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    Semiconductor wafer and a method for manufacturing a semiconductor wafer
    21.
    发明授权
    Semiconductor wafer and a method for manufacturing a semiconductor wafer 失效
    半导体晶片及其制造方法

    公开(公告)号：US07015566B2

    公开(公告)日：2006-03-21

    申请号：US10687705

    申请日：2003-10-20

    申请人： Masao Iwase ,  Soichi Nadahara

    发明人： Masao Iwase ,  Soichi Nadahara

    IPC分类号： H01L29/06

    CPC分类号： H01L23/544 ,  H01L29/0657 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor wafer includes (a) a first principal side and a second principal side opposite to each other, (b) a first bevel contour and a second bevel contour provided at an outer periphery of the first principal side and the second principal side, (c) a first recess formed in the first bevel contour, and (d) a first type of ID mark configured by a protruding dot provided on a bottom face of the first recess.

    摘要翻译： 半导体晶片包括（a）彼此相对的第一主侧和第二主面，（b）设置在第一主面和第二主面的外周的第一斜面轮廓和第二斜面轮廓（ c）形成在所述第一斜面轮廓中的第一凹部，以及（d）由设置在所述第一凹部的底面上的突出点构成的第一类型的ID标记。

    Wafer cleaning system with progressive megasonic wave
    22.
    发明授权
    Wafer cleaning system with progressive megasonic wave 失效
    具有渐进式超声波的晶圆清洗系统

    公开(公告)号：US6021789A

    公开(公告)日：2000-02-08

    申请号：US189429

    申请日：1998-11-10

    申请人： Hiroyuki Akatsu ,  Soichi Nadahara

    发明人： Hiroyuki Akatsu ,  Soichi Nadahara

    IPC分类号： B08B3/12 ,  H01L21/00 ,  H01L21/304 ,  B08B3/10

    CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

    摘要： Improved megasonic cleaning is obtained by use of an apparatus containing a plurality of transducers arranged to transmit a progressive megasonic wave through a liquid containing a planar surface of an object. The progression of the wave is preferably such that particles are carried by the wave toward the toward the edge of the wafer. The processes and apparatus are especially useful for cleaning wafers in the course of manufacturing integrated circuit chips.

    摘要翻译： 通过使用包含多个换能器的装置来获得改进的兆声波清洗，所述多个换能器布置成通过包含物体的平面的液体传输渐进式超声波。 波的进行优选地使得颗粒被波浪朝着晶片的边缘承载。 该方法和设备在制造集成电路芯片的过程中对于清洁晶片特别有用。

    Material supply system in semiconductor device manufacturing plant
    23.
    发明授权
    Material supply system in semiconductor device manufacturing plant 失效
    半导体器件制造厂的材料供应系统

    公开(公告)号：US07305275B2

    公开(公告)日：2007-12-04

    申请号：US10507699

    申请日：2003-03-27

    申请人： Kunihiro Miyazaki ,  Soichi Nadahara ,  Kinya Usuda ,  Masaji Akahori ,  Sota Nakagawa ,  Ken Nakajima

    发明人： Kunihiro Miyazaki ,  Soichi Nadahara ,  Kinya Usuda ,  Masaji Akahori ,  Sota Nakagawa ,  Ken Nakajima

    IPC分类号： G06F19/00

    CPC分类号： H01L21/67276 ,  B24B37/04 ,  B24B57/02 ,  C11D11/0047 ,  C23C16/52 ,  G05B2219/32082 ,  H01L21/02052 ,  Y02P90/20 ,  Y10S210/90

    摘要： In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.

    摘要翻译： 在用于灵活制造的小规模工厂中，以低成本提供纯净水供应系统，而不降低生产效率。 纯水系统产生多个等级的纯水，其通过连接到用于清洁，CMP，光刻等的使用点的管道供应。 一旦控制器收到来自每个使用点的请求信号以开始使用一定等级的纯水，则控制器确定所需量是否超过纯水系统能提供的纯水等级的容量。 如果不是，控制器将使用许可信号发送到使用点，以允许其使用纯净水。 当某个使用点正在使用所要求的纯水量时，控制器可能不允许请求使用点使用纯净水，直到从使用纯水的使用点发出使用结束信号。

    Fabrication of trench capacitors using disposable hard mask
    25.
    发明授权
    Fabrication of trench capacitors using disposable hard mask 失效
    使用一次性硬掩模制作沟槽电容器

    公开(公告)号：US06190955B1

    公开(公告)日：2001-02-20

    申请号：US09014433

    申请日：1998-01-27

    申请人： Matthias Ilg ,  Richard L. Kleinhenz ,  Soichi Nadahara ,  Ronald W. Nunes ,  Klaus Penner ,  Klaus Roithner ,  Radhika Srinivasan ,  Shigeki Sugimoto

    发明人： Matthias Ilg ,  Richard L. Kleinhenz ,  Soichi Nadahara ,  Ronald W. Nunes ,  Klaus Penner ,  Klaus Roithner ,  Radhika Srinivasan ,  Shigeki Sugimoto

    IPC分类号： H01L218244

    CPC分类号： H01L21/3081

    摘要： Improved trench forming methods for semiconductor substrates using BSG avoid the problems associated with conventional TEOS hard mask techniques. The methods comprise: (a) providing a semiconductor substrate, (b) applying a conformal layer of borosilicate glass (BSG) on the substrate; (c) forming a patterned photoresist layer over the BSG layer whereby a portion of a layer underlying the photoresist layer is exposed, (d) anisotropically etching through the exposed portion of the underlying layer, through any other layers lying between the photoresist layer and the semiconductor substrate, and into the semiconductor substrate, thereby forming a trench in the semiconductor substrate. Preferably, one or more dielectric layers are present on the substrate surface prior to application of the BSG layer. One or more chemical barrier and/or organic antireflective coating layers may be applied over the BSG layer between the BSG layer and the photoresist layer. The methods are especially useful for forming deep trenches in silicon substrates with pad dielectric layers.

    摘要翻译： 使用BSG的半导体衬底的改进的沟槽形成方法避免了与常规TEOS硬掩模技术相关的问题。 所述方法包括：（a）提供半导体衬底，（b）在衬底上施加保形层硼硅酸盐玻璃（BSG）;（c）在BSG层上形成图案化的光刻胶层，由此在光刻胶下面的一部分层 （d）通过位于光致抗蚀剂层和半导体衬底之间的任何其它层，通过底层的暴露部分进行各向异性蚀刻，并进入半导体衬底，由此在半导体衬底中形成沟槽。优选地，一个 或更多的介电层在施加BSG层之前存在于衬底表面上。 可以在BSG层和光致抗蚀剂层之间的BSG层上施加一个或多个化学屏障和/或有机抗反射涂层。 该方法对于在具有焊盘电介质层的硅衬底中形成深沟槽特别有用。

    Method of manufacturing a semiconductor device
    26.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5360748A

    公开(公告)日：1994-11-01

    申请号：US007876

    申请日：1993-01-22

    申请人： Soichi Nadahara ,  Kikuo Yamabe

    发明人： Soichi Nadahara ,  Kikuo Yamabe

    IPC分类号： H01L21/322 ,  H01L21/306

    CPC分类号： H01L21/3221 ,  Y10S148/06

    摘要： A method of manufacturing a semiconductor device, which comprises the steps of providing a semiconductor substrate having a first primary surface which is designated to form the semiconductor device and a second primary surface opposite from the first primary surface, the substrate containing contaminants therein; forming a boron-doped layer on the second primary surface of the substrate; and absorbing the contaminants into the boron-doped layer.

    摘要翻译： 一种制造半导体器件的方法，包括以下步骤：提供半导体衬底，所述半导体衬底具有指定为形成所述半导体器件的第一主表面和与所述第一主表面相对的第二主表面，所述衬底中含有污染物; 在所述衬底的所述第二主表面上形成硼掺杂层; 并将污染物吸收到硼掺杂层中。

    Substrate treatment apparatus and substrate treatment method
    27.
    发明授权
    Substrate treatment apparatus and substrate treatment method 有权
    基板处理装置及基板处理方法

    公开(公告)号：US07913346B2

    公开(公告)日：2011-03-29

    申请号：US11396820

    申请日：2006-03-28

    申请人： Masaki Iwami ,  Soichi Nadahara

    发明人： Masaki Iwami ,  Soichi Nadahara

    IPC分类号： B08B11/02

    CPC分类号： H01L21/67046

    摘要： A substrate treatment apparatus includes a substrate holding mechanism which holds a substrate, a scrub brush for scrubbing a surface of the substrate held by the substrate holding mechanism to remove foreign matter from the substrate surface, a treatment liquid supplying mechanism which supplies an alkaline treatment liquid to the substrate surface when the substrate is scrubbed with the scrub brush, and an alkaline fluid supplying mechanism which supplies an alkaline fluid to a surface of the scrub brush in a standby period during which no substrate is scrubbed with the scrub brush.

    摘要翻译： 一种基板处理装置，包括：保持基板的基板保持机构，用于清洗由基板保持机构保持的基板的表面以从基板表面除去异物的擦洗刷，提供碱性处理液的处理液供给机构 当用洗刷刷洗涤衬底时，将衬底表面施加到衬底表面;以及碱性流体供应机构，其在待刷毛刷不用衬底被擦洗的待机期间内将碱性流体供应到擦洗刷的表面。

    Material supply system in semiconductor device manufacturing plant
    30.
    发明申请
    Material supply system in semiconductor device manufacturing plant 失效
    半导体器件制造厂的材料供应系统

    公开(公告)号：US20050177273A1

    公开(公告)日：2005-08-11

    申请号：US10507699

    申请日：2003-03-27

    申请人： Kunihiro Miyazaki ,  Soichi Nadahara ,  Kinya Usuda ,  Masaji Akahori ,  Sota Nakagawa ,  Ken Nakajima

    发明人： Kunihiro Miyazaki ,  Soichi Nadahara ,  Kinya Usuda ,  Masaji Akahori ,  Sota Nakagawa ,  Ken Nakajima

    IPC分类号： H01L21/02 ,  B24B57/02 ,  C11D11/00 ,  C23C16/52 ,  H01L21/00 ,  H01L21/306 ,  G06F19/00

    CPC分类号： H01L21/67276 ,  B24B37/04 ,  B24B57/02 ,  C11D11/0047 ,  C23C16/52 ,  G05B2219/32082 ,  H01L21/02052 ,  Y02P90/20 ,  Y10S210/90

    摘要： In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.

    摘要翻译： 在用于灵活制造的小规模工厂中，以低成本提供纯净水供应系统，而不降低生产效率。 纯水系统产生多个等级的纯水，其通过连接到用于清洁，CMP，光刻等的使用点的管道供应。 一旦控制器收到来自每个使用点的请求信号以开始使用一定等级的纯水，则控制器确定所需量是否超过纯水系统能提供的纯水等级的容量。 如果没有，控制器将使用许可信号发送到使用点，以允许其使用纯净水。 当某个使用点正在使用所要求的纯水量时，控制器可能不允许请求使用点使用纯净水，直到从使用纯水的使用点发出使用结束信号。