-
1.发明授权Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method 失效等离子体处理装置，等离子体处理方法，等离子体成膜装置和等离子体膜沉积方法公开(公告)号：US08662010B2
公开(公告)日：2014-03-04
申请号：US11797601
申请日：2007-05-04
申请人： Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
发明人： Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma film deposition apparatus (plasma processing apparatus) includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface. The second antenna 11b is supplied with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by a power supply. Lines of magnetic force F2, heading in a direction opposite to the direction of lines of magnetic force F1 appearing at the site of the antenna 11a, are thereby generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated over a wide range within a tubular container 2.
摘要翻译： 等离子体成膜装置（等离子体处理装置）包括设置在天线11a周围并位于天花板表面外侧的第二天线11b。 向第二天线11b供给通过电源向与天线11a供给的电流的方向相反的方向流动的电流。 因此，在第二天线11b的位置处产生与在天线11a的位置出现的磁力F1的线的方向相反的方向的磁力F2的线。 因此，即使在管状容器2内的宽范围内产生均匀的等离子体，壁面方向的磁通密度降低。
-
公开(公告)号：US08480912B2
公开(公告)日：2013-07-09
申请号：US12065373
申请日：2007-02-15
CPC分类号： H01J37/32743 , H01J37/3244
摘要： Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
-
3.发明申请Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method 审中-公开等离子体处理系统，等离子体处理方法，等离子体膜沉积系统和等离子体膜沉积方法公开(公告)号：US20050202183A1
公开(公告)日：2005-09-15
申请号：US10514017
申请日：2003-06-17
申请人： Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
发明人： Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
IPC分类号： C23C16/507 , B01J19/08 , H01J37/32 , H01L21/205 , H05H1/46 , C03C15/00 , C23F1/00 , H05H1/24
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.
摘要翻译： 公开了一种等离子体成膜装置（等离子体处理装置），其包括设置在天线11a周围并位于天花板表面外侧的第二天线11b，并且向第二天线11b提供沿着方向 与通过电源装置供给到天线11a的电流的方向相反，由此在与磁力线F 1相反的方向上的磁力线F 2出现在 天线11a在第二天线11b的位置产生。 因此，即使在管状容器2内的宽范围内产生均匀的等离子体，壁面方向的磁通密度降低。
-
公开(公告)号：US20090127227A1
公开(公告)日：2009-05-21
申请号：US12065373
申请日：2007-02-15
CPC分类号： H01J37/32743 , H01J37/3244
摘要： Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).
摘要翻译： 提供了一种等离子体处理装置和等离子体处理方法，通过该处理方法在处理期间降低了等离子体损伤。 在对基板（5）进行期望的等离子体处理时，向处理室（2）供给用于进出基板（5）的惰性气体，将处理室（2）中的压力波动调整为 处于规定范围内，并且产生在处理室（2）中供应的惰性气体的等离子体（20）。 通过将等离子体功率控制在规定范围内，使衬底（5）的传送区域中的等离子体（20）的密度降低，并且将衬底（5）从支撑台（4） ）。
-
5.发明申请Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method 失效等离子体处理装置，等离子体处理方法，等离子体成膜装置和等离子体膜沉积方法公开(公告)号：US20070224364A1
公开(公告)日：2007-09-27
申请号：US11797601
申请日：2007-05-04
申请人： Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
发明人： Ryuichi Matsuda , Tadashi Shimazu , Masahiko Inoue
CPC分类号： H01J37/321 , C23C16/507
摘要： A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.
摘要翻译： 公开了一种等离子体成膜装置（等离子体处理装置），其包括设置在天线11a周围并位于天花板表面外侧的第二天线11b，并且向第二天线11b提供沿着方向 与通过电源装置供给到天线11a的电流的方向相反，由此在与磁力线F 1相反的方向上的磁力线F 2出现在 天线11a在第二天线11b的位置产生。 因此，即使在管状容器2内的宽范围内产生均匀的等离子体，壁面方向的磁通密度降低。
-
公开(公告)号：US20100236482A1
公开(公告)日：2010-09-23
申请号：US12681090
申请日：2008-10-14
IPC分类号： C23C16/34
CPC分类号： H01L21/68735 , C23C16/4585 , C23C16/50 , H01L21/0217 , H01L21/02274 , H01L21/318 , H01L21/3185
摘要： An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).
摘要翻译： 目的是提供即使在通过向基板施加偏压而形成膜的情况下也能够还原粒子的等离子体成膜装置。 在等离子体成膜装置中，其中偏置被施加到放置在腔室中的支撑台（4）上的衬底（5）上并且通过使用等离子体在衬底（5）上形成薄膜，支撑台（4） 具有与基板（5）接触的接触面的柱状支撑台主体（4b），所述接触面（4a）的外径（c）小于所述基板（5）的外径（W） ; 以及从所述支撑台主体（4b）的侧面（4d）向外周方向延伸的凸缘部（4c）。 其特征在于，在所述凸缘部（4c）与所述基板（5）的外周的后表面之间形成规定的第一间隙（G1）。
-
公开(公告)号：US07314525B2
公开(公告)日：2008-01-01
申请号：US10201020
申请日：2002-07-24
申请人： Tadashi Shimazu , Masahiko Inoue
发明人： Tadashi Shimazu , Masahiko Inoue
CPC分类号： C23C16/45523 , C23C16/402 , C23C16/517 , H01J37/32082 , H01J37/32706
摘要： A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiH4 gas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiH4 gas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.
摘要翻译： 等离子体CVD装置包括用于在要执行的半导体晶片上形成薄膜的反应的反应容器，向半导体晶片施加用于溅射的高频偏压的偏置电极，提供SiH 4的喷嘴 至少包括氢的气体进入反应容器，以及控制电路，其通过开关对高频偏置进行开/关控制，并且控制电源的通过开/关控制SiH 4 气体通过流量控制器基于与高频偏置控制逻辑相反的控制逻辑。
-
公开(公告)号：US07972946B2
公开(公告)日：2011-07-05
申请号：US12373146
申请日：2007-07-24
IPC分类号： H01L21/425 , H01L21/31 , H01L21/469 , H01L21/00 , H05H1/24 , H05H1/02 , H05H1/10
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.
摘要翻译： 提供能够形成具有高压缩应力的氮化硅膜的等离子体处理方法和等离子体处理装置。 在通过使用含有硅和氢气和氮气的原料气体的等离子体将氮化硅膜沉积在工艺目标衬底上的等离子体处理方法中，用于断开代表氢的键合状态的氮 - 氢键的离子能 将原料气体和氮气施加到处理对象基板，以减少氮化硅膜中所含的氮 - 氢键的量。
-
公开(公告)号：US20090176380A1
公开(公告)日：2009-07-09
申请号：US12373146
申请日：2007-07-24
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.
摘要翻译： 提供能够形成具有高压缩应力的氮化硅膜的等离子体处理方法和等离子体处理装置。 在通过使用含有硅和氢气和氮气的原料气体的等离子体将氮化硅膜沉积在工艺目标衬底上的等离子体处理方法中，用于断开代表氢的键合状态的氮 - 氢键的离子能 将原料气体和氮气施加到处理对象基板，以减少氮化硅膜中所含的氮 - 氢键的量。
-
公开(公告)号：US20100310791A1
公开(公告)日：2010-12-09
申请号：US12812653
申请日：2009-01-20
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/505 , H01J37/321 , H01J37/32706 , H01L21/02274 , H01L21/3185
摘要： In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.
摘要翻译： 为了提供等离子体处理方法和能够嵌入SiN膜的等离子体处理系统，可以通过施加偏压功率来进行，在等离子体处理方法中，用于在作为目标的基板21上沉积氮化硅膜的等离子体处理方法 等离子体处理，通过使用含有硅和氢的原料气体和含氮气体的等离子体，将离子注入基板21的偏压功率设定为等于或高于阈值以增加Si-H键合量， 从而降低压缩应力。
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.017 秒)
