公开(公告)号：US5968287A

公开(公告)日：1999-10-19

申请号：US858033

申请日：1997-05-16

申请人： Prem Nath

发明人： Prem Nath

IPC分类号： E04D13/18 ,  H01L31/048

CPC分类号： H01L31/048 ,  H02S20/23 ,  Y02B10/12 ,  Y02B10/22 ,  Y02E10/50

摘要： A photovoltaic building structure comprises a number of interlockable building panels having photovoltaic generator devices supported thereupon. The photovoltaic devices may be attached to the panels by a vacuum lamination process in which a flexible, air impermeable membrane covers a stack of layers being laminated to the panel. Evacuation of air from between the membrane and panel causes the lamination stack to be compressed against the panel, and a pressure and/or heat activatable adhesive is employed to adhere the various layers to the panel. Installation of the panels is in accord with standard building techniques, and the presence of the photovoltaic generators does not change the mechanical characteristics of the panels.

摘要翻译： 光伏建筑结构包括许多可互锁的建筑物面板，其中支撑有光伏发电机装置。 光伏器件可以通过真空层压工艺附着到面板上，其中柔性的不透气膜覆盖层压到面板上的一叠层。 从膜和面板之间排出的空气导致层压叠层压靠面板，并且使用压力和/或热可活化的粘合剂将各种层粘附到面板上。 面板的安装符合标准的建筑技术，光伏发电机的存在不会改变面板的机械特性。

公开(公告)号：US5110370A

公开(公告)日：1992-05-05

申请号：US585661

申请日：1990-09-20

申请人： Craig Vogeli ,  Prem Nath

发明人： Craig Vogeli ,  Prem Nath

IPC分类号： H01L31/042 ,  H01L31/048 ,  H01L31/052

CPC分类号： H01L31/048 ,  H01L31/0543 ,  H01L31/0547 ,  Y02E10/52

摘要： A photovoltaic cell includes a light-directing optical element integrally formed in an encapsulant layer thereof in the region of opaque current-collecting gridlines.The optical element redirects light which would be absorbed by the opaque structure to other regions of the photovoltaic device, thereby decreasing shading effects.

摘要翻译： 光伏电池包括在不透明电流收集网格线的区域中整体地形成在其密封剂层中的导光光学元件。光学元件将将被不透明结构吸收的光重定向到光伏器件的其它区域，从而减少 阴影效果。

公开(公告)号：US4739414A

公开(公告)日：1988-04-19

申请号：US885988

申请日：1986-07-15

申请人： Roger W. Pryor ,  Stephen J. Hudgens ,  Prem Nath ,  Ronald G. Mulberger

发明人： Roger W. Pryor ,  Stephen J. Hudgens ,  Prem Nath ,  Ronald G. Mulberger

IPC分类号： H04N1/031 ,  H04N1/04 ,  H04N1/10 ,  H04N1/19 ,  H04N1/193 ,  H04N1/401

CPC分类号： H04N1/0312 ,  H04N1/0311 ,  H04N1/04 ,  H04N1/1017 ,  H04N1/103 ,  H04N1/1043 ,  H04N1/1048 ,  H04N1/19 ,  H04N1/401 ,  H04N1/193 ,  H04N2201/0438

摘要： Apparatus for producing electronic signals which are representative of a detectable condition on an image-bearing surface. The apparatus includes an elongated array of distinct thin film photosensitive elements formed on a common flexible large area substrate. The elongated array of photosensitive elements are fabricated as a large area, photovoltaic structure formed of a plurality of thin film layers, including a first layer of thin film conductive material. The discrete photosensitive elements are defined by patterning of the conductive layer into shaped regions which determine the overall configuration and dimensions of each element.

摘要翻译： 用于产生代表图像承载表面上可检测状态的电子信号的装置。 该装置包括形成在共同柔性大面积基板上的不同薄膜感光元件的细长阵列。 细长的感光元件阵列被制造为由多个薄膜层形成的大面积的光伏结构，其包括第一层薄膜导电材料。 离散的光敏元件通过将导电层图案化成成形区域来限定，这些区域确定了每个元件的整体结构和尺寸。

公开(公告)号：US4698234A

公开(公告)日：1987-10-06

申请号：US897449

申请日：1986-10-17

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US4637895A

公开(公告)日：1987-01-20

申请号：US718661

申请日：1985-04-01

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi C. Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  C09K11/07

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

摘要翻译： 用于辉光放电的前体气体混合物沉积宽而窄的带隙半导体合金材料，所述材料的特征在于改善的光电导率和稳定性以及改善的抗光降解性。 还具体公开了制造窄带隙半导体的方法，该方法不会受到前体气体混合物的组分的不均匀耗尽的影响。

公开(公告)号：US4633034A

公开(公告)日：1986-12-30

申请号：US699524

申请日：1985-02-08

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/0224 ,  H01L31/076 ,  H01L31/20 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022425 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved photovoltaic device exhibiting increased tolerance of shorting and shunting defects includes a pattern of current flow restricting material operatively disposed so as to limit the flow of electrical current between the substrate and the current collector of the device. Also disclosed are methods for the fabrication of the improved device.

摘要翻译： 显示增加的短路和分流缺陷公差的改进的光伏器件包括可操作地设置以限制基板和器件的集电器之间的电流流动的电流限流材料的图案。 还公开了用于制造改进的装置的方法。

公开(公告)号：US4624862A

公开(公告)日：1986-11-25

申请号：US668435

申请日：1984-11-05

申请人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

发明人： Chi C. Yang ,  Ralph Mohr ,  Stephen Hudgens ,  Annette Johncock ,  Prem Nath

IPC分类号： C23C16/30 ,  C23C14/14 ,  C23C16/50 ,  G03G5/082 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  B05D5/12

CPC分类号： H01L31/206 ,  G03G5/08264 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

公开(公告)号：US4605565A

公开(公告)日：1986-08-12

申请号：US448139

申请日：1982-12-09

申请人： Prem Nath

发明人： Prem Nath

IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/32 ,  C23C14/44 ,  C23C16/50 ,  H01B5/14 ,  H01B13/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L31/04 ,  H01L31/18 ,  H01L31/20 ,  B05D3/06

CPC分类号： H01L31/1884 ,  C23C14/086 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of and apparatus for depositing metallic oxide coatings that are highly electrically transmissive and highly electrically conductive onto a substrate. An r.f. signal is employed to develop an ionized plasma of metal and oxygen atoms, the plasma being adapted for deposition onto a large area substrate which preferably includes semiconductor layers thereon. The method and apparatus are particularly adapted for the improved deposition of transmissive and conductive coatings which include low melting point metals onto the surface of plastic, glass or metallic substrates. The deposition may be accomplished in either a continuous or batch process mode.

摘要翻译： 一种用于沉积金属氧化物涂层的方法和装置，其在基底上具有高电透过性和高导电性。 一个r.f. 信号用于开发金属和氧原子的离子化等离子体，等离子体适于沉积到大面积的衬底上，其中优选地包括半导体层。 该方法和装置特别适用于将包含低熔点金属的透射和导电涂层改进沉积到塑料，玻璃或金属基材的表面上。 沉积可以以连续或间歇工艺模式实现。

公开(公告)号：US4590327A

公开(公告)日：1986-05-20

申请号：US653801

申请日：1984-09-24

申请人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

发明人： Prem Nath ,  Timothy J. Barnard ,  Dominic Crea

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/076 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022433 ,  Y02E10/548

摘要： Disclosed is an improved photovoltaic device design and method. The design is especially useful for large area photovoltaic devices and includes a first electrode, a semiconductor body over the first electrode, a transparent electrically conductive layer over the semiconductor body and a bus grid structure in electrical contact with the conductor layer for collecting and carrying current generated by the photovoltaic device. Structure is provided for reducing the degrading effect of a low resistance current path or short in the semiconductor body.The structure for reducing the degrading effect of a low resistance current path can be a specifically designed transparent electrically conductive layer, electrical isolation of the current carrying portions of the bus grid structure from the conductive layer, resistive connections of the current collecting fingers to the remainder of the bus grid structure, a buffered bus grid structure or a fuse-type connection or the grid or current collecting fingers which terminates when the current reaches a predetermined amount.Methods of fabricating photovoltaic devices as disclosed herein are provided.

摘要翻译： 公开了一种改进的光伏器件设计和方法。 该设计对于大面积光伏器件特别有用，并且包括第一电极，在第一电极上方的半导体本体，半导体主体上方的透明导电层和与导体层电接触的用于收集和承载电流的总线栅格结构 由光伏器件产生。 提供了用于降低半导体本体中低电阻电流路径或短路的劣化效应的结构。 用于降低低电阻电流路径的降级效果的结构可以是专门设计的透明导电层，总线栅格结构的载流部分与导电层的电隔离，电流收集指状物与其余部分的电阻连接 总线网格结构，缓冲总线网格结构或熔丝式连接，或电流或集电指状物，当电流达到预定量时终止。 提供制造本文公开的光伏器件的方法。

公开(公告)号：US4537795A

公开(公告)日：1985-08-27

申请号：US637358

申请日：1984-08-03

申请人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

发明人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

IPC分类号： C23C16/54 ,  F16J15/40 ,  H01J37/32 ,  H01L21/365

CPC分类号： H01J37/3244 ,  C23C16/545 ,  F16J15/40

摘要： A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.

摘要翻译： 一种用于引入吹扫气体通过适于与辉光放电沉积设备一起使用的挡板系统的方法，其中连续的非晶半导体层沉积在衬底上。 沉积设备包括至少一对相邻的专用沉积室，每个室中引入不同的工艺气体，这些室通过气门可操作地连接。 惰性气体被扫过气门，以最小化来自腔室的工艺气体的反向扩散。 挡板系统适用于防止所述吹扫气体在行进通过气体闸道通道时进入湍流。 此外，引入每单位时间吹扫气体的足够体积以确保一些吹扫气体流入第一室的阴极区域，从而基本上防止工艺气体和等离子体从阴极区域逸出并形成硅烷粉末。