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    SELF-ALIGNED OPTICAL GRID ON IMAGE SENSOR
    21.
    发明申请
    SELF-ALIGNED OPTICAL GRID ON IMAGE SENSOR 审中-公开

    公开(公告)号：US20180090538A1

    公开(公告)日：2018-03-29

    申请号：US15276000

    申请日：2016-09-26

    Applicant: OmniVision Technologies, Inc.

    Inventor： Xin Wang ,  Dajiang Yang ,  Qin Wang ,  Duli Mao ,  Dyson Hsin-Chih Tai

    IPC: H01L27/146

    CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14629

    Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

    FLOATING DIFFUSION REGION FORMED VIA SHARED PHOTOMASK AND METHODS THEREOF
    22.
    发明公开
    FLOATING DIFFUSION REGION FORMED VIA SHARED PHOTOMASK AND METHODS THEREOF 审中-公开

    公开(公告)号：US20240194719A1

    公开(公告)日：2024-06-13

    申请号：US18079201

    申请日：2022-12-12

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qin Wang ,  Yu Jin

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14689

    Abstract: An image sensor including a plurality of photodiodes disposed within a semiconductor substrate proximate to a first side of the semiconductor substrate, a first transfer gate and a second transfer gate that are each disposed proximate to the first side of the semiconductor substrate and coupled to a respective one of the plurality of photodiodes, and a floating diffusion region coupled to the first transfer gate and the second transfer gate is described. The first transfer gate is laterally separated from the second transfer gate by a separation distance. The floating diffusion region extends laterally within the semiconductor substrate a distance greater than the separation distance between the first transfer gate and the second transfer gate. The floating diffusion region includes a central portion surrounded by a peripheral portion. A first dopant concentration of the central portion is greater than a second dopant concentration of the peripheral portion.

    VERTICAL TRANSFER STRUCTURES
    24.
    发明公开
    VERTICAL TRANSFER STRUCTURES 审中-公开

    公开(公告)号：US20230215900A1

    公开(公告)日：2023-07-06

    申请号：US17568909

    申请日：2022-01-05

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qin Wang ,  Hui Zang

    IPC: H01L27/146

    CPC classification number: H01L27/14638 ,  H01L27/1463

    Abstract: Pixels, such as for image sensors and electronic devices, include a photodiode formed in a semiconductor substrate, a floating diffusion, and a transfer structure selectively coupling the photodiode to the floating diffusion. The transfer structure includes a transfer gate formed on the semiconductor substrate, and a vertical channel structure including spaced apart first doped regions formed in the semiconductor substrate between the transfer gate and the photodiode. Each spaced apart first doped region is doped at a first dopant concentration with a first-type dopant. The spaced apart first doped regions are formed in a second doped region doped at a second dopant concentration with a second-type dopant of a different conductive type.

    IMAGE SENSOR WITH THROUGH SILICON FIN TRANSFER GATE
    25.
    发明申请
    IMAGE SENSOR WITH THROUGH SILICON FIN TRANSFER GATE 有权

    公开(公告)号：US20220059600A1

    公开(公告)日：2022-02-24

    申请号：US16998815

    申请日：2020-08-20

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qin Wang ,  Gang Chen

    IPC: H01L27/146

    Abstract: A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region. The photodiode is disposed in a semiconductor material. The photodiode is coupled to generate charges in response to incident light. The photodiode has a substantially uniform doping profile throughout a depth of the photodiode in the semiconductor material. The floating diffusion region is disposed in the semiconductor material. The transfer gate is disposed between the photodiode and the floating diffusion region, wherein the transfer gate includes a plurality of fin structures. The channel region associated with the transfer gate is in the semiconductor material proximate to the transfer gate. The transfer gate is coupled to transfer the charge from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate.

    PIXEL ARRAY WITH ISOLATED PIXELS
    27.
    发明申请
    PIXEL ARRAY WITH ISOLATED PIXELS 有权

    公开(公告)号：US20210057466A1

    公开(公告)日：2021-02-25

    申请号：US16548697

    申请日：2019-08-22

    Applicant: OmniVision Technologies, Inc.

    Inventor： Qin Wang ,  Gang Chen

    IPC: H01L27/146

    Abstract: A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes. Each of the plurality of isolation layer segments extends through the semiconductor substrate in a first direction. Each of the plurality of isolation layer segments encloses a portion of the semiconductor substrate in a plane perpendicular to the first direction. The plurality of isolation layer segments form a grid that defines a plurality of isolated sections of the semiconductor substrate. The plurality of isolated sections of the semiconductor substrate include the portions of the semiconductor substrate. Each of the photodiodes is formed in a respective one of the plurality of isolated sections of the semiconductor substrate.

    Image sensor with two-dimensional split dual photodiode pairs
    29.
    发明授权
    Image sensor with two-dimensional split dual photodiode pairs 有权

    公开(公告)号：US10116889B2

    公开(公告)日：2018-10-30

    申请号：US15443783

    申请日：2017-02-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Qin Wang ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Alexander Grant

    IPC: H04N5/335 ,  H04N5/369 ,  H04N5/378 ,  H04N9/04 ,  H04N5/374 ,  H04N5/232

    Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.

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