Dual-Mode Image Sensor With A Signal-Separating Color Filter Array, And Method For Same
    22.
    发明申请
    Dual-Mode Image Sensor With A Signal-Separating Color Filter Array, And Method For Same 有权
    具有信号分离滤色器阵列的双模式图像传感器及其相同方法

    公开(公告)号:US20170062511A1

    公开(公告)日:2017-03-02

    申请号:US15348529

    申请日:2016-11-10

    Abstract: A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.

    Abstract translation: 具有信号分离CFA的双模式图像传感器包括包括多个光电二极管区域的基板和具有均匀的第一高度的多个高光谱滤光器,并且用于传输第一电磁波长范围。 每个高光谱滤光器设置在衬底上并与相应的光电二极管区域对准。 图像传感器还包括用于在第二电磁波长范围内传输一个或多个光谱带的多个短光谱滤波器。 每个短光谱滤光器设置在衬底上并与相应的光电二极管区域对准。 图像传感器还包括用于阻挡第一电磁波长范围的多个单层阻挡滤波器。 每个单层阻塞滤波器设置在相应的短光谱滤波器上。 每个单层阻挡滤波器及其相应的短光谱滤波器具有基本上等于第一高度的组合高度。

    Color filter array with reference pixel to reduce spectral crosstalk
    23.
    发明授权
    Color filter array with reference pixel to reduce spectral crosstalk 有权
    具有参考像素的滤色器阵列,以减少光谱串扰

    公开(公告)号:US09479745B2

    公开(公告)日:2016-10-25

    申请号:US14491039

    申请日:2014-09-19

    Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.

    Abstract translation: 滤色器阵列包括多个平铺的最小重复单元,每个最小重复单元包括M×N个单独滤波器组。 每个最小重复单元包括多个成像过滤器,包括具有至少第一,第二和第三光响应的单个过滤器和至少一个具有参考光响应的参考过滤器,其中参考过滤器位于成像过滤器之间,其中参考光响应 通过多个成像滤波器基本上发射未滤波的滤波器的入射到滤色器阵列上的串扰谱。 公开和要求保护其他实施例。

    Method of fabricating multi-wafer image sensor
    24.
    发明授权
    Method of fabricating multi-wafer image sensor 有权
    制造多晶片图像传感器的方法

    公开(公告)号:US09379159B2

    公开(公告)日:2016-06-28

    申请号:US14515307

    申请日:2014-10-15

    Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

    Abstract translation: 制造图像传感器的方法包括在形成像素阵列之后,在半导体衬底的成像区域中形成像素阵列并在半导体衬底的周边区域中形成沟槽。 周边区域位于成像区域的周边。 沟槽填充绝缘材料。 在用绝缘材料填充沟槽之后形成互连层。 第一晶片结合到第二晶片。 第一晶片包括互连层和半导体衬底。 半导体衬底的背面变薄以露出绝缘材料。 通过绝缘材料形成通孔。 通孔腔向下延伸到第二晶片的第二互连层。 通孔腔填充导电材料以形成通孔。 绝缘材料使导电材料与半导体衬底绝缘。

    Optical isolation grid over color filter array
    25.
    发明授权
    Optical isolation grid over color filter array 有权
    滤色器阵列上的光隔离网格

    公开(公告)号:US09276029B1

    公开(公告)日:2016-03-01

    申请号:US14601016

    申请日:2015-01-20

    Abstract: A color image sensor includes a plurality of pixel cells arranged in a pixel array. A plurality of color filters is arranged in a color filter array disposed over the pixel array. Each color filter is aligned with a corresponding underlying pixel cell. An optical isolation grid is disposed over the color filter array such that incident light is directed through the optical isolation grid prior to be being directed through the color filter array to the pixel array. The optical isolation grid includes a plurality of sidewalls arranged to define a plurality of openings in the optical isolation grid. Each opening is aligned with a corresponding color filter such that each color filter is optically isolated by the optical isolation grid to receive incident light only through a corresponding aligned one of the plurality of openings.

    Abstract translation: 彩色图像传感器包括以像素阵列排列的多个像素单元。 多个滤色器布置在设置在像素阵列上的滤色器阵列中。 每个滤色器与相应的底层像素单元对齐。 光学隔离栅格设置在滤色器阵列上方,使得入射光在被引导通过滤色器阵列到像素阵列之前被引导通过光隔离栅格。 光隔离栅格包括多个侧壁,其布置成在光隔离栅格中限定多个开口。 每个开口与相应的滤色器对准,使得每个滤色器通过光学隔离栅格光学隔离,以仅通过多个开口中的相应对准的一个开口接收入射光。

    PROJECTOR-CAMERA SYSTEM WITH AN INTERACTIVE SCREEN
    26.
    发明申请
    PROJECTOR-CAMERA SYSTEM WITH AN INTERACTIVE SCREEN 审中-公开
    具有交互式画面的投影机相机系统

    公开(公告)号:US20150102993A1

    公开(公告)日:2015-04-16

    申请号:US14050778

    申请日:2013-10-10

    CPC classification number: G06F3/038 G06F3/0416 G06F3/0425

    Abstract: A projector-camera system includes a projector coupled to back project a first image on a translucent diffusing screen. A camera is coupled to capture a second image from a back side of the translucent diffusing screen. The second image includes the first image back projected on the translucent diffusing screen and a shadow of a pointing device cast on a front side of the translucent diffusing screen. The pointing device is on the front side of the translucent diffusing screen and is in close proximity to the translucent diffusing screen. A processing block is coupled to the projector and the camera to generate a third image including the shadow of the pointing device. The processing block is further coupled to activate a command in a main computer coupled to the processing block in response to a relative position of the shadow of the pointing device in the third image.

    Abstract translation: 投影仪相机系统包括投影仪,其连接到背投影在半透明漫射屏幕上的第一图像。 耦合相机以从半透明漫射屏幕的背面捕获第二图像。 第二图像包括投影在半透明漫射屏幕上的第一图像和投射在半透明漫射屏幕的前侧上的指示设备的阴影。 指示装置位于半透明漫射屏幕的正面,并且靠近半透明漫射屏幕。 处理块耦合到投影仪和相机以产生包括指示设备的阴影的第三图像。 处理块还被耦合以响应于指示设备在第三图像中的阴影的相对位置来激活耦合到处理块的主计算机中的命令。

    OPTICAL SHIELD IN A PIXEL CELL PLANARIZATION LAYER FOR BLACK LEVEL CORRECTION
    27.
    发明申请
    OPTICAL SHIELD IN A PIXEL CELL PLANARIZATION LAYER FOR BLACK LEVEL CORRECTION 有权
    用于黑色电平校正的像素单元平面化层中的光学屏蔽

    公开(公告)号:US20150076639A1

    公开(公告)日:2015-03-19

    申请号:US14030395

    申请日:2013-09-18

    CPC classification number: H01L27/14623 H01L27/14621 H01L27/14627

    Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.

    Abstract translation: 像素阵列包括设置在半导体层中并布置在像素阵列中的多个光电二极管。 滤色器层靠近半导体层设置。 光通过滤色器层被引导到多个光电二极管中的至少第一个。 光屏蔽层靠近滤色器层设置。 滤色器层设置在光学屏蔽层和半导体层之间。 光屏蔽层屏蔽来自光的多个光电二极管中的至少一个。

    Image Sensor for Infrared Sensing and Fabrication Thereof

    公开(公告)号:US20230215887A1

    公开(公告)日:2023-07-06

    申请号:US18050402

    申请日:2022-10-27

    Abstract: The invention disclose a pixel in an image sensor capable of detecting infrared light and associated fabrication method. The image sensor includes a semiconductor substrate has a first photodiode and a second photodiode adjacent to the first photodiode. A planarized dielectric layer having a recessed region is disposed on a first side of the semiconductor substrate. A first color filter disposed on the planarized dielectric layer aligned with the first photodiode and configured to transmit light of a first wavelength range. A second color filter disposed in the recessed region and on the planarized dielectric layer. The second color filter is aligned with the second photodiode, and configured to transmit light of a second wavelength range that is different from the first wavelength range. A first depth-wise thickness of the first color filter is less than a second depth-wise thickness of the second color filter.

    IMAGE SENSOR WITH SUBTRACTIVE COLOR FILTER PATTERN

    公开(公告)号:US20220038664A1

    公开(公告)日:2022-02-03

    申请号:US16983844

    申请日:2020-08-03

    Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.

    Chip scale package for an image sensor

    公开(公告)号:US10297627B1

    公开(公告)日:2019-05-21

    申请号:US15806522

    申请日:2017-11-08

    Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.

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