公开(公告)号：US07520246B2

公开(公告)日：2009-04-21

申请号：US11240358

申请日：2005-10-03

申请人： Ryuichi Matsuda ,  Noriaki Ueda ,  Kazuto Yoshida

发明人： Ryuichi Matsuda ,  Noriaki Ueda ,  Kazuto Yoshida

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01Q1/366 ,  H01Q7/00

摘要： A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

公开(公告)号：US20080115728A1

公开(公告)日：2008-05-22

申请号：US11660862

申请日：2006-02-22

申请人： Ryuichi Matsuda ,  Masahiko Inoue

发明人： Ryuichi Matsuda ,  Masahiko Inoue

IPC分类号： C23C16/22

CPC分类号： H01L22/20 ,  H01J37/32009 ,  H01J37/32568 ,  H01J37/32935

摘要： When the size of a substrate 1 is instructed, a map of uniform sputter-etching possible region based on the relationship between the diameter-size Dp of a high-density plasma region and the height H from the center of the high-density plasma region to the bottom of a plasma diffusion region is read out; on the basis of the internal pressure and the frequency of electromagnetic waves from an antenna 116, the value of the height Hp from the center of the high-density plasma region to the upper surface inside a vacuum chamber 111, and the value of the Dp are obtained; on the basis of the internal pressure and the magnitude of the self-bias potential of the substrate 1, the height Hs between the bottom of the plasma diffusion region and the top surface of a supporting table 113 is obtained; on the basis of the above-mentioned values of Dp, Hp and Hs, the value of the H in the uniform sputter-etching possible region is obtained from the map; and a lifting-and-lowering device 121 is controlled so that H can have the above-mentioned value.

摘要翻译： 当指示基板1的尺寸时，基于高密度等离子体区域的直径尺寸Dp与来自高密度等离子体区域的中心的高度H之间的关系的均匀溅射蚀刻可能区域的图 读出等离子体扩散区域的底部; 基于来自天线116的电磁波的内部压力和频率，从高密度等离子体区域的中心到真空室111内的上表面的高度Hp的值，以及Dp 获得; 基于衬底1的内部压力和自偏置电位的大小，获得等离子体扩散区域的底部和支撑台113的顶面之间的高度Hs; 基于上述Dp，Hp和Hs的值，从图中获得均匀溅射蚀刻可能区域中的H的值; 并且控制升降装置121使得H可以具有上述值。

公开(公告)号：US20050174135A1

公开(公告)日：2005-08-11

申请号：US10513396

申请日：2003-06-17

申请人： Ryuichi Matsuda ,  Yuichi Kawano ,  Masahiko Inoue

发明人： Ryuichi Matsuda ,  Yuichi Kawano ,  Masahiko Inoue

IPC分类号： H01L21/00 ,  H01L21/683 ,  G01R31/02

CPC分类号： H01L21/67253 ,  H01L21/67248 ,  H01L21/6831

摘要： The present invention attracts a wafer 6, placed on a susceptor 5, toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7, varies the output voltage of a variable direct current power source 23 for the electrostatic chuck electrode 7 while measuring the temperature of the wafer 6 by a temperature detection sensor 21; and detects the potential of the wafer 6 based on the output voltage of the variable direct current power source 23 at a time when the temperature of the wafer 6 peaks.

摘要翻译： 本发明通过静电卡盘电极7的静电吸引力吸引放置在基座5上的晶片6，从而使静电卡盘电极7的可变直流电源23的输出电压变化，同时测量 温度检测传感器21的晶片6的温度; 并且在晶片6的温度高峰时基于可变直流电源23的输出电压来检测晶片6的电位。

公开(公告)号：US08480912B2

公开(公告)日：2013-07-09

申请号：US12065373

申请日：2007-02-15

申请人： Ryuichi Matsuda ,  Masahiko Inoue ,  Kazuto Yoshida ,  Tadashi Shimazu

发明人： Ryuichi Matsuda ,  Masahiko Inoue ,  Kazuto Yoshida ,  Tadashi Shimazu

IPC分类号： B44C1/22 ,  B05C11/00 ,  C23F1/08 ,  B01J19/08

CPC分类号： H01J37/32743 ,  H01J37/3244

摘要： Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).

公开(公告)号：US20110297321A1

公开(公告)日：2011-12-08

申请号：US13145939

申请日：2009-10-15

申请人： Ryuichi Matsuda ,  Akihiko Matsukura ,  Kenjiro Uemitsu ,  Hisashi Yanagida

发明人： Ryuichi Matsuda ,  Akihiko Matsukura ,  Kenjiro Uemitsu ,  Hisashi Yanagida

IPC分类号： H01L21/3065 ,  C23C16/50

CPC分类号： H01L21/6831 ,  C23C16/4586 ,  H01L21/67069

摘要： An object is to provide a substrate support stage of a plasma processing apparatus, in which electrical discharge from a connection terminal is prevented with a simple structure. In the substrate support stage of a plasma processing apparatus, an electrostatic attraction plate (13) configured to electrostatically attract a substrate (W) and to apply a bias to the substrate (W) is provided on an upper surface of a support stage (10) in a vacuum chamber, a sealing member (12) is provided on the upper surface of the support stage (10), an outer periphery side of the sealing member (12) is hermetically sealed as the vacuum chamber, and a connection terminal (17) commonly used for electrostatic attraction voltage supply and bias power supply is disposed on an atmosphere side which is an inner periphery side of the sealing member (12).

摘要翻译： 本发明的目的是提供一种等离子体处理装置的基板支撑台，其中以简单的结构防止了来自连接端子的放电。 在等离子体处理装置的基板支撑台中，在支撑台（10）的上表面上设置静电吸引板（13），静电吸引板（13）被配置为静电吸引基板（W）并向基板（W）施加偏压 ），在支撑台（10）的上表面设置有密封构件（12），密封构件（12）的外周侧与真空室密封，连接端子 通常用于静电吸引电压供给和偏压电源的电路17设置在作为密封构件（12）的内周侧的气氛侧。

公开(公告)号：US20050202183A1

公开(公告)日：2005-09-15

申请号：US10514017

申请日：2003-06-17

申请人： Ryuichi Matsuda ,  Tadashi Shimazu ,  Masahiko Inoue

发明人： Ryuichi Matsuda ,  Tadashi Shimazu ,  Masahiko Inoue

IPC分类号： C23C16/507 ,  B01J19/08 ,  H01J37/32 ,  H01L21/205 ,  H05H1/46 ,  C03C15/00 ,  C23F1/00 ,  H05H1/24

CPC分类号： H01J37/321 ,  C23C16/507

摘要： A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.

摘要翻译： 公开了一种等离子体成膜装置（等离子体处理装置），其包括设置在天线11a周围并位于天花板表面外侧的第二天线11b，并且向第二天线11b提供沿着方向 与通过电源装置供给到天线11a的电流的方向相反，由此在与磁力线F 1相反的方向上的磁力线F 2出现在 天线11a在第二天线11b的位置产生。 因此，即使在管状容器2内的宽范围内产生均匀的等离子体，壁面方向的磁通密度降低。

公开(公告)号：US4985401A

公开(公告)日：1991-01-15

申请号：US315162

申请日：1989-02-24

申请人： Akira Sawaoka ,  Ryuichi Matsuda ,  Tadashi Kondo

发明人： Akira Sawaoka ,  Ryuichi Matsuda ,  Tadashi Kondo

IPC分类号： C01B13/32 ,  C01G1/00 ,  C01G3/00 ,  C23C4/12 ,  C23C4/18 ,  H01B13/00 ,  H01L39/24

CPC分类号： H01L39/2445 ,  Y10S505/805 ,  Y10S505/809 ,  Y10S505/815 ,  Y10S505/823

摘要： A superconductor is produced by electric discharge explosion flame spraying of a composite body of constituents of an immiscible alloy. The electrically discharged composite body is deposited on a substrate and the resultant alloy is oxidized to yield an oxide of the alloy having superconductive property. This process can be applied to the Ln-Ba-Cu system (Ln is at least one of the rare earth elements including Y), typically the Y.sub.1 Ba.sub.2 Cu.sub.3 - or Y.sub.2 Ba.sub.4 Cu.sub.8 system, or other immiscible alloy systems such as the Bi-(Ca, Sr)-Cu system to form an oxide thereof.

摘要翻译： 超导体是通过不混溶合金的组分的复合体的放电爆炸火焰喷涂产生的。 将电放电复合体沉积在基底上，并将所得的合金氧化，得到具有超导性的合金的氧化物。 该方法可以应用于Ln-Ba-Cu系统（Ln是包括Y的稀土元素中的至少一种），通常为Y1Ba2Cu3-或Y2Ba4Cu8体系，或其他不混溶的合金体系，例如Bi-（Ca，Sr ）-Cu系统以形成其氧化物。

公开(公告)号：US08662010B2

公开(公告)日：2014-03-04

申请号：US11797601

申请日：2007-05-04

申请人： Ryuichi Matsuda ,  Tadashi Shimazu ,  Masahiko Inoue

发明人： Ryuichi Matsuda ,  Tadashi Shimazu ,  Masahiko Inoue

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  C23C16/507

摘要： A plasma film deposition apparatus (plasma processing apparatus) includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface. The second antenna 11b is supplied with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by a power supply. Lines of magnetic force F2, heading in a direction opposite to the direction of lines of magnetic force F1 appearing at the site of the antenna 11a, are thereby generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated over a wide range within a tubular container 2.

摘要翻译： 等离子体成膜装置（等离子体处理装置）包括设置在天线11a周围并位于天花板表面外侧的第二天线11b。 向第二天线11b供给通过电源向与天线11a供给的电流的方向相反的方向流动的电流。 因此，在第二天线11b的位置处产生与在天线11a的位置出现的磁力F1的线的方向相反的方向的磁力F2的线。 因此，即使在管状容器2内的宽范围内产生均匀的等离子体，壁面方向的磁通密度降低。

公开(公告)号：US20130088146A1

公开(公告)日：2013-04-11

申请号：US13695566

申请日：2011-06-13

申请人： Ryuichi Matsuda ,  Seiji Nishikawa

发明人： Ryuichi Matsuda ,  Seiji Nishikawa

IPC分类号： H05H1/00

CPC分类号： H05H1/00 ,  H01J37/321 ,  H01J37/32183 ,  H05H1/46 ,  H05H2001/4667

摘要： Provided is an inductively coupled plasma generation device capable of having both a wide matching range and reduced loss. An inductively coupled plasma generation device in which high harmonic waves from a high harmonic wave power source (11) are supplied to an antenna (14) by way of a matching device (12) which matches impedance, and plasma is generated in a vacuum vessel by electromagnetic waves from the antenna (14), wherein an L-type matching circuit is used as the matching device (12) and a capacitor (C3) is provided parallel to the antenna (14) at a position closer to the antenna (14) than capacitors (C1, C2) in the L-type matching circuit.

摘要翻译： 提供了一种电感耦合等离子体产生装置，其能够具有宽的匹配范围和减小的损耗。 一种电感耦合等离子体产生装置，其中来自高次谐波电源（11）的高次谐波通过与阻抗匹配的匹配装置（12）提供给天线（14），并且在真空容器中产生等离子体 通过来自天线（14）的电磁波，其中使用L型匹配电路作为匹配装置（12），并且在靠近天线（14）的位置处平行于天线（14）提供电容器（C3） ）比L型匹配电路中的电容器（C1，C2）。

公开(公告)号：US20120132619A1

公开(公告)日：2012-05-31

申请号：US13376061

申请日：2010-05-24

申请人： Ryuichi Matsuda ,  Kazuto Yoshida

发明人： Ryuichi Matsuda ,  Kazuto Yoshida

IPC分类号： C23C16/455 ,  B05C11/00 ,  B44C1/22 ,  C23C16/50

CPC分类号： C23C16/4412

摘要： A gas discharge structure, and a device and a method for plasma processing which are capable of a uniform gas discharge and have improved maintainability. A pendulum gate valve (15) is eccentrically mounted to a vacuum chamber (11) in such a manner that the center (Mc) of the area of an opening region (M) corresponding to the center value of the recommended value for the use of the opening ratio of the pendulum gate valve (15) coincides with the axis center (Cc) of the vacuum chamber (11).

摘要翻译： 一种气体放电结构，以及能够均匀排气并具有改进的可维护性的等离子体处理的装置和方法。 摆闸阀（15）偏心地安装在真空室（11）上，使得开口区域（M）的区域的中心（Mc）对应于推荐值的中心值，以便使用 摆闸阀（15）的开度比与真空室（11）的轴心（Cc）重合。