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公开(公告)号：US11133250B2
公开(公告)日：2021-09-28
申请号：US16615839
申请日：2018-05-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Dominik Scholz , Christian Leirer
IPC: H01L23/528 , H01L23/532
Abstract: A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.
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2.发明申请公开(公告)号：US20170179091A1
公开(公告)日：2017-06-22
申请号：US15304917
申请日：2015-04-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Alexander F. Pfeuffer
CPC classification number: H01L25/167 , H01L25/50 , H01L27/1214 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/62
Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence with an upper face and a lower face opposite the upper face, wherein the semiconductor layer sequence has an active layer that generates electromagnetic radiation, and a plurality of contact elements that electrically contact the semiconductor layer sequence arranged on the upper face, wherein the semiconductor chip is a thin-film semiconductor chip, the lower face is a radiation decoupling surface through which the radiation generated in the semiconductor layer sequence is decoupled, the contact elements can be electrically actuated individually and independently from one another, and the semiconductor layer sequence has a thickness of at most 3 μm.
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公开(公告)号：US11171258B2
公开(公告)日：2021-11-09
申请号：US16493438
申请日：2018-05-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Isabel Otto
Abstract: A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points.
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公开(公告)号：US10910513B2
公开(公告)日：2021-02-02
申请号：US16322995
申请日：2017-07-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Korbinian Perzlmaier
Abstract: A component includes a carrier; and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the carrier layer, and the carrier has a compensating layer directly adjacent to the carrier layer and configured to compensate for internal mechanical strains in the component.
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公开(公告)号：US20200152568A1
公开(公告)日：2020-05-14
申请号：US16615839
申请日：2018-05-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Dominik Scholz , Christian Leirer
IPC: H01L23/528 , H01L23/532
Abstract: A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20190312184A1
公开(公告)日：2019-10-10
申请号：US16335632
申请日：2017-10-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Alexander F. Pfeuffer , Britta Göötz , Norwin von Malm
Abstract: A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.
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公开(公告)号：US20190181296A1
公开(公告)日：2019-06-13
申请号：US16322995
申请日：2017-07-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Korbinian Perzlmaier
Abstract: A component includes a carrier; and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the carrier layer, and the carrier has a compensating layer directly adjacent to the carrier layer and configured to compensate for internal mechanical strains in the component.
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公开(公告)号：US11195981B2
公开(公告)日：2021-12-07
申请号：US16607226
申请日：2018-05-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Anna Kasprzak-Zablocka , Christian Leirer
Abstract: A method of manufacturing semiconductor device includes providing a radiation emitting semiconductor chip having a first main surface, applying a metallic seed layer to a second main surface opposite the first main surface, galvanically depositing first and second metallic volume regions on the seed layer, depositing an adhesion promoting layer on the volume regions, and applying a casting compound at least between contact points, wherein before the metallic volume regions are galvanically deposited, a dielectric layer is first applied to the seed layer over its entire surface and openings are produced in the dielectric layer by etching, and a material of the metallic volume regions is deposited through the openings of the dielectric layer, wherein the dielectric layer is underetched at boundaries to the openings and the underetches are filled with material of the metallic volume regions during the galvanical depositing of the metallic volume regions.
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9.发明授权公开(公告)号：US11107944B2
公开(公告)日：2021-08-31
申请号：US16491483
申请日：2018-03-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Christian Leirer
IPC: H01L31/18 , H01L31/0232 , H01L33/00 , H01L33/40 , H01L33/60
Abstract: A method of manufacturing an optoelectronic semiconductor chip includes a) providing a semiconductor layer sequence having an active region that generates or receives radiation on a substrate; b) forming at least one recess extending through the active region; c) forming a metallic reinforcement layer on the semiconductor layer sequence by galvanic deposition, the metallic reinforcement layer completely covering the semiconductor layer sequence and at least partially filling the recess; and d) removing the substrate, wherein the metallic reinforcement layer is leveled on a side facing away from the semiconductor layer sequence.
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10.发明授权公开(公告)号：US11069842B2
公开(公告)日：2021-07-20
申请号：US16498331
申请日：2018-04-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Christian Leirer
Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment a method include providing a semiconductor layer sequence having an active region and a plurality of emission regions, forming a plurality of first contact points, filling spacings between the first contact points with a molding compound, removing a growth substrate of the semiconductor layer sequence and arranging the semiconductor layer sequence on a connection carrier comprising a control circuit and a plurality of connection surfaces, wherein each of the first contact points is electrically conductively connected to a connection surface, wherein the emission regions are independently controllable by the control circuit, and wherein the molding compound serves as a temporary auxiliary carrier that mechanically stabilizes the semiconductor layer sequence during the removal of the growth substrate.
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