公开(公告)号：US08536494B2

公开(公告)日：2013-09-17

申请号：US11001219

申请日：2004-11-30

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: H05B3/68 ,  C23C16/00

CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01L21/67103 ,  H01L21/67248

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

公开(公告)号：US07080941B1

公开(公告)日：2006-07-25

申请号：US10294239

申请日：2002-11-13

Applicant: Neil Benjamin ,  Charles Ross ,  Rory Babb

Inventor： Neil Benjamin ,  Charles Ross ,  Rory Babb

IPC: G01K7/00 ,  G01K1/08 ,  G01K13/00

CPC classification number: G01K1/08

Abstract: A temperature sensing system incorporates a contact temperature sensor probe for measuring the temperature of articles. The probe is able to operate effectively even in high radio frequency environments such as those present within radio frequency excited plasma processing chambers. The temperature sensing system includes a contact temperature sensor, such as a thermocouple, surrounded by a shielding sheath of a material such as aluminum which is clad with one or more layers of a cladding material. A tip insulator is provided surrounding the sheath for providing RF insulation and thermal coupling. An RF insulating and thermal insulating mounting member is connected to the tip insulator for mounting the probe on an article to be measured.

Abstract translation: 温度感测系统包含用于测量物品温度的接触式温度传感器探头。 即使在射频激发等离子体处理室中存在的高频无线电频率环境中，探头也能够有效地工作。 温度感测系统包括接触温度传感器，例如热电偶，由诸如铝的材料的屏蔽护套包围，该覆盖层包覆有一层或多层包层材料。 提供围绕护套的尖端绝缘体，用于提供RF绝缘和热耦合。 RF绝缘和绝热安装构件连接到尖端绝缘体，用于将探针安装在待测物品上。

公开(公告)号：US20050173404A1

公开(公告)日：2005-08-11

申请号：US11001219

申请日：2004-11-30

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: C23F4/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/683 ,  H05B3/68

CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01L21/67103 ,  H01L21/67248

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

公开(公告)号：US20050173403A1

公开(公告)日：2005-08-11

申请号：US11001218

申请日：2004-11-30

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: C23F4/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/683 ,  H05B3/68

CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01L21/67103 ,  H01L21/67248

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat-support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平坦支撑件保持工件并设置在绝热体上。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

公开(公告)号：US06592710B1

公开(公告)日：2003-07-15

申请号：US09834523

申请日：2001-04-12

Applicant: Neil Benjamin ,  Andras Kuthi

Inventor： Neil Benjamin ,  Andras Kuthi

IPC: H01L213065

CPC classification number: H01J37/321 ,  H01J37/32697 ,  H01J37/32935 ,  H01J37/3299

Abstract: An apparatus for controlling the voltage applied to a shield interposed between an induction coil powered by a power supply via a matching network, and the plasma it generates, comprises a shield, a first feedback circuit, and a second feedback circuit. The power supply powers the shield. The first feedback circuit is connected to the induction coil for controlling the power supply. The second feedback circuit is connected to the shield for controlling the voltage of the shield. Both first and second feedback circuits operate at different frequency ranges. The first feedback circuit further comprises a first controller and a first sensor. The first sensor sends a first signal representing the power supplied to the inductive coil to the first controller. The first controller adjusts the power supply such that the power supplied to the inductor coil is controlled by a first set point. The second feedback circuit further comprises a second sensor, a second controller, and a variable impedance network. The shield is powered via a variable impedance network. The second sensor sends a second signal representative of the voltage of the shield to the second controller. The second controller adjusts the variable impedance network such that the voltage of the shield is controlled by a second set point.

Abstract translation: 用于控制施加到由经由匹配网络供电的感应线圈之间的屏蔽的电压及其产生的等离子体的装置包括屏蔽，第一反馈电路和第二反馈电路。 电源为屏蔽提供电源。 第一反馈电路连接到用于控制电源的感应线圈。 第二反馈电路连接到屏蔽以控制屏蔽电压。 第一和第二反馈电路都以不同的频率范围工作。 第一反馈电路还包括第一控制器和第一传感器。 第一传感器将表示提供给感应线圈的功率的第一信号发送到第一控制器。 第一控制器调节电源，使得提供给电感线圈的功率由第一设定点控制。 第二反馈电路还包括第二传感器，第二控制器和可变阻抗网络。 屏蔽通过可变阻抗网络供电。 第二传感器将表示屏蔽电压的第二信号发送到第二控制器。 第二控制器调整可变阻抗网络，使得屏蔽的电压由第二设定点控制。

公开(公告)号：US6087778A

公开(公告)日：2000-07-11

申请号：US981252

申请日：1998-05-11

Applicant: Neil Benjamin ,  Stefano Mangano ,  Russell Jewett

Inventor： Neil Benjamin ,  Stefano Mangano ,  Russell Jewett

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3211 ,  H01J37/321

Abstract: A plasma processing device (25) including a vacuum chamber (27) for processing a substrate (29) and a source chamber (26) for generating a plasma is disclosed where the source chamber (26) has a non-cylindrical geometry. Helicon waves of plasma are propagated from the source chamber into the vacuum chamber by a magnetic field having substantially parallel magnetic field lines extending from the source chamber into the vacuum chamber. A RF antenna (31 and 32) of a novel serpentine configuration is used to couple electromagnetic energy into the source chamber to create helicon plasma waves in the source chamber (26). The non-cylindrical geometry of the source chamber allows the processing of large area substrates due to the ability to scale the source chamber to the desired application while maintaining throughput efficiency and the ability to propagate helicon waves along the magnetic field lines present in the source chamber. In one embodiment a linear source chamber having the shape of an elongated rectangular box is disclosed wherein a slot opening (28) connects the source chamber to the vacuum chamber. Due to the ability of the helicon waves from a linear source chamber to propagate in a vacuum chamber without interference from a helicon wave from a similar source chamber, a plasma processing device is disclosed wherein multiple extended non-cylindrical source chambers are arranged to propagate nonparallel helicon plasma waves in a vacuum chamber.

Abstract translation: PCT No.PCT / US96 / 11157 Sec。 371日期：1998年5月11日 102（e）1998年5月11日PCT PCT 1996年6月28日PCT公布。 出版物WO97 / 01655 日本1997年1月16日公开了一种等离子体处理装置（25），其包括用于处理基板（29）的真空室（27）和用于产生等离子体的源室（26），其中源室（26） 圆柱几何。 等离子体的螺旋波通过具有从源室延伸到真空室中的基本平行的磁场线的磁场从源室传播到真空室中。 使用新型蛇形结构的RF天线（31和32）将电磁能耦合到源室中，以在源室（26）中产生螺旋形等离子体波。 源室的非圆柱形几何形状允许处理大面积基板，这是由于能够将源室缩放到期望的应用，同时保持生产效率和沿存在于源室中的磁场线传播螺旋形波的能力 。 在一个实施例中，公开了具有细长矩形盒的形状的线性源室，其中槽开口（28）将源室连接到真空室。 由于来自线性源室的Helicon波在真空室中传播而不受来自类似源室的螺旋波的干扰的能力，公开了一种等离子体处理装置，其中多个扩展的非圆柱形源室布置成传播非平行 螺旋等离子体波在真空室中。

公开(公告)号：US5589737A

公开(公告)日：1996-12-31

申请号：US354122

申请日：1994-12-06

Applicant: Michael Barnes ,  Neil Benjamin ,  John Holland ,  Richard Beer ,  Robert Veltrop

Inventor： Michael Barnes ,  Neil Benjamin ,  John Holland ,  Richard Beer ,  Robert Veltrop

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01J7/24

CPC classification number: H01J37/3222 ,  H01J37/321 ,  H01J37/32238

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

Abstract translation: 用于大型工件的等离子体处理器包括具有多个单独支撑的电介质窗口的真空室，用于连接r.f。 来自腔室外部的腔室进入腔室以激发等离子体。 用于感应地导出场的平面线圈具有多个具有相同电长度的段，每个段具有与另一段的元件并联连接的元件。

公开(公告)号：US20100041238A1

公开(公告)日：2010-02-18

申请号：US12605027

申请日：2009-10-23

Applicant: David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

Inventor： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC: H01L21/465

CPC classification number: C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

Abstract translation: 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底的等离子体处理。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，固定到 或可移除地安装在电介质窗口的开口中，气体注射器包括多个气体出口，其以可调节的流速向腔室的多个区域供应处理气体，以及RF能量源，例如平面或非平面螺旋线圈，其中 将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

公开(公告)号：US20090215201A1

公开(公告)日：2009-08-27

申请号：US12436443

申请日：2009-05-06

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: H01L21/465 ,  H01L21/66

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。 加热器和平坦支架的组合温度变化率每秒至少1℃。

公开(公告)号：US20090081811A1

公开(公告)日：2009-03-26

申请号：US12145389

申请日：2008-06-24

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H01L21/00 ,  H02J1/10

CPC classification number: H01J37/32045 ,  H01J37/32174 ,  Y10T307/258

Abstract: A distributed power arrangement to provide local power delivery in a plasma processing system during substrate processing is provided. The distributed power arrangement includes a set of direct current (DC) power supply units. The distributed power arrangement also includes a plurality of power generators, which is configured to receive power from the set of DC power supply units. Each power generator of the plurality of power generators is coupled to a set of electrical elements, thereby enabling the each power generator of the plurality of power generators to control the local power delivery.

Abstract translation: 提供了一种用于在衬底处理期间在等离子体处理系统中提供局部电力输送的分布式电力装置。 分布式电源装置包括一组直流（DC）电源单元。 分布式电力布置还包括多个发电机，其被配置为从所述一组直流电源单元接收电力。 多个发电机的每个发电机耦合到一组电气元件，从而使多个发电机中的每个发电机能够控制局部电力输送。