类号： G03F1/70 ,  G03F1/00

摘要： A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.

摘要翻译： 形成光刻掩模的方法包括：当形成用于制造背照式固态成像装置的光刻掩模时，通过使用其中至少部分输出端的位置反转的反向数据来形成掩模的步骤 其从与形成有光电转换元件的器件区域的布线的表面的侧面相反的表面的一侧形成入射光。

公开(公告)号：US20110180690A1

公开(公告)日：2011-07-28

申请号：US13043090

申请日：2011-03-08

申请人： Masakazu Kurukawa ,  Keiji Mabuchi

发明人： Masakazu Kurukawa ,  Keiji Mabuchi

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/1464

摘要： A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.

摘要翻译： 一种固体摄像装置，具备：对每个像素设置的光电转换部，将入射到基板的第一面的光转换为信号电荷;读取由光电转换部累积的信号电荷的电路区域;多层膜 包括绝缘膜和布线膜，所述多层膜设置在与所述第一表面相对的所述基板的第二表面上，以及至少设置在所述多层膜中的布线膜和所述基板之间的防透膜。

公开(公告)号：US07978251B2

公开(公告)日：2011-07-12

申请号：US12214692

申请日：2008-06-20

申请人： Toshifumi Wakano ,  Keiji Mabuchi

发明人： Toshifumi Wakano ,  Keiji Mabuchi

IPC分类号： H04N5/225

CPC分类号： H04N5/2254

摘要： An optical system for a CMOS sensor includes an aspherical lens with which an exit pupil distance appears short in a central region of an imaging plane and long in a peripheral region of the imaging plane. The aspherical lens functions such that the exit pupil distance monotonously increases from a central region of the imaging plane toward a peripheral region of the imaging plane. In addition, pupil correction is performed in accordance with an exit pupil distance d which satisfies (d1+d2)/2

摘要翻译： 用于CMOS传感器的光学系统包括非球面透镜，出射光瞳距离在成像平面的中心区域中短，并且在成像平面的周边区域中长。 非球面透镜的功能使得出射光瞳距离从成像平面的中心区域朝向成像平面的周边区域单调增加。 此外，根据满足（d1 + d2）/ 2

公开(公告)号：US20110102620A1

公开(公告)日：2011-05-05

申请号：US12910068

申请日：2010-10-22

申请人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

发明人： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

IPC分类号： H04N5/228 ,  H01L31/06 ,  H01L31/18 ,  H03F3/08 ,  H01L27/146

CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/2176 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

摘要翻译： 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

公开(公告)号：US20110084317A1

公开(公告)日：2011-04-14

申请号：US12970417

申请日：2010-12-16

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H01L31/113

CPC分类号： H01L27/1464 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73257 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in the semiconductor film; and (d) a rear surface electrode to which a voltage is applied on the rear surface side of the semiconductor substrate, wherein, (1) a semiconductor layer of an opposite conduction type to a charge accumulation portion of the photoelectric conversion element is formed in the semiconductor substrate under the insulation film, and (2) the same voltage as the voltage applied to the rear surface electrode is applied to the semiconductor layer.

摘要翻译： 一种背照式固体摄像器件，包括：（a）在半导体衬底的前表面侧上具有绝缘膜的半导体层; （b）构成半导体衬底中的像素的光电转换元件; （c）构成半导体膜中的像素的至少一部分晶体管; 和（d）在半导体衬底的背面侧施加有电压的背面电极，其中，（1）形成与光电转换元件的电荷蓄积部相反的导电型的半导体层， 绝缘膜下的半导体衬底，和（2）施加到背面电极的电压相同的电压施加到半导体层。

公开(公告)号：US20110042723A1

公开(公告)日：2011-02-24

申请号：US12854597

申请日：2010-08-11

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H01L31/08 ,  H01L31/18 ,  H01L31/14

CPC分类号： H01L27/14609 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14689 ,  H01L27/14692

摘要： A solid-state imaging device includes a photoelectric conversion unit that includes a first region of a first conductivity type and a second region of a second conductivity type between which a pn junction is formed, the first region and the second region being formed in a signal-readout surface of a semiconductor substrate, the second region being located at a position deeper than the first region; and a transfer transistor configured to transfer signal charges accumulated in the photoelectric conversion unit to a readout drain through a channel region that lies under a surface of the first region and horizontally adjacent to the photoelectric conversion unit, the transfer transistor being formed in the signal-readout surface. The transfer transistor includes a transfer gate electrode that extends from above the channel region with a gate insulating film therebetween to above the first region so as to extend across a step.

摘要翻译： 固态成像装置包括光电转换单元，其包括第一导电类型的第一区域和第二导电类型的第二区域，在其间形成pn结，第一区域和第二区域形成为信号 半导体衬底的读出表面，所述第二区域位于比所述第一区域更深的位置; 以及传输晶体管，被配置为通过位于所述第一区域的表面下方并与水平相邻的光电转换单元的沟道区域将累积在光电转换单元中的信号电荷传送到读出漏极，所述传输晶体管形成在信号 - 读出面。 传输晶体管包括传输栅极电极，其从沟道区域的上方延伸，其间具有栅极绝缘膜，以在第一区域之上延伸以跨越台阶。

公开(公告)号：US07816711B2

公开(公告)日：2010-10-19

申请号：US11824088

申请日：2007-06-29

申请人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

发明人： Takashi Abe ,  Ryoji Suzuki ,  Keiji Mabuchi ,  Testuya Iizuka ,  Takahisa Ueno ,  Tsutomu Haruta

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

公开(公告)号：US20100097508A1

公开(公告)日：2010-04-22

申请号：US12603059

申请日：2009-10-21

申请人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

发明人： Takeshi Yanagita ,  Keiji Mabuchi ,  Hiroaki Ishiwata

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/3532 ,  H04N5/3591 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/378

摘要： A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

摘要翻译： 固态图像传感器包括像素阵列以及由阵列中的多个像素共享的电荷 - 电压转换器，复位门和放大器。 复位栅极电源的电压设定为高于放大器电源的电压电平。 此外，从像素中的光电检测器溢出的电荷可能被丢弃到电荷 - 电压转换器中。 图像传感器还可以包括行扫描器，其被配置为使得在扫描像素阵列中的行以从其中读出信号的同时，行扫描器在共享具有像素的电荷到电压转换器的像素的光电检测器中复位电荷 读出行。 在从读出行上的像素读出信号的同时或之前进行电荷复位。