公开(公告)号：US20120061640A1

公开(公告)日：2012-03-15

申请号：US13037864

申请日：2011-03-01

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

IPC分类号： H01L33/06

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×1019/cubic centimeter and not more than 1×1021/cubic centimeter. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，第二导电类型的第二半导体层，发光层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部具有不小于10纳米且不大于50微米的当量圆直径。 第二半导体层设置在第一半导体层和第一电极层之间，并且包括与第一电极层接触的第一部分。 第一部分的杂质浓度不小于1×1019立方厘米，不大于1×1021立方厘米。 发光层设置在第一半导体层和第二半导体层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US09318661B2

公开(公告)日：2016-04-19

申请号：US13038154

申请日：2011-03-01

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部分穿透金属部分并且具有开口部分形状的当量圆直径。 发光层位于第一半导体层和第一电极层之间。 第二导电类型的第二半导体层位于发光层和第一电极层之间。 第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。 第二电极层连接到第一半导体层。

公开(公告)号：US08692283B2

公开(公告)日：2014-04-08

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Tsutomu Nakanishi ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Koji Asakawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/40

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

公开(公告)号：US08680561B2

公开(公告)日：2014-03-25

申请号：US13037914

申请日：2011-03-01

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。 发光层位于第一半导体层和第二半导体层之间。 第一电极层位于与第一半导体层相对的第二半导体层的一侧。 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。 金属部分接触第二半导体层。 沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

公开(公告)号：US20120070958A1

公开(公告)日：2012-03-22

申请号：US13238715

申请日：2011-09-21

申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

IPC分类号： H01L21/762

CPC分类号： H01L21/185 ,  H01L21/76251 ,  H01L33/0079

摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.

摘要翻译： 在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。 然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。 因此，第一基板和第二基板结合在一起。 第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。 第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

公开(公告)号：US20090014734A1

公开(公告)日：2009-01-15

申请号：US12171638

申请日：2008-07-11

申请人： Yukie Nishikawa ,  Shinji Nunotani

发明人： Yukie Nishikawa ,  Shinji Nunotani

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/14

摘要： A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer.

摘要翻译： 半导体发光器件包括有源层，在有源层上形成的电极，形成在有源层和电极之间的电流扩展层，具有n型导电性，具有比有源层更大的带隙能量，并且扩散电子 从有源层的平面中的电极注入，形成在电流扩散层上的表面处理层具有比有源层更大的带隙能量，并且具有大量凹凸结构的不均匀表面区域。 电极不形成在不平坦的表面区域上。 来自表面处理层的费米能级的导带边缘能量高于当前扩散层的能带边缘能量。