ANEUTRONIC MAGNETRON ENERGY GENERATOR
    1.
    发明申请
    ANEUTRONIC MAGNETRON ENERGY GENERATOR 有权
    ANEUTRONIC MAGNETRON能源发电机

    公开(公告)号:US20130235964A1

    公开(公告)日:2013-09-12

    申请号:US13416576

    申请日:2012-03-09

    申请人: Roger W. Pryor

    发明人: Roger W. Pryor

    IPC分类号: H05H1/54 G21B1/01

    CPC分类号: G21B3/006 H05H15/00

    摘要: An aneutronic magnetron energy generator that generates microwave energy from a fusion-fission reaction that produces alpha particles in response to a proton colliding with an 11B nucleus. The magnetron energy generator includes a magnetron having an anode resonator including a central chamber and a plurality of radially disposed cavities. A cathode assembly is provided at the center of the chamber and includes a cathode electrode that generates a proton plasma. A series of electrically isolated acceleration rings extend from the cathode electrode and operate to accelerate protons from the proton plasma towards an outer target ring composed of boron eleven (11B). The accelerated protons fuse with the 11B nuclei to generate the alpha particles that then interact with crossed electric and magnetic fields between the target ring and the cavities. The alpha particles resonate with the cavities and generate a current within the resonator that is collected.

    摘要翻译: 一种非对称磁控管能量发生器,其从熔融裂变反应产生微波能量,其产生响应于与11B核碰撞的质子的α粒子。 磁控管能量发生器包括具有阳极谐振器的磁控管,阳极谐振器包括中心室和多个径向设置的空腔。 阴极组件设置在室的中心,并且包括产生质子等离子体的阴极电极。 一系列电隔离的加速环从阴极延伸出来,用于将质子从质子等离子体加速到由11(11B)组成的外部目标环。 加速的质子与11B核融合,产生α粒子,然后与目标环和腔之间的交叉电场和磁场相互作用。 α粒子与空腔谐振并在收集的谐振器内产生电流。

    Electronic intelligent indenter
    2.
    发明授权
    Electronic intelligent indenter 失效
    电子智能压头

    公开(公告)号:US06904806B2

    公开(公告)日:2005-06-14

    申请号:US10197142

    申请日:2002-07-18

    申请人: Roger W. Pryor

    发明人: Roger W. Pryor

    摘要: An electronic intelligent indenter system that determines the hardness and the case depth of a hardened portion of a test part in a non-destructive manner. The system employs an electronic indenter tool having a tip. To determine the depth of the case hardened portion of the part, the indenter tip is placed in contact with the surface of the part, and a laser emits a laser beam pulse that impinges the surface of the part proximate the tip. The laser beam generates ultrasonic waves that propagate into the part. The ultrasonic waves reflect off of a transition between the case hardened portion and an unhardened portion of the part. A detector in the indenter system detects the reflected ultrasonic waves. The ultrasonic waves cause the detector to generate a signal identifying the time between when the laser pulse is emitted and when the reflected wave is received. The signal is analyzed by a controller that compares the signal to a standard of calibration for a reflected wave from a hardened portion of a calibration part having a greater depth than the test part.

    摘要翻译: 一种电子智能压头系统,以非破坏性的方式确定测试部件的硬化部分的硬度和壳体深度。 该系统采用具有尖端的电子压头工具。 为了确定部件的壳体硬化部分的深度,压头尖端被放置成与部件的表面接触,并且激光器发射激光束脉冲,其将部件的表面撞击靠近尖端。 激光束产生传播到该部分的超声波。 超声波从外壳硬化部分和部件的未硬化部分之间的过渡反射。 压头系统中的检测器检测反射的超声波。 超声波使得检测器产生标识激光脉冲发射时和接收反射波之间的时间的信号。 信号由控制器分析,该控制器将信号与来自具有比测试部件更深的校准部件的硬化部分的反射波的校准标准进行比较。

    Method for the production of scratch resistance articles and the scratch
resistance articles so produced
    3.
    发明授权
    Method for the production of scratch resistance articles and the scratch resistance articles so produced 失效
    制造耐刮擦制品的方法和如此制造的耐刮擦制品

    公开(公告)号:US5492769A

    公开(公告)日:1996-02-20

    申请号:US948354

    申请日:1992-09-17

    摘要: A method is provided for improving the scratch or surface wear resistance of substrates by embedding discrete, hard particles within the surface layer of the substrate. Discrete, hard particles are applied to the substrate surface and then embedded within and bonded to the surface layer of the substrate by softening the substrate surface layer by either thermal or solvent means. Suitable substrate materials include thermoplastics, thermoset plastics, polymers, glass, soft metals, and composites. Suitable hard particles include diamond, silicon dioxide, aluminum oxide, cubic boron nitride, boron carbide, silicon carbide, silicon nitride, tantalum carbide, titanium carbide, titanium nitride, tungsten carbide, and zirconia alloys containing at least one phase stabilization additive selected from the group yttrium, hafnium, calcium, magnesium, and cesium. Scratch resistant substrates or articles having discrete, hard particles embedded within the surface layer of the substrate or article are also provided. These substrates or articles essentially have the surface wear characteristics of the hard particles or material embedded within the surface layer. Thus, it is possible to prepare plastic materials or articles having significantly improved scratch or surface wear resistance without significantly increasing the weight or external dimensions of the plastic materials or articles.

    摘要翻译: 提供了一种通过在分散的硬质颗粒内嵌入衬底的表面层来改善衬底的划伤或表面耐磨性的方法。 将离散的硬颗粒施加到基材表面,然后通过热或溶剂方法软化基材表面层,然后嵌入基材的表面层中并结合到基材的表面层。 合适的基材包括热塑性塑料,热固性塑料,聚合物,玻璃,软金属和复合材料。 合适的硬颗粒包括金刚石,二氧化硅,氧化铝,立方氮化硼,碳化硼,碳化硅,氮化硅,碳化钽,碳化钛,氮化钛,碳化钨和含有至少一种相稳定添加剂的氧化锆合金, 钇,铪,钙,镁和铯。 还提供了具有嵌入在基材或制品的表面层内的分散的硬颗粒的耐刮擦基材或制品。 这些基材或制品基本上具有嵌入在表面层内的硬质颗粒或材料的表面磨损特性。 因此,可以制备具有显着改善的耐擦伤性或表面耐磨性的塑料材料或制品,而不显着增加塑料材料或制品的重量或外部尺寸。

    Novel susceptor for use in chemical vapor deposition apparatus and its
method of use
    5.
    发明授权
    Novel susceptor for use in chemical vapor deposition apparatus and its method of use 失效
    化学蒸气沉积装置中使用的新颖不动产及其使用方法

    公开(公告)号:US5091208A

    公开(公告)日:1992-02-25

    申请号:US488585

    申请日:1990-03-05

    申请人: Roger W. Pryor

    发明人: Roger W. Pryor

    CPC分类号: C23C16/4586

    摘要: A composite susceptor for forming uniform deposits by chemical vapor deposition. The composite susceptor has an electrically conducted layer of material disposed on a block of material which is adapted to be heated by an induction heating coil. The conductive layer is electrically biased to control the geometry of the gas plasma. By electrically controlling the geometry of the gas plasma, more uniform deposition of a material on a substance is achieved. A composite susceptor having a segmented conductive layer for producing a graded electrical profile and a conductive ring surrounding a gas plasma are also described. In one aspect, a phase-shifting layer of material is disposed on the conductive layer.

    Carbon nitride cold cathode
    7.
    发明授权
    Carbon nitride cold cathode 失效
    碳氮化物冷阴极

    公开(公告)号:US06388366B1

    公开(公告)日:2002-05-14

    申请号:US08438118

    申请日:1995-05-08

    申请人: Roger W. Pryor

    发明人: Roger W. Pryor

    IPC分类号: C01L300

    摘要: A cold cathode is formed of carbon nitride. The cathode may include layers of boron nitride and diamond underlying the carbon nitride. The cathodes are made by reactive laser ablation or by sputtering. Electronic devices utilizing the carbon nitride cathodes are also described.

    摘要翻译: 冷阴极由碳氮化物形成。 阴极可以包括氮化碳层和碳纳米管下面的金刚石层。 阴极由反应激光烧蚀或溅射制成。 还描述了利用碳氮化物阴极的电子器件。

    Boron nitride cold cathode
    8.
    发明授权
    Boron nitride cold cathode 失效
    氮化硼冷阴极

    公开(公告)号:US06069436A

    公开(公告)日:2000-05-30

    申请号:US882637

    申请日:1997-06-25

    申请人: Roger W. Pryor

    发明人: Roger W. Pryor

    摘要: A cold cathode is formed of n-type boron nitride. The cathode may include a layer of diamond underlying the boron nitride. The cathodes are made by laser ablation or by sputtering. Electronic devices utilizing the boron nitride cathodes are also described.

    摘要翻译: 冷阴极由n型氮化硼形成。 阴极可以包括氮化硼下面的金刚石层。 阴极通过激光烧蚀或溅射制成。 还描述了利用氮化硼阴极的电子器件。

    Method of forming cubic boron nitride films
    9.
    发明授权
    Method of forming cubic boron nitride films 失效
    形成立方氮化硼薄膜的方法

    公开(公告)号:US5483920A

    公开(公告)日:1996-01-16

    申请号:US102605

    申请日:1993-08-05

    申请人: Roger W. Pryor

    发明人: Roger W. Pryor

    摘要: A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic boron nitride film by a reactive biased laser ablation technique.

    摘要翻译: 首先通过原子氢处理衬底的表面,然后通过反应偏置激光烧蚀技术沉积立方氮化硼膜,从而在硅衬底上形成大面积单晶立方氮化硼膜的新方法。