公开(公告)号：US4739414A

公开(公告)日：1988-04-19

申请号：US885988

申请日：1986-07-15

申请人： Roger W. Pryor ,  Stephen J. Hudgens ,  Prem Nath ,  Ronald G. Mulberger

发明人： Roger W. Pryor ,  Stephen J. Hudgens ,  Prem Nath ,  Ronald G. Mulberger

IPC分类号： H04N1/031 ,  H04N1/04 ,  H04N1/10 ,  H04N1/19 ,  H04N1/193 ,  H04N1/401

CPC分类号： H04N1/0312 ,  H04N1/0311 ,  H04N1/04 ,  H04N1/1017 ,  H04N1/103 ,  H04N1/1043 ,  H04N1/1048 ,  H04N1/19 ,  H04N1/401 ,  H04N1/193 ,  H04N2201/0438

摘要： Apparatus for producing electronic signals which are representative of a detectable condition on an image-bearing surface. The apparatus includes an elongated array of distinct thin film photosensitive elements formed on a common flexible large area substrate. The elongated array of photosensitive elements are fabricated as a large area, photovoltaic structure formed of a plurality of thin film layers, including a first layer of thin film conductive material. The discrete photosensitive elements are defined by patterning of the conductive layer into shaped regions which determine the overall configuration and dimensions of each element.

摘要翻译： 用于产生代表图像承载表面上可检测状态的电子信号的装置。 该装置包括形成在共同柔性大面积基板上的不同薄膜感光元件的细长阵列。 细长的感光元件阵列被制造为由多个薄膜层形成的大面积的光伏结构，其包括第一层薄膜导电材料。 离散的光敏元件通过将导电层图案化成成形区域来限定，这些区域确定了每个元件的整体结构和尺寸。

公开(公告)号：US4698234A

公开(公告)日：1987-10-06

申请号：US897449

申请日：1986-10-17

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US4637895A

公开(公告)日：1987-01-20

申请号：US718661

申请日：1985-04-01

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  C09K11/07

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US4633034A

公开(公告)日：1986-12-30

申请号：US699524

申请日：1985-02-08

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/0224 ,  H01L31/076 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022425 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes a pattern of current flow restricting material operatively disposed so as to limit the flow of electrical current between the substrate and the current collector of the device. Also disclosed are methods for the fabrication of the improved device.

摘要翻译： 显示增加的短路和分流缺陷公差的改进的光伏器件包括可操作地设置以限制基板和器件的集电器之间的电流流动的电流限流材料的图案。 还公开了用于制造改进的装置的方法。

公开(公告)号：US4624862A

公开(公告)日：1986-11-25

申请号：US668435

申请日：1984-11-05

申请人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

发明人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

IPC分类号： C23C16/30 ,  C23C14/14 ,  C23C16/50 ,  G03G5/082 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  B05D5/12

CPC分类号： H01L31/206 ,  G03G5/08264 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

公开(公告)号：US4605565A

公开(公告)日：1986-08-12

申请号：US448139

申请日：1982-12-09

申请人： Prem Nath

发明人： Prem Nath

IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/32 ,  C23C14/44 ,  C23C16/50 ,  H01B5/14 ,  H01B13/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L31/04 ,  H01L31/18 ,  H01L31/20 ,  B05D3/06

CPC分类号： H01L31/1884 ,  C23C14/086 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of and apparatus for depositing metallic oxide coatings that are highly electrically transmissive and highly electrically conductive onto a substrate. An r.f. signal is employed to develop an ionized plasma of metal and oxygen atoms, the plasma being adapted for deposition onto a large area substrate which preferably includes semiconductor layers thereon. The method and apparatus are particularly adapted for the improved deposition of transmissive and conductive coatings which include low melting point metals onto the surface of plastic, glass or metallic substrates. The deposition may be accomplished in either a continuous or batch process mode.

摘要翻译： 一种用于沉积金属氧化物涂层的方法和装置，其在基底上具有高电透过性和高导电性。 一个r.f. 信号用于开发金属和氧原子的离子化等离子体，等离子体适于沉积到大面积的衬底上，其中优选地包括半导体层。 该方法和装置特别适用于将包含低熔点金属的透射和导电涂层改进沉积到塑料，玻璃或金属基材的表面上。 沉积可以以连续或间歇工艺模式实现。

公开(公告)号：US4590327A

公开(公告)日：1986-05-20

申请号：US653801

申请日：1984-09-24

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/076 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022433 ,  Y02E10/548

摘要： Disclosed is an improved photovoltaic device design and method. The design is especially useful for large area photovoltaic devices and includes a first electrode, a semiconductor body over the first electrode, a transparent electrically conductive layer over the semiconductor body and a bus grid structure in electrical contact with the conductor layer for collecting and carrying current generated by the photovoltaic device. Structure is provided for reducing the degrading effect of a low resistance current path or short in the semiconductor body.The structure for reducing the degrading effect of a low resistance current path can be a specifically designed transparent electrically conductive layer, electrical isolation of the current carrying portions of the bus grid structure from the conductive layer, resistive connections of the current collecting fingers to the remainder of the bus grid structure, a buffered bus grid structure or a fuse-type connection or the grid or current collecting fingers which terminates when the current reaches a predetermined amount.Methods of fabricating photovoltaic devices as disclosed herein are provided.

摘要翻译： 公开了一种改进的光伏器件设计和方法。 该设计对于大面积光伏器件特别有用，并且包括第一电极，在第一电极上方的半导体本体，半导体主体上方的透明导电层和与导体层电接触的用于收集和承载电流的总线栅格结构 由光伏器件产生。 提供了用于降低半导体本体中低电阻电流路径或短路的劣化效应的结构。 用于降低低电阻电流路径的降级效果的结构可以是专门设计的透明导电层，总线栅格结构的载流部分与导电层的电隔离，电流收集指状物与其余部分的电阻连接 总线网格结构，缓冲总线网格结构或熔丝式连接，或电流或集电指状物，当电流达到预定量时终止。 提供制造本文公开的光伏器件的方法。

公开(公告)号：US4537795A

公开(公告)日：1985-08-27

申请号：US637358

申请日：1984-08-03

申请人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

发明人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

IPC分类号： C23C16/54 ,  F16J15/40 ,  H01J37/32 ,  H01L21/365

CPC分类号： H01J37/3244 ,  C23C16/545 ,  F16J15/40

摘要： A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.

摘要翻译： 一种用于引入吹扫气体通过适于与辉光放电沉积设备一起使用的挡板系统的方法，其中连续的非晶半导体层沉积在衬底上。 沉积设备包括至少一对相邻的专用沉积室，每个室中引入不同的工艺气体，这些室通过气门可操作地连接。 惰性气体被扫过气门，以最小化来自腔室的工艺气体的反向扩散。 挡板系统适用于防止所述吹扫气体在行进通过气体闸道通道时进入湍流。 此外，引入每单位时间吹扫气体的足够体积以确保一些吹扫气体流入第一室的阴极区域，从而基本上防止工艺气体和等离子体从阴极区域逸出并形成硅烷粉末。

公开(公告)号：US4336277A

公开(公告)日：1982-06-22

申请号：US191407

申请日：1980-09-29

申请人： Rointan Bunshah ,  Prem Nath

发明人： Rointan Bunshah ,  Prem Nath

IPC分类号： C03C17/245 ,  C23C14/00 ,  C23C14/32 ,  H01L31/18 ,  C23C13/12

CPC分类号： C23C14/0021 ,  C03C17/245 ,  C23C14/32 ,  H01L31/1884 ,  C03C2217/215 ,  C03C2217/231 ,  C03C2218/15 ,  C03C2218/152 ,  Y02E10/50

摘要： Process and apparatus for producing transparent electrical conducting thin films by activated reactive evaporation. Thin films of low melting point metals and alloys, such as indium oxide and indium oxide doped with tin, are produced by physical vapor deposition. The metal or alloy is vaporized by electrical resistance heating in a vacuum chamber, oxygen and an inert gas such as argon are introduced into the chamber, and vapor and gas are ionized by a beam of low energy electrons in a reaction zone between the resistance heater and the substrate. There is a reaction between the ionized oxygen and the metal vapor resulting in the metal oxide which deposits on the substrate as a thin film which is ready for use without requiring post deposition heat treatment.

摘要翻译： 通过活性反应蒸发生产透明导电薄膜的方法和设备。 通过物理气相沉积制造低熔点金属和合金的薄膜，例如掺杂有锡的氧化铟和氧化铟。 金属或合金通过真空室中的电阻加热而蒸发，氧气和惰性气体如氩气被引入到腔室中，并且在电阻加热器之间的反应区域中，通过低能电子束使蒸气和气体离子化 和基板。 电离氧和金属蒸汽之间存在反应，导致金属氧化物沉积在基板上，作为薄膜，其可以在不需要后沉积热处理的情况下准备使用。

公开(公告)号：US5474620A

公开(公告)日：1995-12-12

申请号：US243410

申请日：1994-05-16

申请人： Prem Nath ,  Craig N. Vogeli

发明人： Prem Nath ,  Craig N. Vogeli

IPC分类号： H01L31/048

CPC分类号： H01L31/048 ,  Y02E10/50 ,  Y10T156/1092 ,  Y10T156/1093

摘要： A composite laminate specifically adapted to protect the light incident surface of a photovoltaic module from cuts which could create a short circuit includes a plurality of stacked layer pairs. The first layer of each pair is a glass fiber material and the second layer is a thermoplastic. The layers are disposed in a mutually interpenetrating relationship and topped with a thin transparent protective layer, such as a layer of a fluoropolymer. this combination of layer pairs has been demonstrated to provide sufficient protection to meet Underwriters Laboratories specifications (UL 1703 Section 23. Cut Test) for flat plate photovoltaic modules and panels.

摘要翻译： 特别适用于保护光伏模块的光入射表面的复合层压板不会产生可能产生短路的切口，包括多个堆叠层对。 每对的第一层是玻璃纤维材料，第二层是热塑性材料。 这些层以互相互穿的关系设置，并且覆盖有薄的透明保护层，例如氟聚合物层。 已经证明这种层对的组合可以提供足够的保护，以满足平板光伏模块和面板的美制保险实验室规范（UL 1703第23节切割测试）。