公开(公告)号：US20200168505A1

公开(公告)日：2020-05-28

申请号：US16078995

申请日：2017-06-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Patrick Rode

IPC: H01L21/78 ,  H01L21/28 ,  H01L23/538

Abstract: A semiconductor chip, a method for producing a semiconductor chip and an apparatus having a plurality of semiconductor chips are disclosed. In an embodiment a chip includes a substrate and a semiconductor layer arranged at the substrate, wherein the substrate includes, at a side facing the semiconductor layer, a top side with a width B1 in a first lateral direction and, at a side opposite to the top side, a bottom side with a width B3 in the first lateral direction, wherein the substrate has a width B2 in the first lateral direction at a half height between the top side and the bottom side, and wherein the following applies to widths B1, B2 and B3: B1-B2 B3.

公开(公告)号：US10516079B2

公开(公告)日：2019-12-24

申请号：US16006765

申请日：2018-06-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Alexander F. Pfeuffer ,  Dominik Scholz

IPC: H01L33/00 ,  H01L33/08 ,  H01L27/15 ,  H01L33/38 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L25/16 ,  H01L31/12

Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), an active layer (23), and a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and the first contact layer (41) and the second contact layer (42) run parallel to each other.

公开(公告)号：US20190013434A1

公开(公告)日：2019-01-10

申请号：US15775817

申请日：2017-02-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer ,  Isabel Otto

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40

Abstract: A method for manufacturing an optoelectronic component includes providing a growth substrate; applying a succession of semiconductor layers; structuring the succession of semiconductor layers; applying a sacrificial layer; depositing a metal layer; optionally planarizing using a dielectric material; forming a second terminal contact through the active region; applying a permanent support; and detaching the growth substrate and exposing the metal layer.

公开(公告)号：US09825208B2

公开(公告)日：2017-11-21

申请号：US15506059

申请日：2015-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Ion Stoll

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/00 ,  C25D13/02 ,  C25D13/12

CPC classification number: H01L33/504 ,  C25D13/02 ,  C25D13/12 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/005 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A method of producing an optoelectronic semiconductor component includes providing a semiconductor body; applying a photoconductive layer on a radiation exit surface of the semiconductor body, wherein the semiconductor body emits electromagnetic radiation during operation; exposing at least one sub-region of the photoconductive layer with electromagnetic radiation generated by the semiconductor body; and depositing a conversion layer on the sub-region of the photoconductive layer by an electrophoresis process.

公开(公告)号：US20170250323A1

公开(公告)日：2017-08-31

申请号：US15506059

申请日：2015-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Ion Stoll

IPC: H01L33/50 ,  C25D13/12 ,  C25D13/02 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L33/504 ,  C25D13/02 ,  C25D13/12 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/005 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A method of producing an optoelectronic semiconductor component includes providing a semiconductor body; applying a photoconductive layer on a radiation exit surface of the semiconductor body, wherein the semiconductor body emits electromagnetic radiation during operation; exposing at least one sub-region of the photoconductive layer with electromagnetic radiation generated by the semiconductor body; and depositing a conversion layer on the sub-region of the photoconductive layer by an electrophoresis process.