公开(公告)号：US10516053B2

公开(公告)日：2019-12-24

申请号：US15370392

申请日：2016-12-06

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/3225 ,  G09G3/00 ,  H01L29/49 ,  H01L27/32

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.

公开(公告)号：US10235930B2

公开(公告)日：2019-03-19

申请号：US15371500

申请日：2016-12-07

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G3/3225 ,  G09G5/10 ,  G09G5/00 ,  H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

公开(公告)号：US10141185B2

公开(公告)日：2018-11-27

申请号：US15401157

申请日：2017-01-09

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G5/00 ,  H01L21/02 ,  H01L29/24 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/861 ,  H01L27/32

摘要： An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO)(ZO)mi(BO)(ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

公开(公告)号：US09418842B2

公开(公告)日：2016-08-16

申请号：US14361150

申请日：2012-11-28

申请人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone ,  Shinji Matsumoto ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone ,  Shinji Matsumoto ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/221 ,  H01L29/66

CPC分类号： H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/221 ,  H01L29/66969 ,  H01L29/7869

摘要： A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.

摘要翻译： 用于形成金属氧化物薄膜的涂布液包括：无机铟化合物; 无机钙化合物或无机锶化合物，或其二者; 和有机溶剂。

公开(公告)号：US20150158300A1

公开(公告)日：2015-06-11

申请号：US14412827

申请日：2013-07-19

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： B41J2/16 ,  B23P15/16

CPC分类号： B41J2/162 ,  B23P15/16 ,  B41J2/1433 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/11 ,  Y10T29/49401

摘要： A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2≧R3=R4≈0.

摘要翻译： 公开了一种喷嘴板，其具有沿厚度方向穿过喷嘴板的喷嘴孔。 喷嘴板包括形成在喷嘴孔处的排出口，排出口的开口形状的四个角部的曲率表示为R1，R2，R3，R4，排出口的开口形状为 被配置为近似等式R1 =R2≥R3=R4≈0。

公开(公告)号：US08956969B2

公开(公告)日：2015-02-17

申请号：US13372874

申请日：2012-02-14

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Kazuhiro Murata ,  Kazuyuki Masuda

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Kazuhiro Murata ,  Kazuyuki Masuda

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H05K3/46

CPC分类号： H01L21/76802 ,  H05K3/4644 ,  H05K2203/308

摘要： A hole formation method including applying a pillar-forming liquid to a base material, to thereby form a pillar; applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film; removing the pillar to form an opening in the insulating film; and heat treating the insulating film in which the opening has been formed.

摘要翻译： 一种孔形成方法，包括将柱状液体施加到基材上，从而形成支柱; 在形成有柱的基材上涂覆绝缘膜形成材料，从而形成绝缘膜; 移除所述柱以在所述绝缘膜中形成开口; 对形成有开口部的绝缘膜进行热处理。

公开(公告)号：US20150001531A1

公开(公告)日：2015-01-01

申请号：US14312950

申请日：2014-06-24

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome ,  Sadanori Arae ,  Yukiko Abe

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/24

摘要： A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

摘要翻译： 场效应晶体管，其包含：施加栅极电压的栅电极; 源电极和漏电极，其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层，其设置在所述栅电极和所述有源层之间，其中所述n型氧化物半导体是三斜晶体化合物，单斜晶体化合物或三元晶体化合物，其中每一个被替代地掺杂有至少一种掺杂剂 选自二价阳离子，三价阳离子，四价阳离子，五价阳离子和六价阳离子，并且其中所述掺杂剂的化合价大于构成所述n型氧化物半导体的金属离子的化合价 ，不包括掺杂剂。

公开(公告)号：US20130240881A1

公开(公告)日：2013-09-19

申请号：US13989975

申请日：2011-11-22

申请人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone

发明人： Yuki Nakamura ,  Naoyuki Ueda ,  Yukiko Abe ,  Yuji Sone

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66969

摘要： A coating liquid for forming a metal oxide thin film, the coating liquid including: an inorganic indium compound; at least one of an inorganic magnesium compound and an inorganic zinc compound; and a glycol ether.

摘要翻译： 一种用于形成金属氧化物薄膜的涂布液，所述涂布液包括：无机铟化合物; 无机镁化合物和无机锌化合物中的至少一种; 和乙二醇醚。

公开(公告)号：US10790308B2

公开(公告)日：2020-09-29

申请号：US16131593

申请日：2018-09-14

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/786 ,  H05B33/14 ,  H05B33/02 ,  G09F9/30 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/15

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below: condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B.

公开(公告)号：US10600916B2

公开(公告)日：2020-03-24

申请号：US15370392

申请日：2016-12-06

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/3225 ,  G09G3/00 ,  H01L29/49 ,  H01L27/32

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.