Abstract:
An AD conversion circuit includes a comparison circuit, a first DA conversion circuit including a plurality of resistance elements, and a first voltage output circuit. A comparator of the comparison circuit outputs a signal that represents a result of comparing a first voltage of a first input terminal with a second voltage of a second input terminal, A first combined resistance value of the first DA conversion circuit and the first voltage output circuit seen from a second terminal of the first capacitance element is a first value when the first capacitance element holds a first signal. The first combined resistance value is a second value when the comparator compares the first voltage with the second voltage. The first value is less than the second value.
Abstract:
An analog-to digital (AD) conversion circuit includes a digital-to-analog (DA) conversion circuit, an arithmetic circuit, and a comparison circuit. The DA conversion circuit generates a first reference current signal. The arithmetic circuit is electrically connected to the DA conversion circuit and generates a comparison current signal by adding the first reference current signal to a first current signal generated in accordance with a first voltage signal or subtracting the first reference current signal from the first current signal. The comparison circuit is electrically connected to the arithmetic circuit and outputs digital data based on a result of comparing a second current signal according to a second voltage signal with the comparison current signal.
Abstract:
An imaging device includes a plurality of pixels, a reference current generation circuit, a differential current generation circuit, a reference voltage generation circuit, a conversion circuit, and an output circuit. The differential current generation circuit generates a differential current according to a difference between a pixel current and a reference current. The conversion circuit converts the differential current into an output voltage on the basis of a first reference voltage. A second reference voltage is higher than the tint reference voltage when the output voltage at the time of resetting of the pixels is higher than the output voltage at the time of exposure of the pixels. The second reference voltage is lower than the first reference voltage when the output voltage at the time of resetting of the pixels is lower than the output voltage at the time of exposure of the pixels.
Abstract:
A first voltage line supplies a constant first voltage in column circuits of an imaging device. A second voltage line supplies a second voltage that is lower than the first voltage and is constant. A third voltage line supplies a constant third voltage. A fourth voltage line supplies a fourth voltage that is lower than the third voltage and is constant. The first voltage line is electrically connected to a drain of an NMOS transistor, and the third voltage line is electrically connected to a gate of the NMOS transistor. The second voltage line is electrically connected to a drain of a PMOS transistor, and the fourth voltage line is electrically connected to a gate of the PMOS transistor.
Abstract:
A solid-state imaging apparatus includes a plurality of photoelectric conversion sections configured to generate a signal charge according to an amount of an incident light and disposed in a matrix, a first accumulation section configured to accumulate the signal charge, a first transfer section configured to transfer the signal charge from the photoelectric conversion sections to the first accumulation section, a second accumulation section configured to accumulate the signal charge accumulated in the first accumulation section, a second transfer section configured to transfer the signal charge accumulated in the first accumulation section to the second accumulation section, a reset section configured to reset the signal charge accumulated in the second accumulation section, an output section configured to output a signal according to the signal charge accumulated in the second accumulation section, and first and second control sections configured to control each section for every row or column.
Abstract:
An imaging device includes: an imaging section in which a plurality of unit pixels having a photoelectric conversion element are arranged in the form of a matrix; a reference signal generating section configured to generate a reference signal that increases or decreases with a passage of time; a comparison section that includes a differential amplifier including a first input terminal electrically connected to the reference signal generating section and a second input terminal electrically connected to the unit pixels and configured to compare voltages of the first input terminal and the second input terminal and is arranged for each column or for a plurality of columns of a pixel array of the imaging section; and a measurement section configured to measure a comparison time from when the comparison section starts comparison until the comparison ends and generate data corresponding to the comparison time.
Abstract:
An imaging apparatus capable of reducing deterioration of AD conversion accuracy is provided, wherein, when performing the AD conversion on a pixel signal corresponding to a reset level, a latch control unit causes a latch circuit of a latch unit to enter an enabled state (third timing) at a first timing according to a comparison start in a comparing unit, and then causes the latch circuit of the latch unit to execute latching at a fourth timing at which a predetermined time has lapsed from a second timing according to a comparison end in the comparing unit. Further, when performing the AD conversion on the pixel signal corresponding to the signal level, the latch control unit causes the latch circuit of the latch unit to enter the enabled state at the second timing according to the comparison end in the comparing unit.
Abstract:
An imaging device and an endoscopic device can be further miniaturized. A vertical selection unit simultaneously resets charge accumulation units of a plurality of pixels, and then a horizontal selection unit sequentially selects a plurality of first pixel signals corresponding to voltages of the charge accumulation units of the plurality of pixels and inputs the first pixel signals to an output unit. Further, a vertical selection unit simultaneously transfers the signal charges generated by the charge generation units in the plurality of pixels to the charge accumulation units, and then a horizontal selection unit sequentially selects a plurality of second pixel signals corresponding to the voltages of the charge accumulation units of the plurality of pixels and inputs the second pixel signals to the output unit.
Abstract:
An AD conversion circuit may include: a reference signal generation unit generating a reference signal increasing or decreasing with passage of time; a comparison unit including a first comparison circuit and a second comparison circuit comparing an analog signal to be subjected to an AD conversion with the reference signal; a clock generation unit including a delay circuit in which a plurality of delay units are connected to one another, and outputting a first lower phase signal and a second lower phase signal based on clock signals output from each of the plurality of delay units; a latch unit including a first latch circuit latching a logical state of the first lower phase signal and a second latch circuit latching a logical state of the second lower phase signal; and a counting unit performing counting based on the second lower phase signal output from the clock generation unit.
Abstract:
An AD conversion circuit may include: a reference signal generation unit; a comparison unit; a clock generation unit; a latch unit; a counting unit; and an encoding unit including a detection circuit and an encoding circuit, the detection circuit performing a first detection operation of detecting logic states of n lower phase signals in a signal group that a plurality of lower phase signals latched in the latch unit are arranged in the same order as those of the signal group when the plurality of lower phase signals output from the clock generation unit are arranged to be the signal group the detection circuit outputting a state detection signal when the logic state of the n lower phase signals is detected to be a predetermined logic state in the first detection operation, the encoding circuit performing encoding based on the state detection signal output from the detection circuit.