公开(公告)号：US20220014700A1

公开(公告)日：2022-01-13

申请号：US17483655

申请日：2021-09-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAYOSHI YAMADA ,  YOSHIHIRO SATO ,  TAIJI NODA

IPC: H04N5/378 ,  H01L27/146

Abstract: An imaging device includes a semiconductor substrate and pixels, which includes a first pixel and second pixels adjacent thereto. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. In the first pixel and the plurality of second pixels, a distance between the closest plugs of the first plugs and the second plugs is larger than or equal to one-half of a pixel pitch, when viewed in a normal direction of the semiconductor substrate.

公开(公告)号：US20210143218A1

公开(公告)日：2021-05-13

申请号：US17154011

申请日：2021-01-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIAKI SATOU ,  YOSHIHIRO SATO ,  MASASHI MURAKAMI

IPC: H01L27/30 ,  H01L27/146 ,  H01L23/522

Abstract: An imaging device includes a semiconductor substrate, a first pixel that performs photoelectric conversion, and a first shield. The first pixel includes a first diffusion region that is present in the semiconductor substrate, a first wiring line connected to the first diffusion region, a first transistor, and a first voltage line that makes up at least part of a voltage supply path to a drain or a source of the first transistor. A first signal charge obtained by photoelectric conversion performed by the first pixel flows through the first wiring line. The first signal charge flows into a gate of the first transistor via the first wiring line. Voltages that are different from each other are applied to the first voltage line. A distance between the first voltage line and the first shield is smaller than a distance between the first voltage line and the first wiring line.

公开(公告)号：US20170264840A1

公开(公告)日：2017-09-14

申请号：US15446545

申请日：2017-03-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHIHIRO SATO ,  YOSHINORI TAKAMI ,  MASAYUKI TAKASE ,  MASASHI MURAKAMI

IPC: H04N5/361 ,  H04N5/369 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/363 ,  H04N5/3698 ,  H04N5/3745

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

公开(公告)号：US20230085674A1

公开(公告)日：2023-03-23

申请号：US18058908

申请日：2022-11-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAYUKI NISHITANI ,  SOGO OTA ,  YASUO MIYAKE ,  YOSHIHIRO SATO ,  KAZUKO NISHIMURA ,  TSUTOMU KOBAYASHI

IPC: H01L27/148 ,  H01L27/146

Abstract: An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

公开(公告)号：US20220310673A1

公开(公告)日：2022-09-29

申请号：US17838911

申请日：2022-06-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHIHIRO SATO ,  YASUYUKI ENDOH ,  HIROYUKI AMIKAWA

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/374 ,  H04N5/378 ,  H01L27/02

Abstract: An imaging device having a semiconductor substrate including: a semiconductor region including an impurity of a first conductivity type, a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and a second diffusion region that includes an impurity of the second conductivity type and that directly accumulates at least a part of the charges generated in the first diffusion region. The imaging device further includes a contact plug in contact with the second diffusion region, and a capacitive element electrically connected to the second diffusion region through the contact plug.

公开(公告)号：US20220028916A1

公开(公告)日：2022-01-27

申请号：US17493923

申请日：2021-10-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUUKO TOMEKAWA ,  YOSHIHIRO SATO

IPC: H01L27/146

Abstract: An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

公开(公告)号：US20210409634A1

公开(公告)日：2021-12-30

申请号：US17472784

申请日：2021-09-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO

IPC: H04N5/378 ,  H04N5/369

Abstract: An imaging device includes pixels. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, a third photoelectric conversion layer, a third pixel electrode, a first counter electrode, and a second counter electrode. The first pixel electrode, the first photoelectric conversion layer, the first counter electrode, the second photoelectric conversion layer, the second pixel electrode, the second counter electrode, the third photoelectric conversion layer, and the third pixel electrode are arranged in this order.

公开(公告)号：US20210408099A1

公开(公告)日：2021-12-30

申请号：US17474521

申请日：2021-09-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO

IPC: H01L27/146

Abstract: An imaging device includes pixels. Each of the pixels includes a first photoelectric conversion layer that converts light into first electric charge, a first pixel electrode that collects the first electric charge, a second photoelectric conversion layer that is arranged above the first photoelectric conversion layer and that converts light into second electric charge, and a second pixel electrode that collects the second electric charge. The area of the first pixel electrode is smaller than the area of the second pixel electrode.

公开(公告)号：US20210185249A1

公开(公告)日：2021-06-17

申请号：US17185845

申请日：2021-02-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASASHI MURAKAMI ,  YASUNORI INOUE ,  YOSHIHIRO SATO ,  KAZUKO NISHIMURA

IPC: H04N5/343 ,  H04N5/374 ,  H01L27/146

Abstract: An imaging device includes a first pixel. The first pixel has a photoelectric converting portion, a first capacitance element, and a first transistor. The photoelectric converting portion converts incident light into signal charge. The first capacitance element includes a first terminal and a second terminal, the first terminal being electrically connected to the photoelectric converting portion in at least a period of exposure. The first transistor includes a first source and a first drain, one of the first source and the first drain is electrically connected to the second terminal, and a direct-current potential is applied to the other of the first source and the first drain.

公开(公告)号：US20200083274A1

公开(公告)日：2020-03-12

申请号：US16535963

申请日：2019-08-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHINORI TAKAMI ,  YOSHIHIRO SATO

IPC: H01L27/146

Abstract: An imaging device includes: a semiconductor layer including a first region of a first conductivity, a second region of a second conductivity opposite to the first conductivity, and a third region of the second conductivity; a photoelectric converter electrically connected to the first region and converting light into charge; a first transistor including a first source, a first drain, and a first gate above the second region, the first region corresponding to the first source or drain; and a second transistor including a second source, a second drain, and a second gate of the second conductivity above the third region, the first region corresponding to the second source or drain, and the second gate being electrically connected to the first region. The concentration of an impurity of the second conductivity in the third region is higher than that of an impurity of the second conductivity in the second region.