摘要:
A resin material layer including photosensitive resin material is formed on an interlayer on an underlayer. By partially exposing and developing the resin material layer using developer in which the resin material layer and the interlayer are soluble, an uncured portion of the resin material layer is removed to form an opening penetrating to the interlayer, and the developer infiltrates into the interlayer via the opening to remove at least surfaces of first and second portions of the interlayer. The first portion corresponds to the opening. The second portion surrounds the first portion. Each bank is formed by heating a remaining portion of the resin material layer to soften an overhanging portion above a space formed by the surface of the second portion being removed, so that the overhanging portion flows downward to fill the space, cover an exposed portion of the interlayer, and contact the underlayer or the interlayer.
摘要:
A light emitter and a method of manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by a bank that has at least one liquid-repellent surface. The charge injection transport layer is principally composed of a metal compound that is more liquid-philic than the surface of the bank. The charge injection transport layer includes a recessed structure so that in a region defined by the bank, the charge injection transport layer is lower than a bottom surface of the bank.
摘要:
An organic information reading sensor comprising a plurality of light receiving sections for interposing at least one kind of organic material between electrodes and converting a light signal into an electric signal, wherein a non-translucent insulator is provided between the light receiving sections.
摘要:
An organic thin-film electroluminescent display device comprising a substrate, hole injection electrodes, an organic thin film layer, electron injection electrodes, an electrode-driving IC for driving the electron injection electrodes and the electron injection electrodes and lead wires for connecting the hole injection electrodes and the electron injection electrodes to the electrode-driving IC. The lead wires each include a lead underlayer made of the same material of the hole injection electrode and a lead electroconductive layer formed on the lead underlayer and having a higher electroconductivity than that of the lead underlayer and or the electron injection electrodes each may include an underlayer for the electron injection electrode and an electroconductive layer for the electron injection electrode formed on the underlayer for the electron injection electrode and having a higher electroconductivity than that of the underlayer for the electron. The device injection electrode can prevent fluctuations in luminescence brightness due to different ohmic losses of lead wires connecting the hole injection electrodes and the electron injection electrodes to the electrode-driving IC and due to different electric resistances of electron injection electrodes.
摘要:
A semiconductor memory device comprises eight memory arrays arranged in one column. A peripheral circuit is arranged in the central portion of the eight memory arrays, two column decoders being arranged with the peripheral circuit interposed therebetween. Each of the eight memory arrays is provided with a row decoder. A plurality of first column selecting lines are provided so as to cross the three memory arrays arranged on one side of the peripheral circuit from the column decoder. In addition, a plurality of second column selecting lines are provided so as to intersect with the three memory arrays arranged on the other side of the peripheral circuit from the column decoder.
摘要:
An input signal is inverted by a CMOS inverter and provided for an output signal line. The CMOS inverter is provided between a power supply and a ground, and its node on the side of the power supply is charged all the time to prevent the potential thereof from being lowered. An output signal provided for the output signal line is delayed by a delay circuit to be applied to a boosting capacitor. The potential of the node is further boosted by this boosting capacitor. Consequently, the potential of the output signal is also boosted. When the potential of the node is raised higher than a supply voltage, an N channel MOSFET for charging is turned off to prevent a reverse flow of a charge.
摘要:
An image sensor comprises, a substrate, a plurality of photoelectric converters mounted on the substrate, for each of which a photoelectric conversion layer is formed of an organic compound layer and is sandwiched between an anode and a cathode so as to perform photoelectric conversion based on incident light, drive circuits for detecting output provided by a signal current generated by the photoelectric converters and for reading signal charges, and a wiring for electrically connecting the photoelectric converters and the drive circuits, wherein, for the plurality of the photoelectric converters that form one read pixels, the size of a photoelectric conversion area differs in accordance with a sensitivity of each of the plurality of photoelectric converters.
摘要:
The organic photoelectric conversion element in accordance with the invention comprises at least one pair of electrodes 12 and 16, a photoelectric conversion region (layer) 15 arranged between the electrodes and containing at least an electron donating organic material and an electron accepting organic material, and a buffer layer 14 containing at least one inorganic matter and inserted between the photoelectric conversion region and at least one electrode of the above-cited pair of electrodes.
摘要:
A dynamic type semiconductor memory device includes m memory blocks each having a plurality of memory cells, and a plurality of sense amplifier groups associated with the respective memory blocks. Each sense amplifier group senses and amplifies data of a selected memory cell in the related memory block. The memory device further includes a circuit for generating a refresh instruction detecting signal in response to an externally applied refresh mode indicating signal, and circuitry responsive to a block designating signal and the refresh instruction detecting signal for activating each of the sense amplifier groups in such a manner that only start timings for the sensing operations of the sense amplifier groups related to the designated memory blocks may differ from each other. This activation circuitry activates the respective sense amplifier groups related to the memory blocks designated by the block designating signal in such a manner that their sensing operations may have the same start timing in the normal mode. This device significantly reduces current dissipation in the refresh mode, while the access time in the normal mode is not adversely affected. This device is suitable for use as an internal memory of a battery back-up type computer because of its small load on the battery.
摘要:
In a dynamic random access memory (DRAM), there is provided a refresh decision circuit which detects the external designation of a self refresh mode, in addition to a CAS before RAS refresh mode, by RAS and CAS signals. By detecting a time period of one cycle of the RAS, the self refresh mode is determined. As a result, the timing of change of the RAS signal is less restricted.