Method for making a transducer
    21.
    发明授权
    Method for making a transducer 有权
    制造换能器的方法

    公开(公告)号:US07642115B2

    公开(公告)日:2010-01-05

    申请号:US12426310

    申请日:2009-04-20

    Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.

    Abstract translation: 一种用于形成换能器的方法,包括提供绝缘体上半导体晶片的步骤,该晶片包括由电绝缘层分隔的第一和第二半导体层。 该方法还包括在晶片上沉积或生长压电薄膜或压阻薄膜,在压电或压阻薄膜上沉积或生长导电材料以形成至少一个电极,以及沉积或生长包括电连接部分的粘合层, 位于电极上或与电极电耦合。 该方法还包括提供具有位于其上的结合层的陶瓷基板的步骤,所述接合层包括电连接部分并且以通常匹配绝缘体上半导体晶片的结合层的方式被图案化。 该方法还包括使绝缘体上半导体晶片的接合层和衬底的接合层接合在一起,从而机械地和电耦合绝缘体上半导体晶片和衬底以形成换能器,其中电气 绝缘体上半导体晶片和衬底的结合层的连接部分通过结合层与周围环境流体隔离。

    Method for making a pressure sensor
    22.
    发明授权
    Method for making a pressure sensor 有权
    制造压力传感器的方法

    公开(公告)号:US07404247B2

    公开(公告)日:2008-07-29

    申请号:US11139207

    申请日:2005-05-27

    Abstract: A method for making a pressure sensor including the steps of providing a substrate and forming or locating a pressure sensing component on the substrate. The method further includes the step of, after the forming or locating step, etching a cavity in the substrate below the pressure sensing component to define a diaphragm above the cavity with the pressure sensing component located on the diaphragm. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the diaphragm.

    Abstract translation: 一种用于制造压力传感器的方法,包括以下步骤:提供基底并在基底上形成或定位压力感测部件。 该方法还包括以下步骤:在成形或定位步骤之后,蚀刻位于压力感测部件下方的衬底中的空腔,以在压电感测部件位于隔膜上方限定腔上方的隔膜。 压力感测部件包括导电电子气体,其在隔膜移动时改变其电阻。

    High temperature capacitive static/dynamic pressure sensors and methods of making the same

    公开(公告)号:US20120024073A1

    公开(公告)日:2012-02-02

    申请号:US12804874

    申请日:2010-07-30

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01L9/0075 G01L19/04 Y10T29/49002

    Abstract: Disclosed are capacitive pressure probes or sensors for high temperature applications. The capacitive pressure sensors of the present invention include, inter alia, a sapphire diaphragm which is disposed within an interior sensing chamber of the probe housing and has a first electrode formed on a central portion thereof. The central portion of the diaphragm and the first electrode are adapted and configured to deflect in response to pressure variations encountered within an interior sensing chamber and by the pressure sensor. A sapphire substrate which has a second electrode formed thereon is fused to the sapphire diaphragm about its periphery to form a sapphire stack and to define a reference chamber therebetween. Prior to fusing the sapphire diaphragm to the sapphire substrate, all contact surfaces are chemically treated and prepared using plasma activation, so as to create a bonding layer and to reduce the temperature required for the fusion.

    Wafer process flow for a high performance MEMS accelerometer
    24.
    发明授权
    Wafer process flow for a high performance MEMS accelerometer 失效
    用于高性能MEMS加速度计的晶圆工艺流程

    公开(公告)号:US07736931B1

    公开(公告)日:2010-06-15

    申请号:US12506022

    申请日:2009-07-20

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01P15/0802 G01P15/02

    Abstract: A process for fabricating a pendulous accelerometer, including the steps of: providing a first substrate having a top planar surface, etching a portion of the first substrate to a first predetermined depth from the top planar surface to form a plurality of first protrusions, providing a second substrate, etching a portion of the second substrate to a second predetermined depth to form a plurality of second protrusions, bonding planar surfaces of the first protrusions to planar surfaces of the second protrusions, and etching a portion of the first substrate from an opposite side of the first substrate to a third predetermined depth equal to or greater than the difference between the total thickness of the first substrate and the first predetermined depth to form a freely rotatable sensing plate that includes a substantially hollow proof mass.

    Abstract translation: 一种用于制造下摆加速度计的方法,包括以下步骤:提供具有顶部平坦表面的第一基底,将第一基底的一部分从顶部平坦表面蚀刻到第一预定深度以形成多个第一突起,从而提供 第二基板,将第二基板的一部分蚀刻到第二预定深度以形成多个第二突起,将第一突起的平坦表面接合到第二突起的平面表面,以及从相对侧蚀刻第一基板的一部分 的第三预定深度等于或大于第一基板的总厚度与第一预定深度之间的差,以形成包括基本上中空的质量块的可自由旋转的检测板。

    Micro mirror arrays and microstructures with solderable connection sites
    25.
    发明授权
    Micro mirror arrays and microstructures with solderable connection sites 失效
    具有可焊接连接点的微镜阵列和微结构

    公开(公告)号:US07203394B2

    公开(公告)日:2007-04-10

    申请号:US10620119

    申请日:2003-07-15

    CPC classification number: B81C1/0023 B81B2201/042 G02B26/0841

    Abstract: A micro mirror array including an upper wafer portion having a plurality of movable reflective surfaces located thereon, the upper wafer portion defining a coverage area in top view. The array further includes a lower wafer portion located generally below and coupled to the upper wafer portion. The lower wafer portion includes at least one connection site located thereon, the at least one connection site being electrically or operatively coupled to at least one component which can control the movement of at least one of the reflective surfaces. The at least one connection site is not generally located within the coverage area of the upper wafer portion.

    Abstract translation: 一种微镜阵列,包括具有位于其上的多个可移动反射表面的上晶片部分,上晶片部分在顶视图中限定覆盖区域。 该阵列还包括下部晶片部分,该下部晶片部分大致位于上部晶片部分下方并耦合到该上部晶片部分。 下晶片部分包括位于其上的至少一个连接部位,所述至少一个连接部位电连接或可操作地耦合到至少一个可控制至少一个反射表面的部件的部件。 至少一个连接位置通常不位于上晶片部分的覆盖区域内。

    Micro mirror structure with flat reflective coating
    26.
    发明授权
    Micro mirror structure with flat reflective coating 失效
    微镜结构,平面反光涂层

    公开(公告)号:US06778315B2

    公开(公告)日:2004-08-17

    申请号:US10254318

    申请日:2002-09-25

    Abstract: A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about −600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.

    Abstract translation: 一种微镜结构,包括多个可单独移动的反射镜。 每个反射镜在大约20摄氏度的温度下具有从顶部透视图的大致凹入的形状,并且在约85摄氏度的温度下从顶部的角度具有大致凸形的形状。 在一个实施例中,在大约20摄氏度的温度下,曲率半径可以大于约500mm,并且在约85摄氏度的温度下可以在约10微米的厚度下小于约-600mm。 在另一个实施例中,本发明是一种微镜结构,其包括以阵列布置的多个单独可移动的反射镜。 每个反射镜包括衬底,位于衬底上方的扩散阻挡层和位于扩散阻挡层上方的反射层。 扩散阻挡层通常限制顶部反射层通过扩散阻挡层的扩散。

    Silicon Micromachined Hemispherical Resonance Gyroscope and Processing Method Thereof
    27.
    发明申请
    Silicon Micromachined Hemispherical Resonance Gyroscope and Processing Method Thereof 审中-公开
    硅微加工半球谐振陀螺仪及其加工方法

    公开(公告)号:US20170038208A1

    公开(公告)日:2017-02-09

    申请号:US14408177

    申请日:2012-08-31

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01C19/5691 H01J37/32

    Abstract: The present invention relates to a micromachined hemispherical resonance gyroscope, which comprises a resonant layer, said resonant layer comprising a hemispherical shell which has a concave inner surface and an outer surface opposite to the inner surface, and top point of the hemispherical shell being its anchor point; several silicon hemispherical electrodes being arranged around said hemispherical shell, the silicon hemispherical electrodes including driving electrodes, equilibrium electrodes, signal detection electrodes and shielded electrodes, the shielded electrodes separating the driving electrodes and the equilibrium electrodes from the signal detection electrodes, the hemispherical shell and the several silicon spherical electrodes which surround the hemispherical shell constituting several capacitors; the resonant layer being made of polysilicon or silica or silicon oxide or diamond. The hemispherical resonance micromechanical gyroscope utilizes a processing method on the basis of silicon micromachining, which leads to small size and low production cost, as well as batch production capacity, meanwhile its sensitivity is independent of amplitude and its driving voltage could be very low, as a result its output noise could be significantly reduced, and its accuracy is better than the gyroscope products in the prior art.

    Abstract translation: 微机械半球谐振陀螺仪技术领域本发明涉及一种微加工半球谐振陀螺仪,其包括谐振层,所述谐振层包括半球形外壳,其具有凹内表面和与内表面相对的外表面,半球壳的顶点为其锚 点; 所述半球形壳体周围布置有多个硅半球形电极,所述硅半球形电极包括驱动电极,平衡电极,信号检测电极和屏蔽电极,所述屏蔽电极将驱动电极和平衡电极与信号检测电极,半球壳和 围绕构成若干电容器的半球形壳体的几个硅球形电极; 谐振层由多晶硅或二氧化硅或氧化硅或金刚石制成。 半球谐振微机械陀螺仪采用硅微机械加工的方法,导致体积小,生产成本低,批量生产能力强,灵敏度与振幅无关,驱动电压可能非常低, 结果,其输出噪声可以显着降低,并且其精度优于现有技术中的陀螺仪产品。

    In-plane capacitive mems accelerometer
    28.
    发明授权
    In-plane capacitive mems accelerometer 有权
    平面电容mems加速度计

    公开(公告)号:US08656778B2

    公开(公告)日:2014-02-25

    申请号:US12982720

    申请日:2010-12-30

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0814

    Abstract: A system for determining in-plane acceleration of an object. The system includes an in-plane accelerometer with a substrate rigidly attached to an object, and a proof mass—formed from a single piece of material—movably positioned a predetermined distance above the substrate. The proof mass includes a plurality of electrode protrusions extending downward from the proof mass to form a gap of varying height between the proof mass and the substrate. The proof mass is configured to move in a direction parallel to the upper surfaces of each of the plurality of substrate electrodes when the object is accelerating, which results in a change in the area of the gap, and a change in capacitance between the substrate and the proof mass. The in-plane accelerometer can be fabricated using the same techniques used to fabricate an out-of-plane accelerometer and is suitable for high-shock applications.

    Abstract translation: 一种用于确定物体的平面内加速度的系统。 该系统包括面内加速度计,其具有刚性地连接到物体的基底,以及由单个材料块质量形成的 - 可移动地定位在基底上方预定距离的检测体。 检测质量包括从检验质量块向下延伸的多个电极突起,以在检验质量块和衬底之间形成不同高度的间隙。 检测质量被配置为当物体加速时在平行于多个基板电极中的每一个的上表面的方向上移动,这导致间隙的面积的变化,以及基板和 证明质量。 平面内加速度计可以使用与制造平面外加速度计相同的技术制造,适用于高冲击应用。

    IN-PLANE CAPACITIVE MEMS ACCELEROMETER
    29.
    发明申请
    IN-PLANE CAPACITIVE MEMS ACCELEROMETER 有权
    内置电容式MEMS加速度计

    公开(公告)号:US20120167685A1

    公开(公告)日:2012-07-05

    申请号:US12982720

    申请日:2010-12-30

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0814

    Abstract: A system for determining in-plane acceleration of an object. The system includes an in-plane accelerometer with a substrate rigidly attached to an object, and a proof mass—formed from a single piece of material—movably positioned a predetermined distance above the substrate. The proof mass includes a plurality of electrode protrusions extending downward from the proof mass to form a gap of varying height between the proof mass and the substrate. The proof mass is configured to move in a direction parallel to the upper surfaces of each of the plurality of substrate electrodes when the object is accelerating, which results in a change in the area of the gap, and a change in capacitance between the substrate and the proof mass. The in-plane accelerometer can be fabricated using the same techniques used to fabricate an out-of-plane accelerometer and is suitable for high-shock applications.

    Abstract translation: 一种用于确定物体的平面内加速度的系统。 该系统包括面内加速度计,其具有刚性地连接到物体的基底,以及由单个材料块质量形成的 - 可移动地定位在基底上方预定距离的检测体。 检测质量包括从检验质量块向下延伸的多个电极突起,以在检验质量块和衬底之间形成不同高度的间隙。 检测质量被配置为当物体加速时在平行于多个基板电极中的每一个的上表面的方向上移动,这导致间隙的面积的变化,以及基板和 证明质量。 平面内加速度计可以使用与制造平面外加速度计相同的技术制造,适用于高冲击应用。

    Pendulous accelerometer with balanced gas damping
    30.
    发明申请
    Pendulous accelerometer with balanced gas damping 有权
    Pendulous加速度计具有均衡的气体阻尼

    公开(公告)号:US20090107238A1

    公开(公告)日:2009-04-30

    申请号:US11978090

    申请日:2007-10-26

    Applicant: Shuwen Guo

    Inventor: Shuwen Guo

    CPC classification number: G01P15/125 G01P15/0802 G01P15/131 G01P2015/0831

    Abstract: A pendulous capacitive accelerometer including a substrate having a substantially planar upper surface with an electrode section, and a sensing plate having a central anchor portion supported on the upper surface of the substrate to define a hinge axis. The sensing plate includes a solid proof mass on a first side of the central anchor portion and a substantially hollow proof mass on a second side of the central anchor portion, providing for reduced overall chip size and balanced gas damping. The solid proof mass has a first lower surface with a first electrode element thereon, and the substantially hollow proof mass has a second lower surface with a second electrode element thereon. Both the solid proof mass and the hollow proof mass have the same capacitive sensing area. The sensing plate rotates about the hinge axis relative to the upper surface of the substrate in response to an acceleration.

    Abstract translation: 一种下摆电容式加速度计,包括具有基本平坦的上表面的基板,具有电极部分,以及感测板,其具有支撑在基板的上表面上以限定铰链轴线的中心锚固部分。 感测板包括在中心锚固部分的第一侧上的固体质量块和在中心锚固部分的第二侧上的基本上中空的质量块,从而提供减小的整体芯片尺寸和平衡的气体阻尼。 固体质量体具有在其上具有第一电极元件的第一下表面,并且基本上中空的质量块具有在其上的第二电极元件的第二下表面。 固体质量块和中空质量块均具有相同的电容感应区域。 感测板响应于加速度相对于基板的上表面围绕铰链轴线旋转。

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