公开(公告)号：US07015079B2

公开(公告)日：2006-03-21

申请号：US10771404

申请日：2004-02-05

申请人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

发明人： Hidekazu Miyairi ,  Aiko Shiga ,  Katsumi Nomura ,  Naoki Makita ,  Takuya Matsuo

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L27/12 ,  G02F1/1362 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5×1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5×1018/cm3 to 1×1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.

摘要翻译： 通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。 此外，还提供了具有优异TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。 将促进硅结晶的金属元素添加到半导体膜中，半导体膜具有薄膜内的非晶结构和氧浓度小于5×10 18 / cm 3。 然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。 随后，除去表面上的氧化物膜。 将氧气引入到具有晶体结构的半导体膜中，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 6 > 21 3/3。 在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

公开(公告)号：US20050151132A1

公开(公告)日：2005-07-14

申请号：US11048893

申请日：2005-02-03

申请人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

发明人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04 ,  C30B1/00 ,  H01L21/00 ,  H01L21/36 ,  H01L29/10 ,  H01L29/12 ,  H01L31/036

CPC分类号： H01L29/4908 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.

公开(公告)号：US06734050B2

公开(公告)日：2004-05-11

申请号：US10229385

申请日：2002-08-28

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L2184

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

公开(公告)号：US6013544A

公开(公告)日：2000-01-11

申请号：US610227

申请日：1996-03-04

申请人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya

发明人： Naoki Makita ,  Tadayoshi Miyamoto ,  Tsukasa Shibuya

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277

摘要： A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed. A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film. Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film. Then, the upper crystalline silicon semiconductor film is removed. By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film. As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced.

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件包括通过利用形成在绝缘衬底上的具有结晶性的硅半导体膜而获得的有源区。 通过将用于促进结晶的催化剂元素引入到下部非晶硅半导体膜中，然后对下部非晶硅半导体膜进行热处理，获得结晶硅半导体膜。 此后，在所获得的下部结晶硅半导体膜上形成上部非晶硅半导体膜，随后对其进行热处理，以获得上部结晶硅半导体膜。 然后，除去上部晶体硅半导体膜。 通过该工艺，残留在下结晶硅半导体膜中的催化剂元素移动到上结晶硅半导体膜中。 结果，下层结晶硅半导体膜中的催化剂元素的浓度降低。

公开(公告)号：US5851860A

公开(公告)日：1998-12-22

申请号：US458685

申请日：1995-06-02

申请人： Naoki Makita ,  Takashi Funai

发明人： Naoki Makita ,  Takashi Funai

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1277

摘要： The semiconductor device of the invention includes: a substrate having an insulating surface; an active region formed on the insulating surface of the substrate, the active region being formed by a crystalline silicon film; and an insulating thin film formed on the active region. In the semiconductor device, the active region contains a catalyst element for promoting a crystallization of an amorphous silicon film by a heat treatment.

摘要翻译： 本发明的半导体器件包括：具有绝缘表面的衬底; 形成在所述基板的绝缘表面上的有源区，所述有源区由晶体硅膜形成; 以及形成在有源区上的绝缘薄膜。 在半导体器件中，有源区域包含用于通过热处理促进非晶硅膜的结晶的催化剂元件。

公开(公告)号：US4392638A

公开(公告)日：1983-07-12

申请号：US252601

申请日：1981-04-09

申请人： Tetsuo Kato ,  Naoki Makita

发明人： Tetsuo Kato ,  Naoki Makita

IPC分类号： F16F9/084 ,  F16F9/08

CPC分类号： F16F9/084

摘要： A vehicle suspension device includes a hydraulic damper including a vertical cylinder and a piston rod slidably extending out of the cylinder through the upper end thereof, and an air spring unit including a flexible tubular wall portion member having an inner wall mounted on the cylinder, an outer wall portion mounted on a tubular support member secured to the extending end of the piston rod and a rolling wall portion. A cylindrical housing is rotatably and sealingly mounted on the upper end of the cylinder and extends along the outer circumference of the cylinder, and the free end of the inner wall portion of the flexible tubular wall is secured to the upper end of the housing.

摘要翻译： 一种车辆悬架装置，包括：液压阻尼器，包括垂直气缸和活塞杆，所述活塞杆通过其上端可滑动地延伸出气缸;以及空气弹簧单元，其包括具有安装在气缸上的内壁的柔性管状壁部件， 安装在固定到活塞杆的延伸端的管状支撑构件上的外壁部分和滚动壁部分。 圆柱形壳体可旋转并密封地安装在气缸的上端并沿着气缸的外圆周延伸，并且柔性管状壁的内壁部分的自由端固定到壳体的上端。

公开(公告)号：US4316604A

公开(公告)日：1982-02-23

申请号：US123884

申请日：1980-02-22

申请人： Naoki Makita

发明人： Naoki Makita

IPC分类号： B60G15/00 ,  B60G17/04 ,  F16F3/07

CPC分类号： B60G15/00 ,  B60G17/04

摘要： A vehicle height adjusting device of includes a hydraulic damper having a tubular main body and a piston rod slidably projecting from one end of the main body, and an air spring unit having a resilient tubular wall member. The wall member has an inner wall portion and an outer wall portion which are closed at one end by a rolling wall portion formed of the inner and outer wall portions on relative reciprocation therebetween. The inner wall portion is sealingly connected to and surrounding the main body of the hydraulic damper, and the outer wall portion is sealingly connected to the piston rod at the projecting end portion thereof. An axial bore is formed in the projecting end portion of the piston rod for supplying pressurized gas into the air spring unit.

摘要翻译： 一种车辆高度调节装置，包括具有管状主体和从主体的一端可滑动地突出的活塞杆的液压阻尼器和具有弹性管状壁构件的空气弹簧单元。 壁构件具有内壁部分和外壁部分，该内壁部分和外壁部分在一端由在内壁和外壁部分之间的相对往复运动形成的滚动壁部分封闭。 内壁部分密封地连接到液压阻尼器的主体并围绕着液压阻尼器的主体，并且外壁部分在其突出端部处密封地连接到活塞杆。 在活塞杆的突出端部形成有用于向空气弹簧单元供给加压气体的轴向孔。

公开(公告)号：US09349340B2

公开(公告)日：2016-05-24

申请号：US13882938

申请日：2011-11-08

申请人： Masaki Saitoh ,  Naoki Makita

发明人： Masaki Saitoh ,  Naoki Makita

IPC分类号： H01L27/12 ,  G09G3/36 ,  H03K17/06

CPC分类号： G09G3/3696 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1288 ,  H03K17/063

摘要： In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.

摘要翻译： 在控制电路（27）中的至少一个操作控制TFT（27N，27P）中，在通道区域（33c）中包含产生沟道区域（33c）的杂质电平的类型的杂质作为阈值调整 使阈值调整杂质的浓度高于相同类型的其他TFT（21,25,28）的沟道区域（33c）中的阈值调整杂质的浓度，从而导致阈值的绝对值 电压大于相同类型的其它TFT（21,25,28）的电压。

公开(公告)号：US20130222219A1

公开(公告)日：2013-08-29

申请号：US13882938

申请日：2011-11-08

申请人： Masaki Saitoh ,  Naoki Makita

发明人： Masaki Saitoh ,  Naoki Makita

IPC分类号： G09G3/36 ,  H03K17/06

CPC分类号： G09G3/3696 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1288 ,  H03K17/063

摘要： In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.

摘要翻译： 在控制电路（27）中的至少一个操作控制TFT（27N，27P）中，在通道区域（33c）中包含产生沟道区域（33c）的杂质电平的类型的杂质作为阈值调整 使阈值调整杂质的浓度高于相同类型的其他TFT（21,25,28）的沟道区域（33c）中的阈值调整杂质的浓度，从而导致阈值的绝对值 电压大于相同类型的其它TFT（21,25,28）的电压。

公开(公告)号：US08247273B2

公开(公告)日：2012-08-21

申请号：US12667465

申请日：2008-06-05

申请人： Naoki Makita ,  Masato Hashimoto

发明人： Naoki Makita ,  Masato Hashimoto

IPC分类号： H01L21/00

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618

摘要： A semiconductor device includes at least one thin-film transistor 116, which includes: a crystalline semiconductor layer 120 including a region 110 to be a channel region and source and drain regions 113; a gate electrode 107 for controlling the conductivity of the region 110 to be a channel region; a gate insulating film 106 arranged between the semiconductor layer 120 and the gate electrode 107; and source and drain electrodes 115 connected to the source and drain regions 113, respectively. At least one of the source and drain regions 113 contains an element to be a donor or an acceptor and a rare-gas element, but the region 110 to be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.

摘要翻译： 半导体器件包括至少一个薄膜晶体管116，其包括：晶体半导体层120，其包括作为沟道区的区域110以及源极和漏极区113; 用于将区域110的导电性控制为沟道区的栅电极107; 布置在半导体层120和栅电极107之间的栅极绝缘膜106; 以及分别连接到源区113和漏区113的源电极115和漏电极115。 源极区域113和漏极区域113中的至少一个包含作为供体或受体的元素和稀有气体元素，但是作为沟道区域的区域110不含有稀有气体元素。 稀有气体元素的原子量大于作为供体或受体的元素的原子量。 在其厚度方向上测量的至少一个区域中的稀有气体元素的浓度从至少一个区域的上表面向其下表面连续地减小。