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公开(公告)号：US20180193948A1
公开(公告)日：2018-07-12
申请号：US15738134
申请日：2016-06-07
Applicant: Orbotech Ltd.
Inventor： Michael Zenou , Zvi Kotler
IPC: B23K26/064 , B23K26/067 , B23K26/57 , B23K26/06 , B23K26/342
Abstract: An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, and a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the second surface so as to induce ejection of droplets of molten material from the donor film at an angle that is not normal to the second surface at the location onto the acceptor surface.
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公开(公告)号：US20170250294A1
公开(公告)日：2017-08-31
申请号：US15509491
申请日：2015-10-19
Applicant: Orbotech Ltd.
Inventor： Michael Zenou , Zvi Kotler
IPC: H01L31/0224
CPC classification number: H01L31/022425 , B23K26/00 , B23K26/0006 , B23K26/0624 , B23K26/0861 , B23K26/1224 , B23K26/123 , B23K26/34 , B23K2101/40 , B23K2103/56 , C23C14/048 , C23C14/28 , H01L21/2855 , H01L21/4846 , H01L31/05 , H05K3/14 , H05K2203/0528 , H05K2203/107 , H05K2203/128 , Y02E10/50
Abstract: A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.
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公开(公告)号：US20170210142A1
公开(公告)日：2017-07-27
申请号：US15326498
申请日：2015-08-02
Applicant: ORBOTECH LTD.
Inventor： Zvi Kotler , Michael Zenou , Itay Peled
IPC: B41J2/455
CPC classification number: B41J2/455 , B23K26/0676 , C23C14/04 , C23C14/28 , G03F7/2014
Abstract: Printing apparatus (20) includes a donor supply assembly (30), which provides a transparent donor substrate (26) having opposing first and second surfaces and a donor film formed on the second surface so as to position the donor film in proximity a target area (28) on an acceptor substrate (22). An optical assembly (24) directs multiple output beams of laser radiation simultaneously in a predefmed spatial pattern to pass through the first surface of the donor substrate and impinge on the donor film so as to induce ejection of material from the donor film onto the acceptor substrate according, thereby writing the predefined pattern onto the target area of the acceptor substrate.
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公开(公告)号：US12204228B2
公开(公告)日：2025-01-21
申请号：US17423471
申请日：2020-02-27
Applicant: Orbotech Ltd.
Inventor： Zvi Kotler , Yuval Berg
IPC: G02F1/33 , B23K26/06 , B23K26/064 , B23K26/073 , G02B27/09
Abstract: Optical apparatus (20) includes a laser (22), which is configured to emit a beam of coherent optical radiation at a specified wavelength along a beam axis. A deflector (24) is configured to intercept and selectably deflect the beam over a range of angles relative to the beam axis. A plurality of diffractive optical elements (DOEs—32, 34, 36, 64, 66, 68) are positioned to receive the deflected beam at different, respective deflection angles within the range and to output respective diffracted beams. Beam-combining optics (42, 74) are configured to receive and deflect the diffracted beams from the DOEs so that all of the diffracted beams are directed along a common output axis toward a target (48).
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公开(公告)号：US11627667B2
公开(公告)日：2023-04-11
申请号：US17162835
申请日：2021-01-29
Applicant: Orbotech Ltd.
Inventor： Zvi Kotler , Ofer Fogel
Abstract: A method for circuit fabrication includes defining a solder bump, including a specified solder material and having a specified bump volume, to be formed at a target location on an acceptor substrate. A transparent donor substrate, having a donor film including the specified solder material, is positioned such that the donor film is in proximity to the target location on the acceptor substrate. A sequence of pulses of laser radiation is directed to pass through the first surface of the donor substrate and impinge on the donor film so as to induce ejection from the donor film onto the target location on the acceptor substrate of a number of molten droplets of the solder material such that the droplets deposited at the target location cumulatively reach the specified bump volume. The target location is heated so the deposited droplets melt and reflow to form the solder bump.
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Patent Agency Ranking
公开(公告)号：US11464114B2
公开(公告)日：2022-10-04
申请号：US17174337
申请日：2021-02-11
Applicant: Orbotech Ltd.
Inventor： Zvi Kotler , Michael Zenou
Abstract: A method of producing a conductive path on a substrate including depositing on the substrate a layer of material having a thickness in the range of 0.1 to 5 microns, including metal particles having a diameter in the range of 10 to 100 nanometers, employing a patterning laser beam to selectably sinter regions of the layer of material, thereby causing the metal particles to together define a conductor at sintered regions and employing an ablating laser beam, below a threshold at which the sintered regions would be ablated, to ablate portions of the layer of material other than at the sintered regions.
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公开(公告)号：US11409184B2
公开(公告)日：2022-08-09
申请号：US16543691
申请日：2019-08-19
Applicant: Orbotech Ltd.
Inventor： Itay Peled , Zvi Kotler , Ronald Kaminsky
Abstract: Optical apparatus includes an acousto-optic medium and an array of multiple piezoelectric transducers attached to the acousto-optic medium. A drive circuit is coupled to apply to the piezoelectric transducers respective drive signals including at least first and second frequency components at different, respective first and second frequencies and with different, respective phase offsets for the first and second frequency components at each of the multiple piezoelectric transducers.
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公开(公告)号：US20220248540A1
公开(公告)日：2022-08-04
申请号：US17162835
申请日：2021-01-29
Applicant: Orbotech Ltd.
Inventor： Zvi Kotler , Ofer Fogel
IPC: H05K3/34
Abstract: A method for circuit fabrication includes defining a solder bump, including a specified solder material and having a specified bump volume, to be formed at a target location on an acceptor substrate. A transparent donor substrate, having a donor film including the specified solder material, is positioned such that the donor film is in proximity to the target location on the acceptor substrate. A sequence of pulses of laser radiation is directed to pass through the first surface of the donor substrate and impinge on the donor film so as to induce ejection from the donor film onto the target location on the acceptor substrate of a number of molten droplets of the solder material such that the droplets deposited at the target location cumulatively reach the specified bump volume. The target location is heated so the deposited droplets melt and reflow to form the solder bump.
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公开(公告)号：US11271119B2
公开(公告)日：2022-03-08
申请号：US16194407
申请日：2018-11-19
Applicant: Orbotech Ltd.
Inventor： Michael Zenou , Zvi Kotler
IPC: H01L31/0224 , H05K3/14 , H01L21/48 , H01L21/285 , C23C14/04 , C23C14/28 , B23K26/34 , B23K26/0622 , B23K26/12 , B23K26/00 , B23K26/08 , B23K103/00 , B23K101/40 , H01L31/05
Abstract: A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness less than 2 μm. The donor substrate is positioned in proximity to an acceptor substrate (22) including a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate. A train of laser pulses, having a pulse duration less than 2 ns, is directed to impinge on the donor substrate so as to cause droplets (44) of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace (25) in ohmic contact with the semiconductor material.
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公开(公告)号：US20220024223A1
公开(公告)日：2022-01-27
申请号：US17427372
申请日：2020-05-04
Applicant: Orbotech Ltd.
Inventor： Marc Altman , Zvi Kotler , Itay Peled , Oleg Ermak , Sharona Cohen
Abstract: Printing apparatus includes a donor supply assembly, which positions a transparent donor substrate having opposing first and second surfaces and a donor film formed on the second surface so that the donor film is in proximity to a target area on an acceptor substrate. An optical assembly directs one or more beams of laser radiation to pass through the first surface of the donor substrate and impinge on the donor film so as to induce ejection of material from the donor film onto the acceptor substrate. Means are provided to mitigate or compensate for the variation in reflection of the laser radiation across an area of the donor substrate, so as to equalize a flux of the laser radiation that is absorbed in the donor film across the area of the donor substrate.
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